http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
$CH_{3}CN$ 감지를 위한 $SnO_{2}/Al_{2}O_{3}/Pd$ 후막소자의 제조 및 그 특성
박효덕,조성국,손종락,이덕동,Park, Hyo-Derk,Jo, Sung-Guk,Sohn, Jong-Rack,Lee, Duk-Dong 한국센서학회 1992 센서학회지 Vol.29 No.3
The optimum base material was selected by the thermal decomposition temperature of $CH_{3}CN$ on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of $SnO_{2}$, $CH_{3}CN$ was initiated to decompose at $130^{\circ}C$ and produced a lot of products at $200^{\circ}C$. The products from the reaction were found to be $H_{2}O$, $NH_{3}$ and CO, but $N_{2}O$ has started to produce at $320^{\circ}C$. The sensing characteristics of $SnO_{2}$ sensor to $CH_{3}CN$ are influenced by the absorbed species which are produced by the oxidation reaction of $CH_{3}CN$ on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, $NH_{3}$, $H_{2}O$ and $NO_{x}$ etc.. It was assumed that the amount of $NO_{x}$ play a great role to the determining sensing properties. In the condition of 170 ppm $CH_{3}CN$, the sensitivity and optimum operating temperature of $SnO_{2}$ were 70% and $300^{\circ}C$, respectively. In this research, the response time of $CH_{3}CN$ to $SnO_{2}/Al_{2}O_{3}/Pd$ sensor added with 0.2 wt % Pd was found about 10 sec and sensitivity was also found relatively high. $CH_{3}CN$ 감지를 위한 최적 모물질은 $CH_{3}CN$의 억분해 온도와 생성량을 적외선 흡수 스펙트럼으로부터 비교함으로써 선정되었다. $SnO_{2}$ 표면에서 $CH_{3}CN$은 $130^{\circ}C$에서부터 열분해되기 시작하여 $300^{\circ}C$에서는 많은 양의 생성물을 생성하였다. 산화반응에 의한 $CH_{3}CN$은 $CO_{2}$, $NH_{3}$ 및 $H_{2}O$로 열분해되었으며, $320^{\circ}C$에서부터 $N_{2}O$가 생성되기 시작하였다. $SnO_{2}$ 감지소자의 $CH_{3}CN$에 대한 감지특성은 $CH_{3}CN$과 금속산화물과의 산화반응으로 인해 생성된 흡착종에 의해 영향을 받았다. 감지물질표면과의 반응에서 생성된 흡착종은 CO, $NH_{3}$, $H_{2}O$ 및 $NO_{x}$ 등이었다. $NO_{x}$의 생성량은 감지특성에 큰 영향을 나타냄을 알 수 있다. 170 ppm의 $CH_{3}CN$에 대한 $SnO_{2}$의 감도와 동작온도는 각각 70% 정도와 $300^{\circ}C$이었다. 0.2wt% Pd 첨가된 $SnO_{2}/Al_{2}O_{3}/Pd$ 감지소자는 $CH_{3}CN$에 대해 높은 감도를 나타내었으며, 응답시간은 약 10초이었다.
CH3CN 감지를 위한 SnO2/Al2O3/Pd 후막소자의 제조 및 그 특성
박효덕,조성국,손종락,이덕동 ( Hyo Derk Park,Sung Guk Jo,Jong Rack Sohn,Duk Dong Lee ) 한국센서학회 1992 센서학회지 Vol.1 No.1
The optimum base material was selected by the thermal decomposition temperature of CH₃CN on the surface of various metal oxides, and the FT-IR analyses of its products. On the surface of SnO₂, CH₃CN was initiated to decompose at 130℃ and produced a lot of products at 200℃. The products from the reaction were found to be H₂O, NIA, and CO, but N₂O has started to produce at 320℃. The sensing characteristics of SnO₂ sensor to CH,CN are influenced by the absorbed species which are produced by the oxidation reaction of CH₃CN on the surface of metal oxide. The gaseous species produced from the surface of sensing material in the oxidation reaction were found to be CO, NH₃, H₂O and NO, etc.. It was assumed that the amount of N0, play a great role to the determining sensing properties. In the condition of 170 ppm CH₃CN, the sensitivity and optimum operating temperature of SnO₂ were 70% and 300℃, respectively. In this research, the response time of CH₃CN to SnO₂/Al₂O₃/Pd sensor added with 0.2 wt% Pd was found about 10 sec and sensitivity was also found relatively high.
박효덕,이덕동,Park, Hyo-Deok,Lee, Deok-Dong 한국재료학회 1992 한국재료학회지 Vol.2 No.3
$TiO_2$가 5-50wt%첨가된 $SnO_2/TiO_2$ 후막형 감습소자를 스크린 프린팅 법을 이용하여 제조 하였다. 소자의 표면결정구조를 XRD, SEM 그리고 FTIR로 조사하였으며, 전기적 특성에 의한 후막소자의 감습특성을 측정하였다. $SnO_2/TiO_2$ 후막은 $TiO_2$ 결정상 보다 주로$(SnO^2){\cdot}6T$ 결정상으로 나타났으며, $1300^{\circ}C$에서 소결된 후막소자의 평균입경은 $2.0{\mu}m$이었다. 또한 $1300^{\circ}C$에서 소결된 10wt% $TiO_2$가 첨가된 $SnO_2/TiO_2$ 후막소자는 상대습도 20-90%에서 높은 감습특성을 나타내었다. The $SnO_2/TiO_2$ thick film type humidity sensing devices containing 5 to 50 wt% $TiO_2$ have been fabricated by a typical screen printing technique. The surface crystal structure and microstructure were investigated by XRD, SEM and FTIR analyses. And the measurement of sensing characteristics of the thick film devices have been carried out. The crystalline phase of the thick flus were mainly identified as $(SnO_2){\cdot}6T$ crystal structure with XRD analysis, and the thick films sintered at $1300^{\circ}C$ showed an average particle size of $2.0{\mu}m$. The $SnO_2/TiO_2$ device sintered at $1300^{\circ}C$ containing 10 wt% $TiO_2$ showed high sensitivity to humidity in the range of R.H. 20-90%.
Tetraethylorthosilicate 용액을 침적시킨 SnO2 후막형 가스감지소자의 아세토니트릴에 대한 선택성
박효덕,조성국,손종락,이덕동 ( Hyo Derk Park,Sung Guk Cho,Jong Rack Sohn,Duk Dong Lee ) 한국센서학회 1993 센서학회지 Vol.2 No.2
The SnO/A1z03/Nbzos thick film devices added with SiO₂ were fabricated by means of the dipping into Si(CzHso)a solution and the sensing characteristics of the thick film devices to CH₃CN vapor was investigated The reaction products of CH₃CN by the heating reaction on the thick film devices were analyzed by the FT-IR method using gas reaction cell. The products of CH₃CN vapor by the surface reaction on the thick film devices were CO₂, H₂O, N₂O and the acids produced from NO_x and H₂O. Optimum processes of the thick film devices were determined by the investigation of the sensing characteristics to CH₃CN vapor. The thick film devices showed high selectivity to CH₃CN vapor and negative sensitivity by oxidizing agents (NO_x) produced during the reaction of CH₃CN vapor on the thick films.