$CH_{3}CN$ 감지를 위한 $SnO_{2}/Al_{2}O_{3}/Pd$ 후막소자의 제조 및 그 특성

박효덕,조성국,손종락,이덕동,Park, Hyo-Derk,Jo, Sung-Guk,Sohn, Jong-Rack,Lee, Duk-Dong 한국센서학회 1992 센서학회지 Vol.29 No.3

The optimum base material was selected by the thermal decomposition temperature of $CH_{3}CN$ on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of $SnO_{2}$, $CH_{3}CN$ was initiated to decompose at $130^{\circ}C$ and produced a lot of products at $200^{\circ}C$. The products from the reaction were found to be $H_{2}O$, $NH_{3}$ and CO, but $N_{2}O$ has started to produce at $320^{\circ}C$. The sensing characteristics of $SnO_{2}$ sensor to $CH_{3}CN$ are influenced by the absorbed species which are produced by the oxidation reaction of $CH_{3}CN$ on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, $NH_{3}$, $H_{2}O$ and $NO_{x}$ etc.. It was assumed that the amount of $NO_{x}$ play a great role to the determining sensing properties. In the condition of 170 ppm $CH_{3}CN$, the sensitivity and optimum operating temperature of $SnO_{2}$ were 70% and $300^{\circ}C$, respectively. In this research, the response time of $CH_{3}CN$ to $SnO_{2}/Al_{2}O_{3}/Pd$ sensor added with 0.2 wt % Pd was found about 10 sec and sensitivity was also found relatively high. $CH_{3}CN$ 감지를 위한 최적 모물질은 $CH_{3}CN$의 억분해 온도와 생성량을 적외선 흡수 스펙트럼으로부터 비교함으로써 선정되었다. $SnO_{2}$ 표면에서 $CH_{3}CN$은 $130^{\circ}C$에서부터 열분해되기 시작하여 $300^{\circ}C$에서는 많은 양의 생성물을 생성하였다. 산화반응에 의한 $CH_{3}CN$은 $CO_{2}$, $NH_{3}$ 및 $H_{2}O$로 열분해되었으며, $320^{\circ}C$에서부터 $N_{2}O$가 생성되기 시작하였다. $SnO_{2}$ 감지소자의 $CH_{3}CN$에 대한 감지특성은 $CH_{3}CN$과 금속산화물과의 산화반응으로 인해 생성된 흡착종에 의해 영향을 받았다. 감지물질표면과의 반응에서 생성된 흡착종은 CO, $NH_{3}$, $H_{2}O$ 및 $NO_{x}$ 등이었다. $NO_{x}$의 생성량은 감지특성에 큰 영향을 나타냄을 알 수 있다. 170 ppm의 $CH_{3}CN$에 대한 $SnO_{2}$의 감도와 동작온도는 각각 70% 정도와 $300^{\circ}C$이었다. 0.2wt% Pd 첨가된 $SnO_{2}/Al_{2}O_{3}/Pd$ 감지소자는 $CH_{3}CN$에 대해 높은 감도를 나타내었으며, 응답시간은 약 10초이었다.

CH3CN 감지를 위한 SnO2/Al2O3/Pd 후막소자의 제조 및 그 특성

박효덕,조성국,손종락,이덕동 ( Hyo Derk Park,Sung Guk Jo,Jong Rack Sohn,Duk Dong Lee ) 한국센서학회 1992 센서학회지 Vol.1 No.1

The optimum base material was selected by the thermal decomposition temperature of CH₃CN on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of SnO₂, CH₃CN was initiated to decompose at 130℃ and produced a lot of products at 200℃. The products from the reaction were found to be H₂O, NIA, and CO, but N₂O has started to produce at 320℃. The sensing characteristics of SnO₂ sensor to CH,CN are influenced by the absorbed species which are produced by the oxidation reaction of CH₃CN on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, NH₃, H₂O and NO, etc.. It was assumed that the amount of N0, play a great role to the determining sensing properties. In the condition of 170 ppm CH₃CN, the sensitivity and optimum operating temperature of SnO₂ were 70% and 300℃, respectively. In this research, the response time of CH₃CN to SnO₂/Al₂O₃/Pd sensor added with 0.2 wt% Pd was found about 10 sec and sensitivity was also found relatively high.

Tetraethylorthosilicate 용액을 침적시킨 SnO2 후막형 가스감지소자의 아세토니트릴에 대한 선택성

박효덕,조성국,손종락,이덕동 ( Hyo Derk Park,Sung Guk Cho,Jong Rack Sohn,Duk Dong Lee ) 한국센서학회 1993 센서학회지 Vol.2 No.2

The SnO/A1z03/Nbzos thick film devices added with SiO₂ were fabricated by means of the dipping into Si(CzHso)a solution and the sensing characteristics of the thick film devices to CH₃CN vapor was investigated The reaction products of CH₃CN by the heating reaction on the thick film devices were analyzed by the FT-IR method using gas reaction cell. The products of CH₃CN vapor by the surface reaction on the thick film devices were CO₂, H₂O, N₂O and the acids produced from NO_x and H₂O. Optimum processes of the thick film devices were determined by the investigation of the sensing characteristics to CH₃CN vapor. The thick film devices showed high selectivity to CH₃CN vapor and negative sensitivity by oxidizing agents (NO_x) produced during the reaction of CH₃CN vapor on the thick films.

loT 시대에서의 스마트센서 기술

박효덕(Hyo-Derk Park) 대한기계학회 2016 대한기계학회 춘추학술대회 Vol.2016 No.5

열산화법으로 형성한 Pt-SnO2-x 박막소자의 CO 가스 감지특성

심창현,박효덕,이재현,이덕동 ( Chang Hyun Shim,Hyo Derk Park,Jae Hyun Lee,Duk Dong Lee ) 한국센서학회 1992 센서학회지 Vol.1 No.1

Pt-SnO(2-x) thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was 4000 Å and the thickness of Pt deposited by D.C. sputtering on 5n thin film was 14∼71 Å range. The XRD analysis show that the Pt-SnO(2-x) thin films are` formed by grains with a diameter of about 200 Å randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. Pt-SnO_(2-x) thin film device (Pt thickness : 43 Å) to 6000 ppm CO shows the sensitivity of 80 % and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of Pt-SnO_(2-x) thin film device with high sensitivity to CO were 200℃ and 500℃, respectively.

