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      • Improving Scanner Data Collection in P4-based SDN

        Yun-Zhan Cai,Chih-Hao Lai,Yu-Ting Wang,Meng-Hsun Tsai 한국통신학회 2020 한국통신학회 APNOMS Vol.2020 No.09

        Port scanning is a well-known behavior when a botnet searches target devices. To detect port scanning accurately, data with high discriminatory power are indispensable. Most related works, however, focus on data analysis methods but neglect storage limitations of switches, which makes their methods impractical. Therefore, we propose a new data collection method for collecting network information of port scanning in P4-based SDN named 0-replacement. Through simulations, we compare the 0-replacement method with two classic data collection methods. Results show that the 0-replacement method improves the true positive ratio by at least 25 percentage points but only consumes 0.36% memory space.

      • KCI등재

        Issues in Simulating Falling Weight Deflectometer Test on Concrete Pavements

        Chen-Ming Kuo,Chih-Chiang Lin,Cheng-Hao Huang,Yi-Cheng Lai 대한토목학회 2016 KSCE JOURNAL OF CIVIL ENGINEERING Vol.20 No.2

        Falling Weight Deflectometer (FWD) produces pavement responses using a falling mass drop. This study investigated the features involved in the finite element modeling of FWD tests to help in the calibration of backcalculation. Falling mass, model size, subgrade damping, and boundary conditions were studied to reveal the significances of these factors on pavement responses. By modeling the falling mass in finite element models, this study has justified the idea that field-measured time history of impact force can be used as an alternative to falling mass. It is also concluded that subgrade damping, self-weight of slab, and boundary conditions are significant in modeling and interpretation of FWD finite element analysis. Finite element model with at least six times radius of relative stiffness is required to simulate dynamic responses of a continuously reinforced concrete slab.

      • KCI등재

        A Study of Optical Properties of InGaAs/GaAs Quantum Dots

        Gwo-Jen Jan,Chih-Ming Lai,Fu-Yu Chang,Hao-Hsing Lin 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III

        The optical properties of InGaAs/GaAs quantum dots (QDs) were investigated by temperature-dependent photoluminescence (PL) and photoreflectance (PR) spectroscopies. The surface morphology and structure analysis of InGaAs QDs were also examined and characterized by a field emission scanning electron microscope (SEM) and an atomic force microscope (AFM). The In$_{0.5}$Ga$_{0.5}$As/GaAs self-assembled QDs specimens were grown with gas-source molecular beam epitaxy and migration enhanced techniques. The area density of the QDs is on an order of magnitude about 1 $\times$ 10$^{10}$ dots/cm$^2$. The measured PL results exhibited 5 major energy peaks, two of which are attributed to InGaAs QDs, one is attributed to the InGaAs wetting layer and the other two are attributed to GaAs band-gap transitions. Two of the low energy features are identified to the optical transitions of the ground state. They were originated from the two kinds of InGaAs QDs which might be formed with slight change of the indium composition. An inverted ``S curve'' shape of the temperature-dependent PL peak energies was observed. This abnormal behavior of the line-shape is attributed to carrier localization. The results of PR measurement which reveal energy features on the high energy side contributed by GaAs is also reported.

      • KCI등재후보

        Characteristics of Reactively Sputtered Niobium Nitride Thin Films as Diffusion Barriers for Cu Metallization

        Cheng-Lin Huang,Chih-Huang Lai,Po-Hao Tsai,Hsing-An Huang,Jing-Cheng Lin,Chiapyng Lee 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.5

        NbN films were prepared by radio frequency reactive magnetron sputtering and then employed as diffusion barriers between Cu and Si. The microstructure of the NbN films was an assembly of very small columnar crystallites with a cubic structure. To investigate the properties as diffusion barriers, we performed metallurgical reactions of Cu/NbN0.8/Si, Cu/Nb/Si and Cu/TaN0.7/Si for comparisons. The sheet resistance increased dramatically after annealing above 750°C for Cu/NbN0.80/Si, and above 500°C for both Cu/Nb/Si and Cu/TaN0.7/Si. The interfaces were deteriorated seriously and formation of Cu3Si was observed when the sheet resistance was significantly increased. The diffusion coefficient of Cu in NbN barrier films was estimated by using the change of resistance (ΔRs/Rs %). Compared with TaN0.7, NbN0.8 films possess larger grain size and lower Cu diffusion coefficient. Our results suggest that the NbN film can be used as a diffusion barrier for Cu metallization as compared to the well-known TaN film.

