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      저자 : Po-Hao Tsai (검색결과 2 건)
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        Characteristics of Reactively Sputtered Niobium Nitride Thin Films as Diffusion Barriers for Cu Metallization

        Cheng-Lin Huang,Chih-Huang Lai,Po-Hao Tsai,Hsing-An Huang,Jing-Cheng Lin,Chiapyng Lee 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.5

        NbN films were prepared by radio frequency reactive magnetron sputtering and then employed as diffusion barriers between Cu and Si. The microstructure of the NbN films was an assembly of very small columnar crystallites with a cubic structure. To investigate the properties as diffusion barriers, we performed metallurgical reactions of Cu/NbN0.8/Si, Cu/Nb/Si and Cu/TaN0.7/Si for comparisons. The sheet resistance increased dramatically after annealing above 750°C for Cu/NbN0.80/Si, and above 500°C for both Cu/Nb/Si and Cu/TaN0.7/Si. The interfaces were deteriorated seriously and formation of Cu3Si was observed when the sheet resistance was significantly increased. The diffusion coefficient of Cu in NbN barrier films was estimated by using the change of resistance (ΔRs/Rs %). Compared with TaN0.7, NbN0.8 films possess larger grain size and lower Cu diffusion coefficient. Our results suggest that the NbN film can be used as a diffusion barrier for Cu metallization as compared to the well-known TaN film.

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        Thermal Stability, Adhesion and Electrical Studies on (Ti,Zr)Nx Thin Films as Low Resistive Diffusion Barriers between Cu and Si

        Cheng-Lin Huang,Chih-Huang Lai,Po-Hao Tsai,Yu-Lin Kuo,Jing-Cheng Lin,Chiapyng Lee 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.3

        In this study, we investigated the thermal stability, wettability, adhesion and reliability of (Ti,Zr)Nx films used as the diffusion barrier between Cu and Si. (Ti,Zr)Nx films were prepared by DC reactive magnetron sputtering from a Ti-5 at. % Zr alloy target in N2/Ar gas mixtures. A minimum film resistivity of 59.3 μΩ cm was obtained at an N2/Ar flow ratio of 2.75, which corresponds to the near stoichiometric composition (N/(Ti,Zr) ratio ~0.95). The sheet resistance of Cu/(Ti,Zr)N0.95/Si was not significantly increased until annealing above 750°C, indicating good thermal stability. On the other hand, the adhesion energy between Cu and the (Ti,Zr)Nx film was reduced as the N/Ti ratio was increased. To obtain reliable performance on stress-induced-voiding (SIV) and electromigration (EM) tests, we proposed to use (Ti,Zr)/(Ti,Zr)Nx/(Ti,Zr) tri-layers. We suggest that the interfacial adhesion between barrier and Cu plays an important role in reliability. The proposed tri-layer structure may be a promising candidate for a barrier, as it exhibits excellent reliability without increasing resistance.

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