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Si 기판에 제작된 AAO 박막의 기공 형성 최적화에 관한 연구
권순일,양계준,송우창,이재형,임동건,Kwon, Soon-Il,Yang, Kea-Joon,Song, Woo-Chang,Lee, Jae-Hyeong,Lim, Dong-Gun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.5
AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.
SF<sub>6</sub>, C<sub>4</sub>F<sub>8</sub>, O<sub>2</sub> 가스 변화에 따른 실리콘 식각율과 식각 형태 개선
권순일,양계준,송우창,임동건,Kwon, Soon-Il,Yang, Kea-Joon,Song, Woo-Chang,Lim, Dong-Gun 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.
태양전지용 CdS 박막의 구조적, 광학적 물성에 미치는 스퍼터 전력 효과
이재형,임동건,양계준,Lee, Jae-Hyeong,Lim, Dong-Gun,Yang, Kea-Joon 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.4
CdS films have been prepared on polycarbonate, polyethylene terephthalate, and Coming 7059 substrates by r.f magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the influence of the sputter power on the structural and optical properties of these films was evaluated. The XRD measurements revealed that CdS films were polycrystalline and retained the mixed structure of hexagonal wurtzite and cubic phase, regardless of substrate types. As the sputter power was increased from 75 to 150 Watt, the structure of CdS films was converted from the mixed of hexagonal and cubic phase to hexagonal phase. The morphology of CdS films is found to be continuous and dense. Also, the grain of CdS films is larger with increasing the sputter power. The average transmittance exceeded 80 % in the visible spectrum for all films and decreases slightly with the sputter power.
임종엽,이용구,박종범,김민영,양계준,임동건,Lim, Jong-Youb,Lee, Yong-Koo,Park, Jong-Bum,Kim, Min-Young,Yang, Kea-Joon,Lim, Dong-Gun 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.9
$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.
급속열처리를 통한 알루미나 나노 템플레이트의 기공 균일도 개선에 관한 연구
김동희,김진광,권오대,양계준,이재형,임동건,Kim Dong-Hee,Kim Jin-Kwang,Kwon O-Dae,Yang Kea-Joon,Lee Jae-Heong,Lim Dong-Gun 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.2
Ordered nanostructure materials have received attention due to their unique physical properties and potential applications in electronics, mechanics and optical devices. To actualize most of the proposed applications, it is quite important to obtain highly ordered nanostructure arrays. The well-aligned nanostructure can be achieved by synthesizing nanostructure material in the highly ordered template. To get well-aligned pore array and reduce process time, rapid thermal anneal by an IR lamp was employed in vacuum state at $500^{\circ}C$ for 2 hour. The pore array is comparable to a template annealed in vacuum furnace at $500^{\circ}C$ for 30 hours. The well-fabricated AAO template has the mean pore diameter of 70 nm, the barrier layer thickness of 25 nm, the pore depth of $9{\mu}m$, and the pore density of higher than $1.2{\times}10^{10}cm^{-2}$.
태양전지 응용을 위한 PC 기판상의 ZnO:Al 박막 특성에 관한 연구
나영일,이재형,임동건,양계준,Na, Young-il,Lee, Jae-Heong,Lim, Dong-Gun,Yang, Kea-Joon 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.2
Al doped ZnO thin films (ZnO:Al) were deposited on poly carbonate (PC) substrate by rf magnetron sputtering. In addition, the electrical, optical properties of the films prepared at various conditions were investigated. As the sputter power increased, the resistivity of ZnO:Al films decreased, regardless of substrate types. However, the resistivity of the films increased with the sputter pressure. The ZnO:Al films were increasingly dark gray colored as the sputter power increased, resulting in the loss of transmittance. High quality films with resistivity as low as 1.43${\times}$10$^{-4}$ Ω-cm and transmittance over 80 % have been obtained by suitably controlling the deposition parameters.
ZnO:Al 박막의 전기적, 광학적 특성에 미치는 바이어스 전압효과
나영일,이재형,임동건,양계준,Na, Young-il,Lee, Jae-Hyeong,Lim, Dong-Gun,Yang, Kea-Joon 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.6
Al doped Zinc Oxide, which is widely used as a transparent conductor in opto-electronic devices. In this paper, we find that the lateral variations of the parameters of the ZnO:Al films prepared by the rf magnetron sputtering can be reduced to acceptable levels by optimising the deposition parameters. The effect of bias voltage on the electrical, optical and morphological properties were investigated experimentally. we investigated sample properties of Bias Voltage change in 0 to 50 V.
Sol-gel 법에 의한 Co - Zn Ferrite 박막의 제조와 자기 특성에 관한 연구
이승화(Seung Wha Lee),양계준(Kea Joon Yang),류연국(Yeon Guk Ryu),안성용(Sung Yong An),김철성(Chul Sung Kim) 한국자기학회 2001 韓國磁氣學會誌 Vol.11 No.4
Co-Zn ferrite thin films grown on thermally oxidized silicon wafers were fabricated by a sol-gel method. Magnetic and structural properties of Co-Zn thin films were investigated by using x-ray diffractometer (XRD), atomic force microscopy (AFM), auger electron spectroscopy (AES) and a vibrating sample magnetometer (VSM). Co-Zn ferrite thin films annealed at 400 ℃ presented have only a single phase spinel structure without any preferred crystallite orientation. Their surface roughness of Co-Zn ferrite thin films was shown as less than 3 ㎚ and the grain size was about 40 ㎚ for annealing temperatures over 600 ℃. A moderate saturation magnetization of Co-Zn ferrite thin films for recording media was obtained in this study and there is no significant difference of their magnetic property with those external fields of parallel and perpendicular to planes of the films. The maximum value of the coercivity was obtained as 1,900 Oe for Co-Zn ferrite thin film annealed at 600 ℃.
ICP-RIE 방법에 의한 Si 식각 특성 개선에 관한 연구
강교성(Gyo-Sung Kang),권순일(Soon-Il Kwon),양계준(Kea-Joon Yang),김홍오(Hong-O Kim),임동건(Dong-Gun Lim) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
In this paper, deep trench etching of silicon was investigated as a function of source power (300~600 W), DC bias voltage (0~-100 V), O2 addition (0~29%). As increasing the RF source power from 300 W to 700 W, the etch rate was increased from 3.52 ㎛/min to 7.07 ㎛/min. The addition of O₂ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the O₂ gas addition of 12%. The selectivity to PR was 65.75 with O₂ gas addition of 24%. At DC bias voltage of -40 V and C₄F? gas flow rate of 30 seem, We were able to achieve etch rate as high as 5.25 ㎛/min with good etch profile.