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Soft X-ray magnetic circular dichroism of Cr-doped GaN
H.Makino,J.J.Kim,T.Nakamura,T.Muro,K.Kobayashi,T.Yao 한국물리학회 2004 Current Applied Physics Vol.4 No.6
Soft X-ray magnetic circular dichroism (XMCD) have been measured for the Ga0:97Cr0:03N lm grown by NH3-assistedmolecular beam epitaxy. Temperature dependence of the XMCD intensity was well described by the CurieWeiss law. Although thesample showed ferromagnetic behavior at least up to room temperature, the ferromagnetic component could not be detected by the XMCD measurement.
Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy
J.H.Chang,J.Y.Lee,M.Yang,H.S.Ahn,S.N.Yi,K.Goto,K.Godo,H.Makino,M.W.Cho,T.Yao,J.S.Song 한국물리학회 2004 Current Applied Physics Vol.4 No.6
Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To inves-tigate the origin of the highly ecient luminescence, various optical spectroscopic methods such as, photoluminescence (PL),temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found thatstructural inhomogeneities aect dominant inuence on the line width and line shape of luminescence. The luminescence intensitygreatly enhanced by the localization of exciton at the disorder induced localized states.
B. H. KOO,C. G. LEE,D. SHINDO,H. MAKINO,J. H. CHANG,T. YAO,T. HANADA,Y.-G. PARK 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
The effect of growth interruption (GI) on the structural and optical properties of InAs nanostructures was investigated by transmission electron microscopy (TEM) and photoluminescence (PL). By introducing the GI, a single PL peak changed to a distinctive multiple-peak feature with average full width at half maximum 30 meV, which shows the state lling of the several low energy peaks. In conjunction with the TEM results, the changes in the PL spectra due to GI are most probably correlated with the formation of different-height islands isolated from neighbor islands due to a 2D-3D transition of the InAs layer during the GI.
Field emission properties of indium-doped ZnO tetrapods
M.N. Jung,S.H. Ha,S.J. Oh,구지은,조영래,H.C. Lee,S.T. Lee,T.-I. Jeon,J.H. Chang,H. Makino 한국물리학회 2009 Current Applied Physics Vol.9 No.2
Indium-doped ZnO (ZnO:In) tetrapods (TPs) with considerably high In content (In < 15 at.%) have been successfully synthesized by a mixed-source vapor phase transportation method (VPT). Powder X-ray diffraction (XRD) measurement of ZnO:In TPs revealed a single hexagonal phase, that indicates high structural quality of ZnO:In TPs. From room-temperature photoluminescence (PL) spectra, the Burstein–Moss (BM) shift was observed, which shows an increase of extrinsic carrier concentration. Also, we could observe field emission from ZnO:In TPs (8 at.%) with a threshold voltage (Eth) of 5.36 V/㎛ at a current density of 0.1 μA/㎠. These results show the feasibility of impurity doping for tailoring the physical properties of ZnO-based nanostructures.
Field emission properties of indium-doped ZnO tetrapods
Jung, M.N.,Ha, S.H.,Oh, S.J.,Koo, J.E.,Cho, Y.R.,Lee, H.C.,Lee, S.T.,Jeon, T.I.,Makino, H.,Chang, J.H. Elsevier 2009 Current Applied Physics Vol.9 No.2
Indium-doped ZnO (ZnO:In) tetrapods (TPs) with considerably high In content (In<15at.%) have been successfully synthesized by a mixed-source vapor phase transportation method (VPT). Powder X-ray diffraction (XRD) measurement of ZnO:In TPs revealed a single hexagonal phase, that indicates high structural quality of ZnO:In TPs. From room-temperature photoluminescence (PL) spectra, the Burstein-Moss (BM) shift was observed, which shows an increase of extrinsic carrier concentration. Also, we could observe field emission from ZnO:In TPs (8at.%) with a threshold voltage (Eth) of 5.36V/μm at a current density of 0.1μA/cm<SUP>2</SUP>. These results show the feasibility of impurity doping for tailoring the physical properties of ZnO-based nanostructures.
본흔 구,C.-G. Lee,D. Shindo,H. Makino,J. H. Chang,J. H. Lee,T. Yao,T. Hanada,Y. D. Kim,Y.-G. Park 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
InAs quantum dots (QDs) on In$_{0.52}$Al$_{0.48}$As layer lattice matched to (100) InP substrates were grown by solid-source molecular beam epitaxy. We performed a study on the structural and optical properties of InAs QDs with 0.8 eV (1.55 $\mu$m) emission by using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM image showed clear existence of the QDs. The PL showed $\sim$0.8 eV ($\sim$1.55 $\mu$m) emission from dislocation-free InAs QDs with height of $\sim$3.6 nm and base width of $\sim$20 nm. Activation energies obtained from temperature dependence of the integrated PL intensity were also similar to the reported values, confirming the formation of InAs QDs.