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고정패턴잡음 제거를 위한 적외선 이미지 센서용 CMOS 검출회로 설계에 관한 연구
신호현(Ho Hyun Shin),황상준(Sang Jun Hwang),유승우(Seung Woo Yu),성만영(Man Young Sung) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
적외선 이미지 센서용으로 사용되는 마이크로 볼로미터 센서는 process variation으로 인하여 모든 볼로미터 센서의 셀이 정확한 저항값을 갖지 못하여 입력신호에 왜곡을 가져 온다. 본 논문에서는 적외선 이미지 센서용 CMOS 검출회로를 설계하는 데 있어, 이러한 볼로미터 셀 어레이의 고정패턴잡음(Fixed Pattern Noise)을 최소화하는 방법에 대해 연구하였다. 기존의 단일 입력 방식 검출회로는 볼로미터 셀어레이의 고정패턴잡음을 보정하기 위하여 추가적인 보정 회로를 필요로 하였다. 이러한 문제점을 해결하기 위해서 본 논문에서는 차동 입력 방식 검출회로를 제안하였으며, 이를 적용하여 출력을 살펴본 결과 추가적인 보정회로 없이 20%의 노이즈 감쇠효과를 얻을 수 있다. 연구 결과를 바탕으로 32×32 크기를 갖는 셀어레이의 불로미터를 구성하여 전체 칩을 설계하였으며 컴퓨터 시뮬레이션을 통해 결과를 분석하였다.
트렌치 게이트 IGBT 에서의 공정 및 설계 파라미터에 따른 항복 전압 특성에 관한 연구
신호현,이한신,성만영,Shin, Ho-Hyun,Lee, Han-Sin,Sung, Man-Young 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.5
In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.
열 나노임프린트 리소그래피를 위한 패턴의 결함 향상에 관한 실험적 연구
朴亨錫(Hyung Seok Park),辛昊炫(Ho Hyun Shin),徐詳源(Sang Won Seo),成萬永(Man Young Sung) 대한전기학회 2006 전기학회논문지C Vol.55 No.5
The reliability of imprint patterns molded by stamps for industrial application of nanoimprint lithography (NIL), is an important issue. Usually, defects can be produced by incomplete filling of negative patterns and the shrinkage phenomenon of polymers in conventional NIL. In this paper, the patterns that undergo a varied temperature or varied pressure period during the thermal NIL process have been investigated, with the goal of resolving the shrinkage and defective filling problems of polymers. The effects on the formation of polymer patterns in several profiles of imprint processes are also studied. Consequently, it is observed that more precise patterns are formed by the varied temperature (VT-Nll) or varied pressure (VP-NIL). The NIL (VT-NIL or VP-NIL) process has a free space compensation effect on the polymers in stamp cavities. From the results of the experiments, the polymer's filling capability can be improved. The VT-NIL is merged with the VP-NIL for the better filling property. The patterns that have been imprinted in the merged NIL are compared with the results of conventional NIL. In this study, the improvement in the reliability for results of thermal NIL has been achieved.
600V급 트렌치 게이트 LDMOSFET의 전기적 특성에 대한 연구
이한신(Han Sin Lee),강이구(Ey Goo Kang),신아람(Aram Shin),신호현(Ho Hyun Shin),성만영(Man Young Sung) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
본 논문에서는 기존의 250V급 트렌치 전극형 파워 MOSFET을 구조적으로 개선하여, 600V 이상의 순방향 항복 전압을 갖는 파워 MOSFET을 설계 하였다. 본 논문에서 제안한 구조로 기존의 250V급 트렌치 전극형 파워 MOSFET에 비하여 더욱 높은 순방향 항복 전압을 얻었다. 또한, 기존의 LDMOS 구조로 500V 이상의 항복 전압을 얻기 위해서 100㎛ 이상의 크기를 필요로 했던 반면에, 본 논문에서 제안한 소자의 크기 (vertical 크기)는 50㎛로서, 소자의 소형화 및 고효율화 측연에서 더욱 우수한 특성을 얻었다. 본 논문은 2-D 공정시뮬레이터 및 소자 시뮬레이터를 바탕으로, 트렌치 옥사이드의 두께 및 폭, 에피층의 두께 변화 등의 설계변수와 이온주입 도즈 및 열처리 시간에 따른 공정변수에 대한 시뮬레이션을 수행하여, 본 논문에서 제안한 구조가 타당함을 입증하였다.
윤경식,조규용,김형일,김태영,조경기,신호,강삼석,우정현 대한신경외과학회 1990 Journal of Korean neurosurgical society Vol.19 No.7
The authors analized statistically 635 cases of pathologically confirmed central nervous system tumors in the Chonnam and Chonbuk provinces from 1987 to 1989. The results were as follows : 1) Of the 635 cases, 327 cases(51.5%) were male and 308 cases(48.5%) were female. 2) Intracranial tumors were 518 cases(81.6%), spine and intraspinal tumors 94(14.8%), scalp and skull tumors 23(3.6%). 3) Average incidence rate of tumors was 3.5/year/100,000 population, 3.1 for Chonnam province, 4.4 for Chonbuk province. 4) Among the brain tumors, glial tumors were the most common(28.4%), and followed by meningiomas(18%), pituitary tumors(15.2%), metastatic tumors(8.9%), Among the intraspinal tumors, neurinomas and neurofibromas were found most frequently(41.5%), and rests were metastatic tumors(23.4%), meningiomas(9.5%) in order. 5) Sexual predilection of tumors was as follows : male preponderance was noted for oligodendrogliomas(9: 1), metastatic tumors(2.3:1), glioblastomas multiforme(GM)(1.8:1) cysticercoses(1.6:1), and female preponderance for meningiomas(1:3.2), pituitary tumors(1:2), paragonimiases(1:1.5). 6) The incidence rate of brain tumors in children below 15 years was 11.8% and that which occurred infratentorially was 47.5%. 7) The brain tumors were found mainly in cerebral hemispheres, in which area most of tumors were meningiomas, astrocytomas in order. In sellar, parasellar most of tumors were meningiomas, astrocytomas in order. In sellar, parasellar and suprasellar region, the majority of tumors were pituitary tumors and meningiomas. 8) Cysticercoses showed a predilection for the sixth and seventh decades, meningiomas, metastatic tumors, neurinomas for sixth decade, GM and supratentorial astrocytomas for fourth, fifth and sixth decades, oligodendroliomas for fifth decade, infratentorial astrocytomas, medulloblastomas and craniopharyngiomas for first and second decades. 9) In the spinal tumors, the favorable site was thoracic region and majority of them were located intradural extramedullarily and extradurally in similar incidence.