      • KCI등재

        Thermal Stability, Adhesion and Electrical Studies on (Ti,Zr)Nx Thin Films as Low Resistive Diffusion Barriers between Cu and Si

        Cheng-Lin Huang,Chih-Huang Lai,Po-Hao Tsai,Yu-Lin Kuo,Jing-Cheng Lin,Chiapyng Lee 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.3

        In this study, we investigated the thermal stability, wettability, adhesion and reliability of (Ti,Zr)Nx films used as the diffusion barrier between Cu and Si. (Ti,Zr)Nx films were prepared by DC reactive magnetron sputtering from a Ti-5 at. % Zr alloy target in N2/Ar gas mixtures. A minimum film resistivity of 59.3 μΩ cm was obtained at an N2/Ar flow ratio of 2.75, which corresponds to the near stoichiometric composition (N/(Ti,Zr) ratio ~0.95). The sheet resistance of Cu/(Ti,Zr)N0.95/Si was not significantly increased until annealing above 750°C, indicating good thermal stability. On the other hand, the adhesion energy between Cu and the (Ti,Zr)Nx film was reduced as the N/Ti ratio was increased. To obtain reliable performance on stress-induced-voiding (SIV) and electromigration (EM) tests, we proposed to use (Ti,Zr)/(Ti,Zr)Nx/(Ti,Zr) tri-layers. We suggest that the interfacial adhesion between barrier and Cu plays an important role in reliability. The proposed tri-layer structure may be a promising candidate for a barrier, as it exhibits excellent reliability without increasing resistance.

      • IBM Zigbee Positioning Method for Smart Home Applications

        Ming-Hui Jin,Chung-Jung Fu,Chih-Hao Yu,Hung-Ren Lai,Ming-Whei Feng 보안공학연구지원센터 2008 International Journal of Smart Home Vol.2 No.2

        This paper presents a smart home system prototype which employs an indoor positioning system called the III Beacon Match (I3BM) positioning method to intelligently trigger the appropriately services for the home members. To overcome the ninja problem in the I3BM method, the signal filtering, adjustment and smooth procedures are proposed. The proposed system prototype employs the Zigbee module to implement the prototypes of the components for the I3BM positioning method, and the prototypes had passed the ZigBee Compliant Platform (ZCP) certification test. The proposed system prototype which intelligently controls the air condition and light system for smart home applications is also verifying in our demo room and in the smart house in National Taiwan University.

      • KCI등재

        Effects of nitrogen and carbon doping on properties and photocatalytic activity of TiO2-In2O3 composite

        Chung-Hsin Wu,Chao-Yin Kuo,Jui-Tai Wu,Pui-Kwan Andy Hong,Chih-Hao Lai,Wei-Yang Chung 한국화학공학회 2015 Korean Journal of Chemical Engineering Vol.32 No.5

        TiO2-In2O3 (Ti-In) was synthesized by the sol-gel method and the composite was further doped with nitrogen and carbon to create Ti-In-N and Ti-In-C, respectively. The dye C.I. Reactive Red 2 (RR2) was used a model compound to be subjected to various composites and measured for removal by photocatalytic degradation and adsorption. Ti-In-N possessed a larger mean diameter than Ti-In-C, while the latter possessed a greater anatase content and surface area than the former. After N or C doping, the spectra of corresponding Ti-In-N and Ti-In-C showed absorption edges at longer wavelengths than the parent Ti-In. Ti-N-O and Ti-O-C bonds were found in Ti-In-N and Ti-In-C composites, respectively. Ti-In-N was more effective for RR2 photodegradation than Ti-In-C, and the Ti-In-C removed more RR2 by adsorption than Ti-In-N.

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