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      • 다공질 실리콘을 이용한 미세 기계구조의 제조

        조찬섭,이봉희,이종현,최규만 경북대학교 센서기술연구소 1990 센서技術學術大會論文集 Vol.1 No.1

        Micromechanical structures such as cantilever beams and bridge array (~μm thick, 100~500 μm long) were fabricated by formation of porous silicon layer. The beam array of n/p samples have irregular etched surface and cusp. On the otherhand, beams of n/n^(+)/n structure have clear etched surface and no cusp.

      • 대전시의 도시공간구조의 형성에 관한 연혁적 연구(1)

        최창규,조민상,최봉문 牧園大學校 建築·都市硏究센터 1998 建築·都市環境硏究 Vol.6 No.-

        The purpose of this paper is to trace the process of development and spatial change on urban structure of Taejun form the birth. For that purpose we reorganize the process of urban growth and city development project from the birth(1904) to present 1998. We select some factors as the elements what represents spatial change, Administrative District change, Population Growth, Development Project and Urban Planning By this study we want to identify the reasons which result the irregular and unsafe road system from the historical factor.

      • 구매자-공급자 장기관계와 거래성과에 관한 개념적 연구

        한상린,조규봉 충남대학교 경상대학부설 경영경제연구소 1997 경영논집 Vol.13 No.2

        본 연구에서는 산업재 시장에서 구매자와 공급업자간의 장기협력관계에 거래특성요인 및 관계결속요인이 어떠한 영향을 미치는지를 개념적으로 규명하고, 구매자와 공급업체간의 장기협력관계가 관계성과와 어떠한 관련이 있는가를 파악하고자 하였다. 장기관계에 따른 성과에 영향을 미치는 관계결속(Relational Commitment)으로는 몰입(Commitment)과 신뢰(Trust)를 설정하고 각각의 관계 결속에 영향을 미치는 거래특성변수에 대한 접근방법으로서 거래비용측면에서의 기회주의, 거래특유자산, 기술적 요인, 제품의 특성, 의사소통의 용이성, 환경불확실성 등을 연구변수로 사용하여 하나의 개념적 연구모형을 제시하였다.

      • SCOPUSSCIEKCI등재

        측뇌실내 종괴의 감별진단 및 수술적 치료

        김동규,김봉수,이상형,심기범,왕규창,정희원,김현집,조병규,최길수,한대희 대한신경외과학회 1993 Journal of Korean neurosurgical society Vol.22 No.2

        We present a series of 42 patients with the lateral ventricular mass lesions who underwent operative removal between 1979 and 1992 at the Seoul National University Hospital. These lesions included 29 tumors, 10 benign cysts and 3 arteriovenous malformations. There were 20 lesions in the trigone, 14 in the frontal horn, 6 in the body, and 2 in the temporal horn. Together with the age of the patient, the location in the lateral ventricle and the CT or MR patterns, the range of the differential diagnosis of the lesions can be narrowed. The mass were removed by various surgical approaches ; 11 by the middle frontal gyrus, 10 by the superior parieto-occipital, 13 by the middle temporal gyrus, 4 by the anterior transcallosal, 2 by the posterior transcallosal and 3 by the combined approaches. The superior parieto-occipital approach left postoperative morbidities in 64% and other approaches in 20 to 25% of the cases. These morbidities included hemiparesis, hemianopsia, aphasia, memory distubance and seizure. Most hydrocephalus disappeared without the shunting procedure after removal of the lateral ventricular mass. The high frequency of postoperative complications in the superior parieto-occpital approach require meticulous consideration in the selection of this approach.