열산화법으로 형성한 $Pt-SnO_{2-x}$ 박막소자의 CO 가스 감지특성

심창현,박효덕,이재현,이덕동,Shim, Chang-Hyun,Park, Hyo-Derk,Lee, Jae-Hyun,Lee, Duk-Dong 한국센서학회 1992 센서학회지 Vol.29 No.3

적층구조의 Pt-Sn 박막을 히터 위에서 열산화하여 $Pt-SnO_{2-x}$ 박막형 CO 가스감지소자를 제조하였다. 열증착법으로 증착된 Sn의 두께는 $4000{\AA}$이었으며 그 위에 D.C. sputtering법으로 증착된 Pt의 두께는 $14{\AA}{\sim}71{\AA}$ 이었다. XRD 분석에서 $Pt-SnO_{2-x}$ 박막은 $200{\AA}$ 정도의 입경과 주방향성이 (110)인 $(SnO_{2}){\cdot}6T$ 결정상을 보였다. $Pt-SnO_{2-x}$ 박막소자(Pt 두께 : $43{\AA}$)는 6000 ppm의 CO에 대해 80% 정도의 감도와 CO에 대해 높은 선택도를 나타내었다. 그리고 CO에 고감도를 갖는 $Pt-SnO_{2-x}$ 박막소자의 열산화 온도와 동작온도가 각각 $500^{\circ}C$와 $200^{\circ}C$이었다. $Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

바이폴라 공정을 이용한 압력센서용 출력전압 보상회로의 설계

이보나,김건년,박효덕 ( Bo Na Lee,Kun Nyun Kim,Hyo Derk Park ) 한국센서학회 1998 센서학회지 Vol.7 No.5

In this paper, integrated pressure sensor with calibration of offset voltage and full scale output and temperature compensation of offset voltage and full scale output were designed. The signal conditioning circuitry are designed that calibrate the offset voltage and full scale output to desired values and minimize the temperature drift of offset voltage and full scale output. Designed circuits are simulated using SPICE in a bipolar technology. The ion implanted resistor of different temperature coefficient were used to trimming the desired values. As a results, offset voltage was calibrated to 0.133V and the temperature drift of offset voltage was reduced to 42 ppm/℃. Also, the full scale output was calibrated to 4.65V and the temperature coefficient of full scale output was reduced to 40ppm℃ after temperature compensation.

병열형가열부를 이용한 후막형 접촉연소식 가스센서 제조

박준식,이재석,홍성제,박효덕,신상모 ( Jun Sik Park,Jae Suk Lee,Sung Jei Hong,Hyo Derk Park,Sang Mo Shin ) 한국센서학회 1996 센서학회지 Vol.5 No.1

Thick film type gas sensors with parallel Pt heaters were fabricated by screen printing process and investigated sensitivities for methane gas. The TR7905 was selected as Pt paste for heater by characterization the properties of TCRs and thick film microstructures. The average resistance of parallel Pt heaters was 1.8Ω, and the best TCR obtained was 3685 ppm/℃. do the top of the Pt heaters, a sensing layer added with Pt and Pd as catalyst paste was screen printed and heat treated. The sensitivity of the sensor was 4.3mV/1000ppm for methane. The power consumption of the sensors was 2.12watts.

저온 경화형 Ag 페이스트 및 이를 이용한 Ag 후막의 제조 및 특성

박준식,황준호,김진구,김용한,박효덕,강성군,Park, Joon-Shik,Hwang, Joon-Ho,Kim, Jin-Gu,Kim, Yong-Han,Park, Hyo-Derk,Kang, Sung-Goon 한국재료학회 2003 한국재료학회지 Vol.13 No.1

Properties of Ag thick films fabricated by using low temperature curable silver pastes were investigated. Ag pastes were consisted of polymer resins and silver powders. Ag pastes were used for conductive or fixing materials between board and various electrical and electronic devices. Low temperature curable Ag pastes have some advantages over high temperature curable types. In cases of chip mounting, soldering properties were required for screen printed Ag thick films. In this study, four types of Ag pastes were fabricated with different compositions. Screen printed Ag thick films on alumina substrates were fabricated at various curing temperatures and times. Thickness, resistivity, adhesive strength and solderability of fabricated Ag thick films were characterized. Finally, Ag thick films produced using Ag pastes, sample A and B, cured at $150^{\circ}C$ for longer than 6 h and $180^{\circ}C$ for longer than 2 h, and $150^{\circ}C$ for longer than 1 h and $180^{\circ}C$ for 1 h, respectively, showed low resistivities of $10^{-4}$ $∼10^{-5}$ Ωcm and good adhesive strength of 1∼5 Mpa. Soldering properties of those Ag thick films with curing temperatures at solder of 62Sn/36Pb/3Ag were also investigated.

Pt-SnO<SUB>2</SUB> 박막 가스 감지소자

노태문(Tae-Moon Roh),박효덕(Hyo-Derk),이용현(Yong-Hyun Lee),이덕동(Duk-Dong Lee),손병기(Byung-Ki Sohn) 대한전자공학회 1986 대한전자공학회 학술대회 Vol.1986 No.6