PVD법으로 제조한 박막 태양전지용 CuGaS_2 박막의 특성

정운조,안호근,박계춘 한국환경기술학회 2011 한국환경기술학회지 Vol.12 No.1

본 연구에서는 Cu, Ga, S을 순차적으로 증착하여 Sulfurization하는 방법과 Cu, Ga만 순차적으로 증착하고 Sulfurization하는 방법의 두 가지를 사용하여 CuGaS_2 박막을 제조하였고, XRD, SEM, Spectroscopy로서 그 구조적, 전기적 및 광학적 특성을 조사하였다. Cu는 비교적 융점이 높고 유리 기판에의 부착력을 향상시킬 목적으로 sputtering법으로 증착할 수도 있으나 동일한 챔버 내에서 작업을 할 목적으로 Thermal Evaporation법을 사용하였다. 기판온도가 150℃, 열처리 온도는 300℃와 열처리 시간 1 시간에서 n-type의 CuGaS_2박막을 화학양론적 조성비에 가까울 때 구현할 수 있었고, 이때 박막의 캐리어 농도, 홀 이동도 및 저항률은 각각 7.7816×10^(17)[cm^(-3)], 28.25185 [cm^2/V․s] 및 2.7924×10^(-1) [Ω·cm] 이었다. In this study, CuGaS_2 thin films were fabricated by two methods. First method is the sulfurization after the sequential deposition of Cu, Ga and S while second method is the sulfurization after the sequential deposition of Cu and Ga only. The structural, electrical and optical properties of these films are measured by XRD, SEM and Spectroscopy. The deposition of Cu is used by thermal evaporation method because of the same chamber process. We did not use sputtering method because of the different chamber process, regardless of their high adhesion force. The stoichiometric n-type CuGaS_2 thin films are realized by 150℃ substrate temperature, 300℃ heat-treatment temperature (1 hour). And then carrier concentration, hall mobility, resistivity of these films are 7.7816×10^(17)[cm^(-3)], 28.25185 [cm^2/V․s] and 2.7924×10^(-1) [Ω․cm], respectively.

알루미나 기판상에 형성된 타이타늄 박막의 특성연구

정운조,박계춘,정해덕 국립7개대학공동논문집간행위원회 2002 공업기술연구 Vol.2 No.-

Ti films were deposited onto 100×100 ㎜ alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T.∼400 ℃, annealing temperature of 100∼400 ℃ and sputtering gas pressure of 1.3∼3.0×10^-2 Torr. And the film were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ∼200 ℃, target-substrate distance of ∼14 ㎝ and sputtering pressure of 1.3∼1.7×10^-2 Torr. Also at that condition the most excellent adhesion was observed.

R . F . magnetron sputtering 법으로 제작한 ITO 박막의 특성

정운조,박계춘,유용택 한국센서학회 1995 센서학회지 Vol.4 No.2

Indium Tin Oxide (ITO) thin films have been fabricated by the rf magnetron sputtering technique with a target of a mixture In₂O₃ (90mol%) and SnO₂ (10mol%). We prepared ITO thin films with substrate temperature 100, 300, 400, 500℃ and post-annealing temperature 300, 400, 500℃. And w e analyzed X-ray diffraction patterns, electrical properties, transmission spectra and SEM photographs. As a result, the crystallinity, electrical conductivity and transmittance of ITO thin films were improved with increasing substrate temperature. I3ut, as increasing post-annealing temperature in air. conductivity of the film was decreased. When the ITO thin film was fabricated with substrate temperature of 500℃ and thickness of 3,000 Å, its resistivity and transmittance were about 2×10^(-4)Ωcm and 55% or more, respectively.

X-cut LiNbO_3 광도파로 제작 및 패턴 특성

정운조,김성,박계춘 국립7개대학공동논문집간행위원회 2001 공업기술연구 Vol.1 No.-

The optical near field patterns, propagation loss and mode sizes of x-cut Ti:LiNbO_3 optical waveguide which was fabricated by Ti-diffusion varying with Ti strip thickness in wet oxygen atmosphere were investigated and tested at optical wavelength 1550㎚. As Ti thickness increased from 760A˚, the insertion loss of waveguide was decreased. But at Ti thickness 1500A˚, mode sizes are widely broadened. The Ti thickness of below 1100A˚ and above 1500A˚ showed negative effects to propagation loss and fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling was inferred to be between 1100A˚-1500A˚ in our conditions. And for Ti thickness 1150A˚, its propagation loss, horizontal/vertical mode sizes were measured 1.61㏈/㎝, 11.9/8.9㎛ for TM, 0.22㏈/㎝, 12.0/9.1㎛ for TE respectively.

