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3차원 적층패키지의 Cu-Cu 접합부의 정량적 접합강도 평가 및 향상에 관한 연구
장은정,김재원,Kim, Bioh,Thorsten Matthias,현승민,이학주,박영배 한국공작기계학회 2009 한국공작기계학회 춘계학술대회논문집 Vol.2009 No.-
The quantitative interfacial adhesion energy of Cu-Cu direct thermo-compression specimen with bonding temperature and wet pre-treatment was measured by using 4 point bending test for 3-D IC integration. The evaluated interfacial adhesion energy was 2.79±0.82, 3.46±0.87, 4.93±0.2 J/㎡ bonding temperature 300, 350, 400℃ and 0.29, 1.28, 1.64, 1.17 and 0.43 J/㎡ acetic acid pre-treatment at 35℃ for 0, 1, 5, 10, and 15 min. From the result, 5 min treated Cu to Cu thermo-compression bonding has the highest interfacial adhesion energy at 350℃.
Meyer, Sven W.,Mordhorst, Thorsten F.,Lee, Choonghwan,Jensen, Paul R.,Fenical, William,Kö,ck, Matthias Royal Society of Chemistry 2010 Organic & biomolecular chemistry Vol.8 No.9
<P>A novel lumazine peptide, penilumamide (1), was isolated from the fermentation broth of a marine-derived fungal strain, identified as <I>Penicillium</I> sp. (strain CNL-338) and the structure of the new metabolite was determined by analysis of ESI-TOF MS data combined with 1D and 2D NMR experiments.</P> <P>Graphic Abstract</P><P>Penilumamide was isolated from the fungal strain <I>Penicillium</I> sp. and its structure was determined by analysis of ESI-TOF MS data combined with 1D and 2D NMR experiments. <IMG SRC='http://pubs.rsc.org/services/images/RSCpubs.ePlatform.Service.FreeContent.ImageService.svc/ImageService/image/GA?id=b910629d'> </P>
Effect of Post-Annealing Conditions on Cu-Cu Wafer Bonding Characteristics
장은정,Sarah Pfeiffer,Bioh Kim,Thorsten Matthias,Seungmin Hyun,이학주,박영배 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.3
We have evaluated the interfacial adhesion energy of Cu-to-Cu bonding by using a 4-point bending test. Cu films are sputter deposited on Si(100) wafers. The bonding of Cu to Cu is successfully achieved by using a thermo-compression method at 25000 mbar and 415℃ for 40 min. The interface between the Cu films before the bonding was not observed after thermo-compression bonding. Only a few voids were observed at the middle of the Cu bonding layer. The quantitative interfacial adhesion energy of the Cu bonding without post annealing was 10.4 J/m2. The interfacial adhesion energy was changed high post-annealing of the bonding until a temperature of 300℃. However, very weak interfacial adhesion energy is observed after post annealing under an oxygen environment at temperatures over 400℃. Growth of brittle interfacial oxides is suggested as possible explanation for the effect of the environment on the weak interfacial adhesion energy. We have evaluated the interfacial adhesion energy of Cu-to-Cu bonding by using a 4-point bending test. Cu films are sputter deposited on Si(100) wafers. The bonding of Cu to Cu is successfully achieved by using a thermo-compression method at 25000 mbar and 415℃ for 40 min. The interface between the Cu films before the bonding was not observed after thermo-compression bonding. Only a few voids were observed at the middle of the Cu bonding layer. The quantitative interfacial adhesion energy of the Cu bonding without post annealing was 10.4 J/m2. The interfacial adhesion energy was changed high post-annealing of the bonding until a temperature of 300℃. However, very weak interfacial adhesion energy is observed after post annealing under an oxygen environment at temperatures over 400℃. Growth of brittle interfacial oxides is suggested as possible explanation for the effect of the environment on the weak interfacial adhesion energy.
