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정석훈,서헌덕,박범영,박재홍,박성민,정문기,정해도,김형재,Jeong, Sukhoon,Seo, Heondeok,Park, Boumyoung,Park, Jaehong,Park, Seungmin,Jeong, Moonki,Jeong, Haedo,Kim, Hyoungjae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.
정석훈,서헌덕,박범영,박재홍,정해도,Jeong, Suk-Hoon,Seo, Heon-Deok,Park, Boum-Young,Park, Jae-Hong,Jeong, Hae-Do 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.3
Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.
이현섭,박범영,서헌덕,박기현,정해도,Lee, Hyunseop,Park, Boumyoung,Seo, Heondeok,Park, Kihyun,Jeong, Haedo 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.4
Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.
CMP시 SiO<sub>2</sub> 슬러리의 마찰 특성과 연마결과에 관한 연구
이현섭,박범영,서헌덕,정재우,정석훈,정해도,Lee Hyunseop,Park Boumyoung,Seo Heondeok,Jung Jaewoo,Jeong Sukhoon,Jeong Haedo 대한기계학회 2005 大韓機械學會論文集A Vol.29 No.7
The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.
박범영,이현섭,김형재,서헌덕,김구연,정해도,Park, Boumyoung,Lee, Hyunseop,Kim, Hyoungjae,Seo, Heondeok,Kim, Gooyoun,Jeong, Haedo 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.10
Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.
조성환,김형재,김호윤,서헌덕,김경준,정해도,Cho, Sung-Hwan,Kim, Hyoung-Jae,Kim, Ho-Youn,Kim, Heon-Deok,Seo, Kyoung-Jun,Jeong, Hae-Do 대한기계학회 2001 大韓機械學會論文集A Vol.25 No.10
This study presents the possibility of scratch reduction on wafer in CMP by applying the ultrasonic and megasonic energy into the slurry which might contain large abrasive particles. Experiments were conducted to verify the dispersion ability of agglomerated particles by applying ultrasonic, megasonic waves and analyze the particle distribution of used slurry in case, of sonic energy assisted or none. And the dispersion stability of megasonic waves was investigated through the experiment of stability of the dispersed slurry, Finally, to confirm that the distribution of particles in slurry by ultrasonic waves was actually related to scratches on wafer when CMP was done, tungsten blanket wafer was processed, by CMP to compare and investigate scratches on wafer.