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中華經濟圈 對頭에 따른 우리나라의 中華資本 誘致政策 樹立에 관한 硏究
장동식(蔣東植) 법무부 국제법무정책과 2003 통상법률 Vol.- No.53
This study deals with the Korean foreign investment policy measures to induce Chinese capital in line with formation of Chinese Economic Community in East Asia. In this paper, Chinese capital is defined as capital including both capital in China and Chinese capital from the Chinese society in East Asia. Three policy measures that help induce Chinese capital are proposed as follows. First, the inducement policy of Chinese capital must link with economic policies to develop korea into an economic hub in northeast Asia. Second, Korea must establish the national office for foreign investment, thus helping induce Chinese capital. Third, Korea must host capital from Chinese Economic community in East Asia into financial industry, IT industry, hotel and tourism industry. An important implication in this paper is that economic cooperation with Chinese Economic Community will be successfully established with inducement of Chinese capital into korea.
In-Situ Monitoring of Multiple Oxide/Nitride Dielectric Stack PECVD Deposition Process
장동범,홍상진 한국전기전자재료학회 2018 Transactions on Electrical and Electronic Material Vol.19 No.1
An in situ monitoring the plasma-enhanced chemical vapor deposition (PECVD) of dielectric materials is proposed in thispaper. The in situ monitoring of plasma process has become a crucial tool for reducing wafer scrap due to processing, andthe use of non-invasive monitoring methods is a key requirement in the semiconductor industry. In addition to optical emissionspectroscopy, we propose an electrical measurement technique using newly designed RF signal monitoring sensors thatacquire the magnitude and phase of current and voltage from both RF generators and PECVD susceptor. As a test vehicle,the use of multiple oxide/nitride layer deposition process during 3D-NAND fl ash device fabrication was adopted as a testapproach. We assume that the chamber impedance changes during deposition cycles owing to the thickness of fi lms depositedon the wafer and chamber wall, and that it can be observed from a diff erence in the RF magnitude or phase of the generatorand susceptor antennas. Our preliminary fi nding shows that the voltage phase is correlated over repeated deposition cycles,and is related to the condition of the chamber and the deposited fi lm thickness. The voltage is loosely correlated with themeasured RF voltage factor during repeated deposition cycles, showing that our hypothesis that the chamber impedancechanges during deposition is valid. This fi nding enables subsequent investigation of the impact of the thickness of depositedfi lms in cyclic PECVD processes during three-dimensional NAND memory fabrication.