Al₂O₃ 기판에 형성된 Titanium 박막의 전기적 및 구조적 특성

정운조,양현훈,임정명,김영준,박계춘 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.9

Ti films were deposited onto 100${\times}$100 mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T~400 $^{\circ}C$, annealing temperature of 100~400 $^{\circ}C$, and sputtering gas pressure of 4${\times}$10$^{-3}$ Torr~4${\times}$10$^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties was obtained by substrate temperature of ~200 $^{\circ}C$, target-substrate distance of ~14 cm and sputtering pressure of ~1${\times}$10$^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

Properties of CuInS2 Thin Films Fabricated by Electric Beam Evaporation Method for Thin Film Solar Cell

정운조,안호근,박계춘 한국환경기술학회 2010 한국환경기술학회지 Vol.11 No.4

Ternary chalcopyrite CuInS2 thin film materials very promising for photovoltaic power generation because of its excellent optical and semiconductor properties. In this paper, CuInS2 thin films were performed from S/In/Cu/SLG stacked elemental layer(SEL) method with post annealing treatment. Single phase CuInS2 thin films were prepared with chalcopyrite structure had the highest peak (112) at diffraction angel (2θ) of 27.7° and the second peak (220) at diffraction angle (2θ) of 46.25°. And this films were well fabricated at substrate temperature of 70℃, annealing temperature of 250℃ and annealing time of 60 min.

Al이 첨가된 Zinc Oxide박막의 투명전도막으로서의 응용

정운조,정용근,유용택 한국전기전자재료학회 1995 電氣電子材料學會誌 Vol.8 No.6

We fabricated Zinc Oxide transparent conductive thin films with 2wt% of A1203 doping using rf magnetron sputtering. And we investigated electrical and optical characteristics of them which were made with conditions ; rf power 60-300W, thickness of film 3000 11000.angs.. Resistivity, carrier concentration and Hall mobility were investigated for electrical characteristics. Transmittance and optical band gap were investigated with Spectrophotometer in the wavelength range between 200-900 nm. As a result, ZnO thin film fabricated with rf power of 180W and thickness of 5000.angs. showed the best properties. At the best condition, the sample has resistivity of 1*10$\^$-4/.ohm.cm and transmittance of 95% in the visible range.

DC 마그네트론 스퍼터링법으로 제조된 Tio₂ 박막의 산소분압비에 따른 광분해 특성에 관한 연구

정운조,박중윤,박계춘,Jeong, W.J.,Park, J.Y.,Park, G.C. 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.3

This paper describes the photocatalytic degradation properties by oxygen partial pressure for TiO$_2$ thin films fabricated by dc magnetron reactive sputtering. And the structural, chemical, optical and photocatalytic properties were investigated at various analysis system. When TiO$_2$ thin film was made at deposition time of 120 min and Ar:O$_2$ ratio of 60:40, the best properties were obtained. That results were as follows: thickness; 360∼370 nm, gram size; 40 nm, optical energy band gap; 3.4 eV and Benzene conversion in the photocatalytic degradation; 11 %.

X-cut LiNbO_3 광도파로 제작 및 패턴 특성

정운조,김성,박계춘 木浦大學校 應用科學硏究院 2001 應用科學硏究誌 Vol.1 No.-

The optical near field patterns, propagation loss and mode sizes of x-cut Ti:LiNbO_3 optical waveguide which was fabricated by Ti-diffusion varying with Ti strip thickness in wet oxygen atmosphere were investigated and tested at optical wavelength 1550nm. As Ti thickness increased from 760Å, the insertion loss of waveguide was decreased. But at Ti thickness 1500Å, mode sizes are widely broadened. This Ti thickness of below 1100Å and above 1500Å showed negative effects to propagation loss and fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling was inferred to be between 1100Å-1500Å in our conditions. And for Ti thickness 1150Å, its propagation loss, horizontal/vertical mode sizes were measured 1.61dB/cm, 11.9/8.9㎛ for TM, 0.22dB/cm, 12.0/9.1㎛ for TE respectively.

급격히 꺾인 Taper를 갖는 Traveling-wave Coplanar Waveguide형 $LiNbO_34$전기광학변조기 전송선로의 전기적 특성

정운조,김성구 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.12

A traveling-wave CPW(coplanar waveguide) electrode with abruptly broken input/output-taper for LiNbO$_3$optical modulator was designed and fabricated. The electrical characteristics of traveling-wave electrode on z-cut LiNbO$_3$crystal with SiO$_2$buffer layers were measured by network analyzer. To confirm the possibility of the electro-optic modulator electrode, detailed calculations of the impedance, microwave effective index and attenuation constants are presented as a function of the microwave electrode thickness, but the buffer layer thickness is fixed as 1${\mu}{\textrm}{m}$. These characteristics are discussed from the viewpoint of the device optimization and are expected to be design guides for the LiNbO$_3$modulator’s electrodes.