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바이폴라 공정을 이용한 압력센서용 출력전압 보상회로의 설계
이보나,김건년,박효덕 ( Bo Na Lee,Kun Nyun Kim,Hyo Derk Park ) 한국센서학회 1998 센서학회지 Vol.7 No.5
In this paper, integrated pressure sensor with calibration of offset voltage and full scale output and temperature compensation of offset voltage and full scale output were designed. The signal conditioning circuitry are designed that calibrate the offset voltage and full scale output to desired values and minimize the temperature drift of offset voltage and full scale output. Designed circuits are simulated using SPICE in a bipolar technology. The ion implanted resistor of different temperature coefficient were used to trimming the desired values. As a results, offset voltage was calibrated to 0.133V and the temperature drift of offset voltage was reduced to 42 ppm/℃. Also, the full scale output was calibrated to 4.65V and the temperature coefficient of full scale output was reduced to 40ppm℃ after temperature compensation.
집적화된 실리콘 압력센서의 출력전압 보상파라미터 추출 및 그 특성
이보나,김건년,박효덕,신상모,이경탁,김찬,권혁채,이상조,박현주 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
An integrated silicon pressure sensor has been designed, fabricated and tested. The signal conditioning circuits were designed to include calibration and temperature compensation of output voltage through trimming of diffusion and ion-implanted resistors. Before trimming of resistors, the compensation parameters such as pressure sensitivity, temperature coefficient of pressure sensitivity, temperature coefficient of piezoresistors and pressure sensitivity of piezoresistors were measured. Then offset voltage, span, and temperature coefficients of offset voltage and span were calibrated by trimming of resistors. The measured output voltage met our design specification and simulation value above room temperature. But, the measured output voltage at -30°C deviated from our design specification and simulation value because the offset voltages were found to vary randomly as a function of temperature.
김건년,이보나,박효덕,신상모,이근혁,권혁채 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
In this paper, we studied the anodic bonding of 5-inch silicon and #7740 Pyrex glass wafers with a thickness of 3mm by using the EV501 bonder and the Karl Suss SB6 bonder. The test conditions for anodic bonding of the EV501 bonder system with a full field electrode were temperature of 400 ℃ and voltage of 800V in a chamber pressure of 1X10^(3)mbar. The SB6 bonder with a star shaped electrode was tested at the temperature and voltage of 450 ℃ and 1300V in the atmosphere, respectively. As the results of test, we obtained the void free samples regardless of shape of substrates such as etched wafers with cavities and drilled glasses with holes.
Si Bulk Micromachining을 위한 Wafer Rolling Etching 및 그 특성
김건년,이보나,박효덕,신상모,공경준,장동근,김병철,권혁채,이봉희 경북대학교 센서기술연구소 1998 센서技術學術大會論文集 Vol.9 No.1
A wafer rolling etching system for the silicon bulk micromachining has been designed and fabricated. The silicon diaphragms were anisotropically etched in a 24.5 weight percent KOH solution. Compared to the conventional KOH etching systems, pyramidal hillocks, and wave-shaped structures on the etched surfaces were greatly reduced by using this system. After etching for time of 438 minutes, the average etched depth and the etch-rate were measured to be 537μm and 1.22μm/min, respectively. The average etching uniformity of etching depth was 0.87% in 5-inch wafer. Our results showed that the wafer rolling method enhanced etch uniformity and etch rate.