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Effect of Post-Annealing Conditions on Cu-Cu Wafer Bonding Characteristics
장은정,Sarah Pfeiffer,Bioh Kim,Thorsten Matthias,Seungmin Hyun,이학주,박영배 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.3
We have evaluated the interfacial adhesion energy of Cu-to-Cu bonding by using a 4-point bending test. Cu films are sputter deposited on Si(100) wafers. The bonding of Cu to Cu is successfully achieved by using a thermo-compression method at 25000 mbar and 415℃ for 40 min. The interface between the Cu films before the bonding was not observed after thermo-compression bonding. Only a few voids were observed at the middle of the Cu bonding layer. The quantitative interfacial adhesion energy of the Cu bonding without post annealing was 10.4 J/m2. The interfacial adhesion energy was changed high post-annealing of the bonding until a temperature of 300℃. However, very weak interfacial adhesion energy is observed after post annealing under an oxygen environment at temperatures over 400℃. Growth of brittle interfacial oxides is suggested as possible explanation for the effect of the environment on the weak interfacial adhesion energy. We have evaluated the interfacial adhesion energy of Cu-to-Cu bonding by using a 4-point bending test. Cu films are sputter deposited on Si(100) wafers. The bonding of Cu to Cu is successfully achieved by using a thermo-compression method at 25000 mbar and 415℃ for 40 min. The interface between the Cu films before the bonding was not observed after thermo-compression bonding. Only a few voids were observed at the middle of the Cu bonding layer. The quantitative interfacial adhesion energy of the Cu bonding without post annealing was 10.4 J/m2. The interfacial adhesion energy was changed high post-annealing of the bonding until a temperature of 300℃. However, very weak interfacial adhesion energy is observed after post annealing under an oxygen environment at temperatures over 400℃. Growth of brittle interfacial oxides is suggested as possible explanation for the effect of the environment on the weak interfacial adhesion energy.
3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향
장은정,현승민,이학주,박영배,Jang, Eun-Jung,Pfeiffer, Sarah,Kim, Bi-Oh,Mtthias, Thorsten,Hyun, Seung-Min,Lee, Hak-Joo,Park, Young-Bae 한국재료학회 2008 한국재료학회지 Vol.18 No.4
$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.