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Agroforest System Implantation for Gully Erosion Control in Pindorama Reserve, Brazil
Maria Teresa Vilela Nogueira A,Sidney Rosa Vieira,Antonio Lucio Mello Martins,Everton Luis Finoto,Eliane Gomes Fabri,Teresa Cristina Tarle Pissarra,Fernanda Fernandes Salazar,Mariana Barbara Lopes Bon 한국토양비료학회 2014 한국토양비료학회 학술발표회 초록집 Vol.2014 No.6
Teresa K.L. Boitano,Haller J. Smith,Joshua G. Cohen,Emma C. Rossi,Kenneth H. Kim 대한부인종양학회 2021 Journal of Gynecologic Oncology Vol.32 No.2
Objective: To evaluate the utility of a society-based robotic surgery training program forfellows in gynecologic oncology. Methods: All participants underwent a 2-day robotic surgery training course between2015–2017. The course included interactive didactic sessions with video, dry labs, androbotic cadaver labs. The labs encompassed a wide range of subject matter includingtroubleshooting, instrument variation, radical hysterectomies, and lymph node dissections. Participants completed a pre- and post-course survey using a 5-point Likert scale rangingfrom “not confident” to “extremely confident” on various measures. Statistical analysis wasperformed using SPSS Statistics v. 24. Results: The response rate was high with 86% of the 70 participants completing the survey. Sixteen (26.7%) of these individuals were attending physicians and 44 (73.3%) were fellows. In general, there was a significant increase in confidence in more complex proceduresand concepts such as radical hysterectomy (p=0.01), lymph node dissection (p=0.01),troubleshooting (p=0.001), and managing complications (p=0.004). Faculty comfort andpractice patterns were cited as the primary reason (58.9%) for limitations during roboticprocedures followed secondarily by surgical resources (34.0%). Conclusion: In both gynecologic oncology fellows and attendings, this educational theory based curriculum significantly improved confidence in the majority of procedures andconcepts taught, emphasizing the value of hands-on skill labs.
Electrical Properties of SiOC films according to the bonding Structure
Teresa Oh 대한전자공학회 2007 ITC-CSCC :International Technical Conference on Ci Vol.2007 No.7
The bonding structure of the SiOC film of three types was analyzed by the I-V measurement and XRD patterns. SiOC film was deposited using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The XRD patterns of SiOC film were divided into two types, and the electrical properties of SiOC film by I-V measurement divided into three types. The SiOC film with organic properties had the cross-link breakage structure and that with hybrid and inorganic properties had the cross-link amorphous structure. The SiOC film with hybrid type displayed good electric properties as insulator, but the films of other types showed that the leakage current increased. The SiOC film with inorganic and organic properties had the leakage current due to the polarization such as hydrophilic or hydrophobic properties. The SiOC film with hybrid properties decreased it because of low polarization.
Comparison with The Nano Structure Due to C=O and C=C Double Bond
teresa oh,Chi Kyu Choi,Kwang-Man lee,Kyung Sik kim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Organosilicate lm and uorinated amorphous carbon lm have been deposited by inductively coupled plasma chemical vapor deposition with the precursor of carbon composition. The conjugated C=O and C=C double bonds in synthetic organic chemistry are very important to obtain the cross-link bonding structure of sp3 carbon. For low-dielectric materials, the cross-link structure is also one of the reasons that the lms have low dielectric constant and good adhesion. Organosilicate lm of organic-inorganic hybrid type shows the chemical properties due to a C=O double bond. On the other hand, uorinated amorphous carbon lm of organic type shows the chemical properties due to a C=C double bond. The dierence between C=O bond and C=C bond of these lms is dened by Raman and FTIR spectra.
teresa oh 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.2I
The SiOC film was deposited through a dissociation and recombination of a mixed bistrimethylsilylmethane and oxygen precursor by using plasma energy. The mixed precursor consisted of organic bistrimethylsilylmethane and inorganic oxygen. The final chemical properties of the SiOC film were divided into three types, organic, hybrid, and inorganic types, because there is the hybrid type with no polarity between the alkyl group of CH$_n$ (n = 1, 2, 3, $\cdots$) sites and the hydrophilic group of OH sites. From the results obtained by peak indexing using X-ray photoelectron spectroscopy and Fourier Transform Infrared spectroscopy, the chemical properties of the hybrid and the inorganic types were similar. The current-voltage (I-V) measurements on a pentacene-channel field-effect transistor based on the SiOC film displayed good conductivity for the hybrid-type SiOC film, but the films of the other types showed poor conductivity because the leakage current increased with increasing polarization of groups, such as CH or OH groups.
Teresa Oh,최치규 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.4
SiOC thin films were deposited by using inductively coupled plasma chemical vapor deposition,and the detailed chemical properties were analyzed by using Fourier transform infrared (FTIR)spectroscopy. According to their chemical properties determined by using FTIR spectra, the dielectric constant of the SiOC film was found to be decreased due to the ionic polarization between the hydrophilic and the hydrophobic properties. The broad bonding mode in the range of 640 950 cm−1 consisted of Si-C (740 cm−1), C-O (820 cm−1), and Si-O (884 cm−1) bonds, and the peak intensity of these bonds varied with the chemical properties. The hydrophilic properties of the SiOC film showed a dominant of Si-C (740 cm−1) bond; however, the hydrophobic properties of SiOC film displayed a dominant C-O (820 cm−1) bond. The SiOC thin film with hybrid-type hydrophilic and hydrophobic properties showed a dominant of Si-O (884 cm−1) bond and had the lowest dielectric constant because of a lowering of the polarization between the hydrophilic and the hydrophobic properties.