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        Polarization Maintaining Dichroic Beam-splitter and Its Surface Shape Control by Back Side AR Coating

        Chong Ma,Gang Chen,Dingquan Liu,Rong-Jun Zhang,Junbo He,Xudan Zhu,Daqi Li 한국광학회 2021 Current Optics and Photonics Vol.5 No.5

        Dichroic beam-splitter (DBS) with polarization-maintaining took an important role in the free space quantum telecommunication tests on the Micius satellite of China. In this presentation, we designed and prepared a 50 layer polarization-maintaining DBS coating by a dual ion beam sputtering deposition (Dual-IBS) method. In order to solve a stress problem, an 18 layer special anti-reflection (AR) coating with similar physical thickness ratio was deposited on the backside. By stress compensation, the surface flatness RMS value of the DBS sample decreased from 0.341 λ (@632.8 nm) to 0.103 λ while beam splitting and polarization maintaining properties were almost kept unchanged. Further, we discussed the mechanism of film stress and stress compensation by equation deduction and found that total stress had a strong relationship with the total physical thickness and the ratio of layer materials.

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        Crystal structure, dielectric and piezoelectric properties of Ta/W codoped Bi3TiNbO9 Aurivillius phase ceramics

        Zhihang Peng,Dongxu Yan,Qiang Chen,Deqiong Xin,Dan Liu,Dingquan Xiao,Jian-guo Zhu 한국물리학회 2014 Current Applied Physics Vol.14 No.12

        Aurivillius phase Bi3Ti1xTaxNb1xWxO12 high temperature piezoceramics were prepared by a conventional solid state reaction method. The crystal structure, dielectric, electrical conduction and piezoelectric properties were systematically studied. Pure or modified Bi3TiNbO9 ceramics revealed the presence of only two-layered Aurivillius phase, indicating that Ta/W doping entered into the B-site of pseudo-perovskite structure and formed solid solutions. The Curie temperature had a strong reliance on the structural distortion. Furthermore, Ta/W dopants act as a donor doping, decrease the number of oxygen vacancies and facilitate the domain wall motion. As a result, Ta/W modifications significantly increase the DC resistivity and piezoelectric properties. Bi3Ti0.98Ta0.02Nb0.98W0.02O12 ceramics possess the optimum d33 value (~12.5 pC/N) together with a high TC point (~893 C). Moreover, the resonance eantiresonance spectra demonstrate that the Ta/W-BTN ceramics are indeed piezoelectric in nature at 600 C. The d33 value of BTTNW-2 ceramic remains ~12.2 pC/N after annealing at 700 C. These factors suggest that the BTTNW-based ceramic is a promising candidate for ultra-high temperature sensor applications.

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