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Phase engineering of CBD grown tin sulfide films by post-sulfurization and solar cell application
Tanka Raj Rana,JunHo Kim 한국물리학회 2016 Current Applied Physics Vol.16 No.12
We report on post-annealing effects on structures, compositions and surface morphology of chemical bath deposition (CBD) grown tin sulfide thin films. For post-annealing of as-grown tin sulfide films, we carried out three types of sulfurization at different temperatures. As grown tin sulfide films followed by sulfurization at different conditions showed modified surface morphologies and crystalline phases; SnS, Sn2S3 and SnS2 according to the sulfurization conditions. Experimental results showed that these earthabundant thin films could be engineered to have different structural, electrical and optical properties by simple post-sulfurization process, possessing significant potentials for wide fields of applications. Moreover, we made solar cell using SnS as photo absorber, which showed ~0.1% power conversion efficiency.
Fabrication and device characterization of potassium fluoride solution treated CZTSSe solar cell
Tanka Raj Rana,김준호,심준형,양기정,김대환,강진규 한국물리학회 2017 Current Applied Physics Vol.17 No.10
ost deposition treatment (PDT) for Cu2ZnSn(S,Se)4 (CZTSSe) was carried out by simply dipping the absorber into the KF solution at 80 C. The dipping time of absorber in KF solution was found to be crucial to device parameters of CZTSSe solar cell. The K-doping improved the solar cell efficiency from 4.4% to 7.6% by 1 min dipping whereas the longer than 5 min dipping solar cells showed distorted kink J-V curves. The activation energy of CZTSSe solar cell was increased upto 1 min KF treatment from 0.83 eV to 0.92 eV which indicates interface recombination is reduced significantly. However, the activation energies of 5 min and 10 min dipping solar cells were found to be 0.81 eV and 0.63 eV where dominant recombination was interface recombination. Furthermore, trap energies of 49 meV and 298 meV of pristine CZTSSe solar cell were modified to 33 meV and 117 meV for 1 min treated CZTSSe solar cell. Trap energies of 5 min were calculated to be 112 meV and 147 meV. The proper KF doping passivated the shallow as well as deep defects of CZTSSe solar cell which is reflected in photovoltaic performances directly.
Tanka Raj Rana,김성연,김준호 한국물리학회 2018 Current Applied Physics Vol.18 No.6
Tin sulfide (SnS) film is grown by sputtering process with subsequent post-sulfurization. As-deposited SnS consists of orthorhombic and cubic structure SnS whereas post-sulfurized films showed pure orthorhombic crystal structure. This structural transformation was confirmed by X-ray diffraction (XRD), Raman spectroscopy and UV–Vis spectroscopy. We used post-annealed SnS film as an absorber layer of solar cell. The fabricated SnS solar cell was composed of SLG/Mo/SnS/CdS/i-ZnO/ITO. We measured current density-voltage (J-V) and external quantum efficiency (EQE) curves for the completed devices. The best efficiency of SnS solar cell was ∼0.5%. The EQE curve showed existence of multiple phases of SnS, even though XRD and Raman spectroscopy showed pure SnS phase. The multiple phases were observed again by photoluminescence (PL). PL also revealed deep defect states of SnS absorber. Thus, the inhomogeneous SnS absorber is one of the main bottlenecks for high efficiency SnS solar cell.
Wet chemical synthesis of WO3 thin films for supercapacitor application
Nanasaheb Madhukar Shinde,Ajay Dattu Jagadale,Vijay Shamrao Kumbhar,Tanka Raj Rana,김준호,Chandrakant Dnyandev Lokhande 한국화학공학회 2015 Korean Journal of Chemical Engineering Vol.32 No.5
Tungstic oxide (WO3) thin films have been synthesized by wet chemical method, i.e., successive ionic layer adsorption and reaction (SILAR) method. These films are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical absorption techniques. The XRD pattern revealed the formation of polycrystalline WO3 films. Scanning electron micrographs demonstrate the three-dimensional aggregated irregular extended rod shaped morphology of WO3 thin films. The WO3 film showed a direct band gap of 2.5 eV. The WO3 film exhibited specific capacitance of 266 F·g−1 in 1M Na2SO4 electrolyte at the scan rate of 10mVs−1.