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윤혜련,조윤이,이승윤 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.2
This work reports on the fabrication of colored and translucent chalcogenide-oxide nanocomposite films, and their optical properties for use in transparent photoelectric device applications. Spin coating method from ZrO 2 colloid solutions was used to deposit ZrO 2 nanoparticle layers on substrates. GeTe chalcogenide thin films were subsequently deposited by rf sputtering, and were postannealed to form nanocomposite films. Color variation was achieved by the application of the nanocomposite films to glass substrates, which implies that the nanocomposite films can be applied to transparent photoelectric devices to improve aesthetic appearance by adjusting colors.
금속나노입자-유전체 이층 구조 구현을 위한 반투명 Cu 나노입자층 형성에 관한 연구
윤혜련,조윤이,윤회진,이승윤,Yoon, Hye Ryeon,Jo, Yoon Ee,Yoon, Hoi Jin,Lee, Seung-Yun 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.6
This study reports the fabrication and application of semitransparent Cu nanoparticle layers. Spin coating and subsequent drying of a Cu colloid solution were performed to deposit Cu nanoparticle layers onto Si and glass substrates. As the spin speed of the spin coating increases, the density of the nanoparticles on the substrate decreases, and the agglomeration of nanoparticles is suppressed. This microstructural variation affects the optical properties of the nanoparticle layers. The transmittance and reflectance of the Cu nanoparticle layers increase with increasing spin speed, which results from the trade-off between the exposed substrate area and surface coverage of the Cu nanoparticles. Since the glass substrates coated with Cu nanoparticle layers are semitransparent and colored, it is anticipated that the application of a Cu nanoparticle-dielectric bilayer structure to transparent solar cells will improve the cell efficiency as well as aesthetic appearance.
자기정렬구조를 갖는 칼코겐화물 상변화 메모리 소자의 전기적 특성 및 온도 분포
윤혜련,박영삼,이승윤 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.6
This work reports the electrical characteristics of and temperature distribution in chalcogenide phase change memory (PCM) devices that have a self-aligned structure. GST (Ge-Sb-Te) chalcogenide alloy films were formed in a self-aligned manner by interdiffusion between sputter-deposited Ge and Sb2Te3 films during thermal annealing. A transmission electron microscopy-energy dispersive X-ray spectroscopy (TEM-EDS) analysis demonstrated that the local composition of the GST alloy differed significantly and that a Ge2Sb2Te5 intermediate layer was formed near the Ge/Sb2Te3 interface. The programming current and threshold switching voltage of the PCM device were much smaller than those of a control device; this implies that a phase transition occurred only in the Ge2Sb2Te5 intermediate layer and not in the entire thickness of the GST alloy. It was confirmed by computer simulation, that the localized phase transition and heat loss suppression of the GST alloy promoted a temperature rise in the PCM device. 자기정렬구조를 갖는 칼코겐화물 상변화 메모리 소자의 전기적 특성과 온도 분포를 보고한다. 열처리 시 발생하는 Ge와 Sb2Te3 사이의 상호확산을 이용하여 자기정렬방식으로 GST (Ge-Sb-Te) 칼코겐화물 합금 박막을 형성하였다. TEM-EDS 분석으로 GST 합금의 조성이 소자 내의 위치에 따라 다르고 Ge/Sb2Te3 계면 근방에서 Ge2Sb2Te5 칼코겐화물 중간층이 형성된 것을 관찰하였다. 자기정렬방식으로 제작된 소자는 일반적인 소자에 비해 reset 프로그래밍 전류와 문턱 스위칭 전압이 큰 폭으로 감소하였으며, 이러한 현상은 전체 GST 합금 영영 중에서 Ge2Sb2Te5 중간층에서만 상변화가 진행되어 나타나는 것이다. 온도 분포 시뮬레이션을 실시하여 칼코겐화물 합금의 국부적인 상변화 및 열손실 차단으로 인해 상변화 메모리 소자의 온도 상승이 촉진됨을 확인하였다.