      • KCI등재

        새로운 매체현실과 문화변화

        최문규,김회봉,조경식,서규환 한국독일어문학회 2000 독일어문학 Vol.11 No.-

        Der Begriff "Medienrealita¨t" ist heute aktuell geworden. Obwohl die Medien zur Vemittlung der Kommunikation auch in der Vergangenheit sehr verallgemeinert worden sind, gelten sie heute nicht mehr als bloβes Mittel. Die Entwicklung der elektronischen bzw. technologischen Medien vera¨ndert sowohl die Realita¨t unserer Welt als auch das Sein schlechthin. Der Begriff "Medienrealitat" ist synonym mit den anderen Begriffen wie "digitaler Schein" bzw. "virtuelle Realita¨t". "Informationsgesellschaft", die den tradierten Gegensatz zwischen Sein und Schein. dem Wahren und dem Falschen auflo¨st und zu einer neuen "Form der Realita¨t" avanciert werden. Um die Medienrealita¨t zu analysieren. werden im zweiten Kapitel die verschiedenen Elemente illuminiert, durch die neue Medienrealita¨t und Kultur konstituiert werden: ganz neue "immaterielle Basis der Information. Macht der Bilder, Geschwindigkeit, neue computerielle Wahrnehmung. "Medienwerk". Diese Elemente beherrschen sowohl die Realita¨t als auch die Kultur. Abschlieβend wird die Mo¨glichkeit reflektiert. wie die Kunst (besonders die Literatur) die Medienrealita¨t u¨berwinden und ihre alternativen Wege ero¨ffnen kann. Im dritten Kapitel wird der Begriff "virtuelle Realita¨t" philosopisch uberpruft, wobei er die Gemeinsamkeiten mit den tradierten philosophischen Begriffen wie "dynamis, "potentia, "virtualite"~possibi1ite usw. teilt. Auch kann der Widerspruch der "virtuellen Realita¨t" besta¨tigt werden, die vor allem auf der radikalen Vera¨nderung von Technik. Information und Kapital basiert. Das heiβt: es ist ein Widerspruch oder die Verhu¨llung der ontologischen Implikation, daβ die virtuelle Realita¨t durch die allma¨hliche Negierung ihrer Virtualita¨t zur Realita¨t erhoben wird. Im vierten Kapitel wird das Verha¨ltnis der Gesellschaft zu Umwelt. Information und Medien aus der Sicht der Luhmannschen Systemtheorie betrachtet. Daraus ergibt sich. dass die Gesellschaft als Sozialsystem bei ihrer Selbstreproduktion mit der Leitdifferenz von System/Umwelt operiert und damit die elbstreproduktion der Gesellschaft von der Vera¨nderung ihrer Umwelt (Technik, Bewuβtsein, Organismus usw.) abha¨ngig ist. Dabei ist deutlich, dass Medien (Schrift. Buchdruck. Elektronik usw.). die zur Verbreitung der Informationen dienen, bei der Evolution der Gesellschaft eine entscheidende Rolle gespielt haben. Schlieβlich handelt es sich um die unterschiedlichen soziologischen Theorien u¨ber das Verhaltnis von Medien und Gesellschaft. In den Vordergrund treten dabei die Theorien von D. Bell und M. Poster. Bells Theorie der postindustriellen Gesellschaft behandelt die Entwicklung der Technologie. die heute die Kultur und die Gesellschaftsstruktur stark vera¨ndert. Gegen Bell postuliert Poster eine Wende von der Produktionsweise zur Informationsweise, indem er die erwandtschaft mit der postmodernen Theorie teilt. Seiner Perspektive zufolge gilt heute nicht das Kapital. sondern die Information als Hauptmovens der Gesellschaft. Die Medien ko¨nnen weder das Absolute noch die Utopie sein. Was der Euphorie der sog. "idealen Entwicklung der Medien" kritisch gegenu¨berstehen kann. ist nichts anderes als die kritische Reflexion der Kunst.

