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만성 주관 증후군에서 전기신경학적 진단 및 수술적 치료
황정수,어경윤,문상호,김욱년,하정호,김범,김영성,박소강 동국대학교 경주대학 2000 東國論集 Vol.19 No.-
The results of various treatments for ulnar neuropathy secondary to the chronic cubital tunnel syndrome are some controversial. A prospective study was done to determine the clinical and electrophysiological results of our surgical method which is composed of in situ release, medial epicondylectomy and nerve transposition onto the bony surface on where medial epicondyle was after smoothening. Clinical result was evaluated by scoring system which was made by Adelaar et al, and short segment stimulation test which were designed to localize the more discrete region at elbow. Latency and amplitude changes were determined by stimulating the ulnar nerve at 2㎝ intervals across the elbow. The four patients with chronic ulnar nerve palsy at the elbow level were selected. Average follow-up duration is 11.25 months and the patients had symptoms for an average of 33 months before surgery. All patients had good clinical scores and significant latency changes compared to preoperative nerve conduction studies. According to this study, we think that our operative method is a good treatment for chronic cubital tunnel syndrome.
Large-Area Fabrication of Patterned ZnO-Nanowire Arrays Using Light Stamping Lithography
Hwang, Jae K.,Cho, Sangho,Seo, Eun K.,Myoung, Jae M.,Sung, Myung M. American Chemical Society 2009 ACS APPLIED MATERIALS & INTERFACES Vol.1 No.12
<P>We demonstrate selective adsorption and alignment of ZnO nanowires on patterned poly(dimethylsiloxane) (PDMS) thin layers with (aminopropyl)siloxane self-assembled monolayers (SAMs). Light stamping lithography (LSL) was used to prepare patterned PDMS thin layers as neutral passivation regions on Si substrates. (3-Aminopropyl)triethoxysilane-based SAMs were selectively formed only on regions exposing the silanol groups of the Si substrates. The patterned positively charged amino groups define and direct the selective adsorption of ZnO nanowires with negative surface charges in the protic solvent. This procedure can be adopted in automated printing machines that generate patterned ZnO-nanowire arrays on large-area substrates. To demonstrate its usefulness, the LSL method was applied to prepare ZnO-nanowire transistor arrays on 4-in. Si wafers.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2009/aamick.2009.1.issue-12/am900580v/production/images/medium/am-2009-00580v_0007.gif'></P>
Effects of Cu Content on Performance of Semi-Transparent Cu(In,Ga)Se₂ Solar Cells
Sangho Kim(김상호),Ahreum Lee(이아름),Joo Hyung Park(박주형),Jinsu Yoo(유진수),Ara Cho(조아라),Donghyeop Shin(신동협),Inyoung Jeong(정인영),Inchan Hwang(황인찬),Kihwan Kim(김기환),Jun-sik Cho(조준식) 한국신재생에너지학회 2022 한국신재생에너지학회 학술대회논문집 Vol.2022 No.4
Micro-sprinkler Irrigation Uniformity as Affected by Different Water Pressure and Outlet Intervals
Sangho Jeon,Seonah Hwang,Yeonkyu Sonn,Byungkeun Hyun,Woori Go,Sungang Yun,Kyunghwa Han 한국토양비료학회 2018 한국토양비료학회지 Vol.51 No.4
This study carried out to evaluate the water distribution uniformity of micro-sprinkler to improve water utilization efficiency. The water quantity and the water pressure were measured according to the spacing of micro-sprinkler and adjusting the applied water pressure. The results showed that the spacing of the micro-sprinklers a decisive influence on the distribution uniformity, but the change in hydraulic pressure did not have a significant effect. The water quantity was reduced by 22.7 ± 1.6 % when the water pressure dropped 100 kPa. Each micro-sprinkler has different spray pattern. The wetted radius was measured about 4 m. A peak was found within a meter radius from the center of the micro-sprinkler and gentle slope between 2 - 4 m. The appropriate spacing is 2 - 4 m depend on micro-sprinkler and purpose of the system. The results would be used in micro-sprinkler system guideline and design for best water distribution uniformity.
Design and Implementation of a Massively Parallel Multithreaded Architecture: DAVRID
Sangho Ha,Junghwan Kim,Eunha Rho,Yoonhee Nah,Sangyong Han,Daejoon Hwang,Heunghwan Kim,Seungho Cho 한국정보과학회 1996 Journal of Electrical Engineering and Information Vol.1 No.2
MPAs(Massively Parallel Architectures) should address two fundamental issues for scalability: synchronization and communication latency. Dataflow architecture faces problems of excessive synchronization overhead and inefficient execution of sequential programs while they offer the ability to exploit massive parallelism inherent in programs. In contrast, MPAs. based on von Neumann computational model may suffer from inefficient synchronization mechanism and communication latency. DAVRID(DAtaflow/Von Neumann RISe hybrID) is a massively parallel multithreaded architecture which takes advantages of von Neumann and dataflow models. It has good single thread performance as well as tolerates synchronization and communication latency. In this paper, we describe the DAVRID architecture in detail and evaluate its performance through simulation runs over several benchmarks.
Polycrystalline NiO Thin Films Applicable to Nano-Storage Media
Inrok Hwang,박배호,Dongchul Kim,Inkyung Yoo,Jinho Lee,Jinsik Choi,Jinsoo Kim,Sahwan Hong,Sangho Jeon,Sanghoon Kim,Sunae Seo,강성웅,Yong-Il Kim 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.-
We have investigated local electrical properties of NiO thin films applicable to nano-storage devices. Polycrystalline NiO thin films were deposited on Pt/Ti/SiO2/Si substrates by dc magnetron reactive sputtering methods. X-ray diffraction (XRD) data have shown that polycrystalline NiO films without second phases were grown on the substrates. We also observed root mean square roughness of 1.9 nm in the 15μm × 15 μm area of a NiO film by using atomic force microscopy (AFM) mode. Using conducting atomic force microscopy (C-AFM) mode, we measured the change in local current distribution and found that the grown NiO films exhibited excellent resistance switching behavior at the nanoscale and good retention behavior of the written nano-sized domains. Moreover, we investigated the relation between pulse height and bit size. It was possible to write 8×8 bits in 4×4 μm² area and to store digital information corresponding to several Gbit/inch². Therefore, we successfully showed the feasibility of NiO films as media for nano-storage devices. We have investigated local electrical properties of NiO thin films applicable to nano-storage devices. Polycrystalline NiO thin films were deposited on Pt/Ti/SiO2/Si substrates by dc magnetron reactive sputtering methods. X-ray diffraction (XRD) data have shown that polycrystalline NiO films without second phases were grown on the substrates. We also observed root mean square roughness of 1.9 nm in the 15μm × 15 μm area of a NiO film by using atomic force microscopy (AFM) mode. Using conducting atomic force microscopy (C-AFM) mode, we measured the change in local current distribution and found that the grown NiO films exhibited excellent resistance switching behavior at the nanoscale and good retention behavior of the written nano-sized domains. Moreover, we investigated the relation between pulse height and bit size. It was possible to write 8×8 bits in 4×4 μm² area and to store digital information corresponding to several Gbit/inch². Therefore, we successfully showed the feasibility of NiO films as media for nano-storage devices.