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Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy
J.H.Chang,J.Y.Lee,M.Yang,H.S.Ahn,S.N.Yi,K.Goto,K.Godo,H.Makino,M.W.Cho,T.Yao,J.S.Song 한국물리학회 2004 Current Applied Physics Vol.4 No.6
Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To inves-tigate the origin of the highly ecient luminescence, various optical spectroscopic methods such as, photoluminescence (PL),temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found thatstructural inhomogeneities aect dominant inuence on the line width and line shape of luminescence. The luminescence intensitygreatly enhanced by the localization of exciton at the disorder induced localized states.