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나노임프린트 리소그래피를 위한 스케일 다운된 산화막 스탬프 제작과 패턴결함 개선에 관한 연구
박형석,최우범,성만영,Park, Hyung-Seok,Choi, Woo-Beom,Sung, Man-Young 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.2
We have investigated pattern scaling down of silicon stamps through the oxidation technique, During oxidizing the silicon stamps, silicon dioxide that has 300 nm and 500 nm thickness was grown, and critical deformations were not observed in the patterns. There was positive effect to reduce size of patterns because vertical and horizontal patterns have different orientation. We achieved pattern reduction rate of $26\%$. In addition, the formation of polymer patterns had been investigated with varied temperature and pressure conditions to improve the filling characteristics of polymers during nanoimprint lithography when pattern sizes were few micrometers. In these varied conditions, polymers had been affected by free space compensation and elastic stress relaxation for filling the cavities. Based on the results, defect control which is an important issue in the nanoimprint lithography were facilitated.
정지원,주병권,최우범,정성재,이남양,최두진,오명환 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
Silicon-to-silicon anodic bonding was accomplished using lithium doped interlayer. Lithium doped interlayers were deposited on silicon substrates by electron beam evaporation, which has a fast deposition rate compared with sputtering method. Silicon-to-silicon bonding occurs in the range of temperatures from 250℃ to 300℃ with the applied voltages from 70V_(DC) to 100V_(DC). The bonding strength obtained from tensile test was about 5MPa under the condition of 80V_(DC) in 300℃. The surface morphology of lithium doped interlayer was studied with the atomic force microscopy (AFM). Finally, secondary ion mass spectroscopy (SIMS) analysis was carried out in order to investigate the role of the lithium ions in bonding mechanism.
정전 열 접합을 이용한 Multi-Substrate Bonding
이덕중,주병권,최우범,한정인,조경익,이광배,장진,오명환 경북대학교 센서기술연구소 1997 센서技術學術大會論文集 Vol.8 No.1
We performed silicon-to-glass bonding using silicon direct bonding followed by anodic bonding(SDAB). Initial bonding between glass and silicon was caused by the hydrophilic surfaces of silicon and glass ensemble using silicon direct bonding(SDB) method. We found that the bonded specimen using SDAB process had higher strength than one using anodic bonding process only. We performed multiple layer bonding by SDAB, which is glass- silicon -glass as sandwich structure. In the silicon wafer, the (1mm x 2mm x 500μm)-sized cavity was formed by the anisotropic etching of the silicon substrate in EPW(Ethylendiamin-Pyrocatechol-Water). And, the cavity was sealed with glass wafers by SDAB method.
HNO3 : H2O2 : HF 세척법을 이용한 실리콘 직접 접합 기술에 관한 특성 연구
이종석,성만영,최우범,주철민,이정훈 고려대학교 공학기술연구소 1999 공학논문집 Vol.37 No.1
We have studied the method of silicon direct bonding using the mixture of HNO₃, H₂O₂ and HF chemicals called the controlled slight etch (CSE) solution for the effective wafer cleaning. CSE, two combinations of oxidizing and etching agents, have been used to clean the silicon surfaces prior to wafer bonding. Two wafers of silicon and silicon dioxide were contacted each other at room temperature and post-annealed at 300∼1100℃ in N₂ ambient for 2.5 hour. We have cleaned silicon wafers with the various HF concentrations and characterized the parameters with regard to surface roughness, chemical nature, chemical oxide thickness, and bonding energy. It was observed that the chemical oxide thickness of the silicon wafer decreased with increasing HF concentrations. The initial interfacial energy and final energy post-annealed at 1100℃ for 2.5 hour measured by the crack propagation method was 122 mJ/㎡ and 2.96 J/㎡ , respectively.