Annealing Temperature Effect on the Cu-Cu Bonding Energy for 3D-IC Integration
Eun-Jung Jang,Jae-Won Kim,Bioh Kim,Thorsten Matthias,박영배 대한금속·재료학회 2011 METALS AND MATERIALS International Vol.17 No.1
Interfacial adhesive energy was evaluated quantitatively in relation to the bonding temperature and subsequent thermal treatment to develop a Cu-Cu thermal compressed bonding process at low temperature for a threedimensional integration circuit (3D-IC) package. Two pieces of sputtered Cu films coated on a Si wafer were bonded at 300 °C, 350 °C, and 400 °C. A high bonding temperature increased the interfacial adhesive energy, and the original interfacial layers of Cu film gradually disappeared, as observed in focus ion beam (FIB) images. Specimens of Cu to Cu bonding were thermally compressed at 300 °C and were post-annealed at 200 °C, 250 °C, and 300 °C in a N2 environment for 1 h. As a result, the original interfacial layer of Cu disappeared at 300 °C, and an interfacial adhesive energy value above 10 J/m2 was obtained.
Cu 두께에 따른 Cu-Cu 열 압착 웨이퍼 접합부의 접합 특성 평가
김재원,정명혁,이학주,현승민,박영배,Kim, Jae-Won,Jeong, Myeong-Hyeok,Carmak, Erkan,Kim, Bioh,Matthias, Thorsten,Lee, Hak-Joo,Hyun, Seung-Min,Park, Young-Bae 한국마이크로전자및패키징학회 2010 마이크로전자 및 패키징학회지 Vol.17 No.4
3차원 TSV 접합 시접합 두께 및 전, 후 추가 공정 처리가 Cu-Cu 열 압착 접합에 미치는 영향을 알아보기 위해 0.25, 0.5, 1.5, 3.0 um 두께로 Cu 박막을 제작한 후 접합 전 $300^{\circ}C$에서 15분간 $Ar+H_2$, 분위기에서 열처리 후 $300^{\circ}C$에서 30분 접합 후 후속 열처리 효과를 실시하여 계면접착에너지를 4점굽힘 시험법을 통해 평가하였다. FIB 이미지 확인 결과 Cu 두께에 상관없이 열 압착 접합이 잘 이루어져 있었다. 계면접착에너지 역시 두께에 상관없이 $4.34{\pm}0.17J/m^2$ 값을 얻었으며, 파괴된 계면을 분석 한 결과 $Ta/SiO_2$의 약한 계면에서 파괴가 일어났음을 확인하였다. Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.
Cu-Cu 열압착 웨이퍼 접합부의 계면접합강도에 미치는 $N_2+H_2$ 분위기 열처리의 영향
장은정,김재원,현승민,이학주,박영배,Jang, Eun-Jung,Kim, Jae-Won,Kim, Bioh,Matthias, Thorsten,Hyun, Seung-Min,Lee, Hak-Joo,Park, Young-Bae 한국마이크로전자및패키징학회 2009 마이크로전자 및 패키징학회지 Vol.16 No.3
3차원 소자 집적을 위한 저온접합 공정 개발을 위해 Cu-Cu 열 압착 접합을 $300^{\circ}C$에서 30분간 실시하고 $N_2+H_2$, $N_2$분위기에서 전 후속 열처리 효과에 따른 정량적인 계면접착에너지를 4점굽힘시험법을 통해 평가하였다. 전 열처리는 100, $200^{\circ}C$의 $N_2+H_2$ 가스 분위기에서 각각 15분간 처리하였고, 계면접착에너지는 2.58, 2.41, 2.79 $J/m^2$로 전 열처리 전 후에 따른 변화가 없었다. 하지만 250, $300^{\circ}C$의 $N_2$ 분위기에서 1시간씩 후속 열처리 결과 2.79, 8.87, 12.17 $J/m^2$으로 Cu 접합부의 계면접착에너지가 3배 이상 향상된 결과를 얻을 수 있었다. Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.
접합 공정 조건이 Al-Al 접합의 계면접착에너지에 미치는 영향
김재원,정명혁,장은정,박성철,김성동,박영배,Kim, Jae-Won,Jeong, Myeong-Hyeok,Jang, Eun-Jung,Park, Sung-Cheol,Cakmak, Erkan,Kim, Bi-Oh,Matthias, Thorsten,Kim, Sung-Dong,Park, Young-Bae 한국재료학회 2010 한국재료학회지 Vol.20 No.6
3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and $6.44\;J/m^2$ for 400, 450, and $500^{\circ}C$, respectively, in a $N_2$ atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.