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스퍼터링법에 의한 ZnO 투명전도막의 제작과 전기적 특성
유용택,조재철,정운조,정용근 한국센서학회 1997 센서학회지 Vol.6 No.1
ZnO thin film had been deposited the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was 1 x 10^(-3) Torr at room temperature, thin film deposited had strongly oriented c-axis and the lowest resistivity(1 x 10^(-4)Ω·cm), and then carrier concentration and Hall mobility were 6.27x10^(20) cm^(-3) and 22.04㎠/V·s, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut off the ultraviolet range below 330nm and the infrared and range above 850nm. And after annealing in hydrogen ate, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.
GIS를 활용한 도시공공시설의 접근성 및 공간적 효율성 분석 - 용산구청 청사이전 사례를 중심으로
유용택,백성준 한국도시부동산학회(구 도시정책학회) 2013 도시부동산연구 Vol.4 No.1
This study is aimed to analyze whether the movement of targeted urban public facility could contribute to the improvement of facility users' convenience in terms of accessibility. To measure the accessibility, the total travel distance was estimated through multiplying network distance by the number of users as weights. Consequently the spatial efficiency was estimated. To calculate the network distance, the shortest distance was selected using GIS. On the other hand, highly frequented transit route in case of using public transportation was considered as the shortest distance. According to analytical results, the necessity of location and its systematization, in view of the accessibility of facility users, was meaningful in case of Yongsan-gu. Moreover, there was the difference between the accessibility of the shortest distance and that of public transportation, which was calculated based on GIS. The accessibility of public transportation is closer to spatial efficiency and equity. In conclusion, this study suggests the accessibility of public transportation be considered to judge the spatial efficiency of urban public facilities.
조제철,유용택 한국전기전자재료학회 1995 電氣電子材料學會誌 Vol.8 No.6
Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.
윤재강,유용택 대한전자공학회 1975 전자공학회지 Vol.12 No.6
Hall효과의 이용으로, 자계의 세기 또는 자속을 계측할 수 있는 자속계의 제조 및 특성조사를 시도하였다. Hall계수가 큰 InSb의 단결품을 Bridgemann법에 의하여 제작하고, 자장내에서 자계의 세기와 기전력 또는 전류를 계측한 결과, 만족할만한 감도와 직선적인 특성곡선을 얻었으며, 유사한 연구결과와 비교할때, 좋은 결과임을 알게 되었다. An Insb magnetic fluxmeter was made of InSb Single Crystal that was grown by Bridgemannmethods and then purified by vapor cone refining method. We investigated some properties of the InSb magneto fluxmeter. It was found that the resistivity and the Hall Coefficient of this single Crystal Were 4.4X10-2Ω and 4.5cm3/Coul, respectively, at room temperature. The Characteristic Curve of the InSb magnetic fluxmeter between the magnetic field the Hall voltage, with the Current flowing through the element a Parameter, had good lineanty i.e., We obtained a linear Calibration Curve of the flwmeter. The fluxmeter erved the purpose well enough up to 5 k-gaus. An Insb magnetic fluxmeter was made of InSb Single Crystal that was grown by Bridgemannmethods and then purified by vapor cone refining method. We investigated some properties of the InSb magneto fluxmeter. It was found that the resistivity and the Hall Coefficient of this single Crystal Were 4.4${\times}10^{-2}{\Omega}$ and $4.5\textrm{cm}^3$/Coul, respectively, at room temperature. The Characteristic Curve of the InSb magnetic fluxmeter between the magnetic field the Hall voltage, with the Current flowing through the element a Parameter, had good lineanty i.e., We obtained a linear Calibration Curve of the flwmeter. The fluxmeter erved the purpose well enough up to 5 k-gaus.
Reaction Sintering 에 의한 ZnO:Al2O3 합성물의 구조 및 광학적 특성
박계춘,유용택,강병모 한국센서학회 1998 센서학회지 Vol.7 No.3
ZnO and Al₂O₃ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at 900 ℃ ∼ 1200 ℃ for 3 h in vacuum(3 X 10^(-5) Torr). According to XRD, remnant ZnO and Al₂O₃ not converted to ZnAl₂O₄ were observed up to 1100℃, which were completely changed to ZnAl₂O₄ ternary compound at 1200. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at 1200 ℃.