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Junsoo Kim,Soo-Jung Kim,Jung Yoon Kwon,Wonchul Choi,Hyuk Jin Kim,Taekwang Kim,Sol Yee Im,Jaewoo Lee,이승민,장문규,Seung Eon Moon 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.12
To study the electric and the thermoelectric properties of silicon thin films (SiTFs), we fabricated devices having SiTFs by using conventional complementary metal-oxide-semiconductor (CMOS)- compatible processes for mass production and extendibility. The conductivities and the Seebeck coefficients of SiTFs for dose concentrations of 5 × 1014 cm−2, 1 × 1015 cm−2 and 5 × 1015 cm−2 and for temperatures in the range of 310 to 430 K were measured by using homemade setup. The measured power factors of the SiTFs showed a slight increasing tendency with increasing measurement temperature and were maximum at a dose concentration of 1 × 1015 cm−2 for both n- and p-type films at 330 K.
Kim, Seonyeong,Shin, Somyeong,Kim, Taekwang,Du, Hyewon,Song, Minho,Kim, Ki Soo,Cho, Seungmin,Lee, Sang Wook,Seo, Sunae IOP 2017 Nanotechnology Vol.28 No.17
<P>The modulation of charge carrier concentration allows us to tune the Fermi level (<I>E</I> <SUB>F</SUB>) of graphene thanks to the low electronic density of states near the <I>E</I> <SUB>F</SUB>. The introduced metal oxide thin films as well as the modified transfer process can elaborately maneuver the amounts of charge carrier concentration in graphene. The self-encapsulation provides a solution to overcome the stability issues of metal oxide hole dopants. We have manipulated systematic graphene p-n junction structures for electronic or photonic application-compatible doping methods with current semiconducting process technology. We have demonstrated the anticipated transport properties on the designed heterojunction devices with non-destructive doping methods. This mitigates the device architecture limitation imposed in previously known doping methods. Furthermore, we employed <I>E</I> <SUB>F</SUB>-modulated graphene source/drain (S/D) electrodes in a low dimensional transition metal dichalcogenide field effect transistor (TMDFET). We have succeeded in fulfilling n-type, ambipolar, or p-type field effect transistors (FETs) by moving around only the graphene work function. Besides, the graphene/transition metal dichalcogenide (TMD) junction in either both p- and n-type transistor reveals linear voltage dependence with the enhanced contact resistance. We accomplished the complete conversion of p-/n-channel transistors with S/D tunable electrodes. The <I>E</I> <SUB>F</SUB> modulation using metal oxide facilitates graphene to access state-of-the-art complimentary-metal-oxide-semiconductor (CMOS) technology.</P>
재정돈을 포함한 장치장 크레인의 작업 할당 전략 최적화
김태광(Taekwang Kim),양영지(Youngjee Yang),배애경(Aekyoung Bae),류광렬(Kwang Ryul Ryu) 한국항해항만학회 2014 한국항해항만학회지 Vol.38 No.2
자동화 컨테이너 터미널의 장치장은 수출입 되기 전의 컨테이너를 임시로 보관하는 장소이다. 모든 컨테이너는 반드시 장치장을 거치기 때문에 효율적인 장치장 운영은 터미널 생산성 향상에 큰 영향을 미친다. 효율적인 장치장 운영을 위해서 컨테이너의 위치 선정은 매우 중요하며 보통 컨테이너의 적재 위치는 컨테이너가 장치장으로 들어올 때 정해진다. 하지만 컨테이너가 처음에 최적의 장치 위치로 적재되었더라도 시간이 흐름에 따라 최적의 위치가 달라질 수 있다. 이에 대부분 터미널에서는 컨테이너를 좋은 위치로 재배치하는 재정돈을 수행하고 있다. 기존 연구에서 재정돈에 관한 여러 가지 방안이 제시되었지만 모두 본 작업이 없는 크레인 유휴 시간을 이용하는 것을 전제로 하여 현실적으로 적용에 제약이 있었다. 본 논문에서는 본 작업 중에 언제라도 기회가 있을 때마다 재정돈을 수행할 수 있는 크레인 작업 할당 방안을 제안한다. 시뮬레이션을 통한 실험 결과 제안 방안이 터미널 생산성 향상에 효과적으로 기여함을 확인하였다. In container terminals, stacking yard is the place where import and export containers are temporarily stored before being loaded onto or after being discharged from a ship. Since all the containers go through the stacking yard in their logistic flow, the productivity of the terminal critically depends on efficient operation of stacking yard, which again depends on how well the stacking locations of the incoming containers are determined. However, a good location for stacking an incoming container later can turn out to be a bad one when that container is to be fetched out of the stacking yard, especially if some rehandling is required. This means that good locations for the containers are changing over time. Therefore, in most container terminals, the so-called remarshaling is done to move the containers from bad location to good locations. Although there are many previous works on remarshaling, they all assume that the remarshaling can be done separately from the main jobs when the cranes are idle for rather a long period of time. However, in reality, cranes are hardly available for a period long enough for remarshaling. This paper proposes a crane dispatching strategy that allows remarshaling jobs to be mixed together with the main jobs whenever an opportunity is detected. Experimental results by simulation reveals that the proposed method effectively contributes to the improvement of terminal productivity.
Graphene transfer with self-doping by amorphous thermoplastic resins
Shin, Somyeong,Kim, Seonyeong,Kim, Taekwang,Du, Hyewon,Kim, Ki Soo,Cho, Seungmin,Seo, Sunae Elsevier 2017 Carbon Vol.111 No.-
<P>The wet transfer of graphene requires sacrificial layer, which can support graphene during the removal of metallic substrate and prevent mechanical damage of thin graphene. However, the used polymer layer leaves an amounts of debris or residue on the graphene surface. The typical amorphous thermoplastic resins that consist of macromolecular chains with no crosslinks between the chains have been investigated as sacrificial layers for transferring graphene grown on metallic substrate. We have observed that the strong interaction of graphene and polymer provides clean surface without a chuck of residues and largely diminishes wrinkles and folds of transferred graphene. In addition, due to the increased substrate coupling as well as uniform plausible covalent bonding, we have achieved significant amount of electron transfer from graphene. Thus, polymer-self-doped-graphene during the transfer process has no need for the additional doping process or annealing process in order to obtain clean and flat surface with reduced sheet resistance. No thermal budget makes graphene available towards flexible transparent device application. (C) 2016 Elsevier Ltd. All rights reserved.</P>