      • 人體에서 分離한 葡萄糖 非醱酵菌의 抗菌劑 耐性에 關한 硏究

        李淵台,崔承求,朴哲熙,曺圭鳳 단국대학교 대학원 1991 學術論叢 Vol.15 No.-

        This experiment was conducted to classify for the 82 strains of glucose nonfermentative bacteria obtained from K hospital, in 1988, on the biological differentials and to test the resistance reaction on the drugs for those strains. The results were as follows : 1. Eighty two strains were classified into 65 strains of 79.3% of Ps. aeruginosa, 10 strains of 12.2% of Ps. cepacia, and 7 strains of 8.5% of Ac. calcoaceticus as results of 0 F sugar test, oxidase test, and DNase test. 2. It showed that Ps. aeruginosa was coincided with AP, CM, GM, KM, CF, and TC from the disk and MIC methods in the test of resistance reaction to antimicrobial agent, and especially, that AK and TOB KM and GM were observed high resistance reactive from MIC method. Resistnace to antibiotics for Ps. cepacia showed the identical reaction to AP, CB, CM, AK, SPT, CF, TC, TOB, KM and GM were observed high resistance reative from MIC method. Ac. calcoaceticus was identified the same resistance reaction to antibiotics to CB, KM, GM, AK, CF, and TOB, AP, SPT and TC showed high resistance reaction from the disk method. 3. CF and AP were observed the highest resistance reactions among 10 kinds of drugs used in this experiment and following was CM, KM and TC in order. 4. Ps. aeruginosa, Ps. cepacia, and Ac. calcoaeticus showed all multiple resistance reactions in the test of resistance to drugs, and Ps. aeruginosa was identified high resistance reaction to 6 drugs in 24.6%, Ps. cepacia was 9 drugs in 60%, and Ac. calcoaceticus showed resistance reaction to various kinds of drugs. 5. It showed important question in result of these studies that resistance percentage of NFB decreased by optimal antimicrobial selection and effective treatment established from serious antimicrobial treatment.

      • KCI등재

        FC-25계 회주철의 이온질화처리에 따른 표면특성과 고온산화거동에 관한 연구

        허인창,손근수,윤재홍,조동율,박봉규,김현수,김인수 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.4

        Surface properties and high temperature oxidation behavior were investigated for FC-25 Gray Cast Iron(GCI) and the ion nitrided GCI(N-GCI). The GCI was pre-cleaned to improve hardness to the optimum pre-sputtering parameters with an Ar/H₂ ratio of 1/2, working pressure of 3 torr, working temperature of 550℃ and working time of 1hour. The optimum nitriding conditions for the maximum hardness of 560575 Hv were an N₂/H₂ ratio of 3/1, working pressure of 3 torr, and working temperature of 575℃. The thickness of graphite in the GCI was increased by increasing the working temperature from 525℃ to 595℃ for the nitriding time of 6-18hrs. XRD patterns showed FeO and Fe₂O₃ peaks for both the oxidized N-GCI and GCI at temperatures of 600℃ and 800℃ under atmospheric environment for both 24 and 60hours. At 800℃, above the Fe4N decomposition temperature of 680℃, the oxidation rate of N-GCI was greater than that of the GCI. The most abundant nitride, Fe4N, was decomposed and the nitrogen gas given off by the decomposition made the protective film porous by degassing through the film. But at 600℃, below the decomposition temperature, the degree of oxidation of N-GCI was lower than that of the GCI because the nitride film worked as protective barrier for oxidation. (Received October 29, 2004)

      • AC PDP 네 투명 유전층의 절연내력과 투과율에 관한 연구

        박정후,이성현,손재봉,김규섭,조정수 釜山大學校生産技術硏究所 1998 生産技術硏究所論文集 Vol.54 No.-

        AC PDP(plasma display panel)는 40인치 이상의 대화면 디스플레이 장치로서, AC PDP내 투명 유전층은 방전플라즈마중의 양이온 충격에 의해서 금속전극이 스파터되는 것을 보호하고, 유전층 표면에 벽전하를 형성하여 대화면 구동에 필요한 메모리기능을 부가하므로 방전 cell구조에서 필수적인 부분이다. 이러한 유전층은 우수한 절연내력을 가져야할 뿐 아니라 가시광을 투과시키기 위한 높은 투과율이 요구된다. 따라서 본 연구에서는 여러 조건들 하에서 유전층의 절연내력과 투과율에 관하여 논하였다. 그 결과 15μm 두께를 가지고 570℃에서 소성을 행한 유전층의 경우 최소 29V/μm의 절연 내력을 가졌고, 80%정도의 투과율을 나타내었다. 그러므로 AC PDP에서 적정유전층의 두께는 최고인 가전압에 대해서 약 80V 정도의 마진을 가지는 15μm정도가 적당하다고 생각된다. AC PDP(plasma display panel) is large display panel over 40 inch. The transparent dielectric layers in AC PDP are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function necessary to drive large panel. This layer should have high dielectric strength, and also be transparent because visiable light must pass through this layer. Therefore in this paper, we discussed the dielectric strength and transmittance coefficient of the dielectric layer under various conditions. As a result, on the 15μm thickness, the minimum dielectric strength was 29V/μm and the transmittance coefficient was about 80% after 570℃ firing process. It is considered that the resonable dielectric thickness in AC PDP is 15μm because it has about 80V margin on the maximum applied voltage.

