http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
백지영,한원석,이순원,Baek, Ji Yeong,Han, Won Seok,Lee, Sun Won 대한화학회 2002 대한화학회지 Vol.46 No.5
trans-[FeHCl$(dppe)_2$](1)과 KSeCN의 반응으로부터 trans-[FeH(NCSe)$(dppe)_2$](2)가 합성되었다. 화합물 2-$CH_2Cl_2$의 구조가 X-ray회절법으로 규명되었다. 화합물 2 내에서 수소 리간드가 M-H${\cdots}$H-C유형의 이수소 (dihydro gen) 결합에 참여하고 있다. Reaction of $trans-[FeHCl(dppe)_2]$ (1) with KSeCN led to the formation of $trans-[FeH(NCSe)(dppe)_2](2).$ Compound 2 $·CH_2Cl_2$ was structurally characterized by X-ray diffraction, in which the hydride ligand appears to be involved in the dihydrogen bonding of the type M-H${\cdot}$${\cdot}$${\cdot}$H-C.
저압 MOCVD 방법으로 성장된 InAlAs 에피층에서 상분리와 규칙 현상의 관찰
조형균,이번,백종협,한원석,이정용,권명석,Cho, Hyung-Koun,Lee, Bun,Baek, Jong-hyeob,Han, Won-Seok,Lee, Jeong-Yong,Kwon, Myoung-Seok 한국진공학회 1999 Applied Science and Convergence Technology Vol.8 No.3(2)
We have studied the phase separation and ordering phenomeon of InAlAs epilayers grown on InP substrate by LP-MOCVD with DCXRD, PL, and TEM. From the intensity and FWHM of DCXRD and PL, we observed that the structural and optical quality of InAlAs epilayers were improved as growth temperature increased. The band-gap reduction due to phase separation and ordering is 291, 246, and 28 meV in the InAlAs epilayers grown at $565^{\circ}C$, $615^{\circ}C$, and $700^{\circ}C$, respectively, and shows the same from the InAlAs epilayer town at 5$65^{\circ}C$ in which the HRTEM micrograph showed the lattice fringe between InAs-rich and AlAs-rich regions was tilted by $2^{\circ}$ due to composition difference. However the maximum degree of ordering by intensity of extra spots was obtained at medium growth temperature. The annealing experiment by RTA of sample grown at $565^{\circ}$ shows a maximum band-gap shift of 78eV at $880^{\circ}$ for 3 min, and TEM shows that the origin of the blue shift of band-gap is the complete disappearance of ordering. Through annealing we can conclude that short time annealing affects only ordering and that most of the total band-gap reduction (~3/4) occurs by phase separation.