      • KCI등재

        FC-25계 회주철의 Boro-Nitriding 복합 표면처리에 따른 표면특성과 고온산화거동에 관한 연구

        허인창,손근수,윤재홍,조동율,박봉규,김현수,김인수 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.2

        Surface properties and oxidation behavior were studied for FC-25 gray cast iron (GCI), ion nitrided CCI (N CCI), powder boronized CCI (B GCI) and powder boronized N CCI (B-N GCI). A boride (Fe2B and FeB) layer with a tooth shape was formed by boronizing GCI at 650℃. The thickness and hardness of the layer were proportional to boronizing temperature and time. The hardness was decreased as the depth of the boronized layer increased. The activation energy for boride formation was about 74 kJ/mol. The thickness of the graphite layer formed by boronizing was increased by increasing temperature and time. A silicon layer insoluble to borides accumulated beneath the boride layer. The major phases were Fe4N, Fe3N and FeN in the nitride layer formed by ion nitriding. The thickness and hardness of the layer increased with increasing nitriding temperature and time under the Fe4N decomposition temperature of 680℃. The hardness was maximum at the surface and decreased with increasing nitrided depth on B-N GCI at 700℃, above the Fe4N decomposition temperature. Hardness of B-N GCI at the layer depth of 10 μm was 1000 Hv, which was lower than that of the B GCI at the same condition. Also the layer thickness was 50 gm; 10 μm deeper than that of B GCI. The reason was that the nitrogen gas given off by the decomposition made the layer porous and facilitated the diffusion of oxygen and other reactants. The samples were oxidated at 800℃ for 48hrs under atmospheric air. Oxidation rate was in decreasing order of N GCI, GCI, B GCI and B-N GCI. Oxidation rates were greatly influenced by the diffusion of nitrogen gas formed by Fe4N decomposition over the decomposition temperature of 680℃ and the oxidation barrier of the less corrosive boride layer. (Received October 29, 2004)

      • Electrochemical properties of Si film electrodes grown on current collectors with CuO nanostructures for thin-film microbatteries.

        Cho, Gyu-Bong,Lee, Won-Rak,Choi, Hyun-Kwang,Kim, Kyeong-Hee,Nam, Tae-Hyun,Kim, Guk-Tae,Noh, Jung-Pil,Kim, Ki-Won American Scientific Publishers 2014 Journal of Nanoscience and Nanotechnology Vol.14 No.12

        <P>Si film electrodes were deposited onto Cu foil current collectors fabricated with well-formed CuO nanostructures. The structural and electrochemical properties of the Cu foils oxidized for 1, 3, and 6 h and of the Si film electrodes were investigated using field-emission scanning electron microscopy, X-ray diffraction (XRD), and charge/discharge tests. The morphologies and XRD profiles suggested that the oxidized Cu foils consisted of a top CuO layer and a bottom Cu2O layer. The surface roughness of the Cu foils decreased with increasing oxidation time since the flower-like CuO nanostructures weakly adhered to the surface were easily detached by ultrasonic cleaning. The cycle performance of the Si film electrode with the rougher CuO layer rapidly deteriorated, whereas the flat Cu2O layer showing a relatively high electric conductivity induced the formation of a dense Si film and improved the electrochemical performance of the Si film electrode.</P>

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