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WNx Self - Align Gate GaAs LDD MESFET의 제작 및 특성
문재경(Jae Kyoung Mun),김해천(Haecheon Kim),곽명현(Myeong-Hyeon Kwak),강성원(Sung-Won Kang),임종원(Jong-Won Lim),이재진(Jae Jin Lee) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.4(2)
본 연구에서는 SiO₂ side-wall 공정을 이용하여 내열금속 WN_x 자기정렬형 게이트 갈륨비 소 MESFET을 개발하였다. MESFET은 평면 대칭형 자기정렬 구조를 가지며, 이온주입법을 이용하여 집적화가 가능하게 하였다. 게이트전압 +0.6V에서 전달컨덕턴스는 354 mS/㎜, 포화전류는 171 ㎃/㎜를 나타내었다. RF 측정 결과 기생성분의 de-embedding없이 차단주파수는 43 ㎓이상으로 평가되었다. WN_x 자가정렬형 게이트 갈륨비소 MESFET 기술은 휴대전화기, 개인이동통신, 무선통신망과 같은 디지털 이동통신 시스템용 선형 전력 증폭기 집적회로나 다기능 모노리씩 집적회로를 구현하는데 활용될 것으로 기대된다. We have developed a refractory WN_x self-aligned gate GaAs metal-semiconductor field-effect transistor (MESFET) using SiO₂ side-wall process. The MESFET has a fully ion-implanted, planar, symmetric selfalignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354 mS/㎜ up to Vgs=+0.6V and the saturation current of 171 ㎃/㎜ were obtained. As high as 43 ㎓ of cut-off frequency has been realized without any de-embedding of parasitic effects. The refractory WN_x self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems, such as hand-held phone (HHP), personal communication system (PCS) and wireless local loop(WLL).
SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계
문재경,임종원,장우진,지흥구,안호균,김해천,박종욱,Mun Jae Kyoung,Lim Jong Won,Jang Woo Jin,Ji, Hong Gu,Ahn Ho Kyun,Kim Hae Cheon,Park Chong Ook 한국진공학회 2005 Applied Science and Convergence Technology Vol.14 No.4
This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems. 본 연구에서는 스위치, 위상변위기, 감쇄기등 전파제어회로를 설계 및 제작할 수 있는 pHEMT스위치 소자에 적합한 에피구조를 설계하였다. 고성능의 스위치 소자를 위한 pHEMT 채널층 구조는 이중 면도핑층을 가지며 사용 중 게이트 전극의 전계강도가 약한 깊은 쪽 채널층의 Si 면농도가 상층부보다 약 1/4정도 낮을 경우 격리도등 우수한 특성을 보였다. 설계된 에피구조와 ETRI의 $0.5\mu$m pHEMT MMIC 공정을 이용하여 2.4GHz 및 5GHz 대역 표준 무선랜 단말기에 활용 가능한 SPDT Tx/Rx MMIC 스위치를 설계 및 제작하였다. 제작된 SPDT형 스위치는 주파수 6.0 GHz, 동작전압 0/-3V에서 삽입손실 0.849 dB, 격리도 32.638 dB, 그리고 반사손실 11.006 dB의 특성을 보였으며, 전력전송능력인 $P\_{1dB}$는 약 25dBm, 그리고 선형성의 척도인 IIP3는 42 dBm 이상으로 평가되었다. 이와 같은 칩의 성능은 본 연구에서 개발된 SPDT 단일고주파집적회로 스위치가 2.4GHz뿐만 아니라 SGHB 대역 무선랜 단말기에 활용이 충분히 가능함을 말해준다.
문재경 ( Jae Kyoung Mun ),김동영 ( Dong Young Kim ),임종원 ( Jong Won Lim ),안호균 ( Ho Kyun Ahn ),김해천 ( Hae Cheon Kim ),유현규 ( Hyun Kyu Yu ) 대한금속재료학회 ( 구 대한금속학회 ) 2007 ELECTRONIC MATERIALS LETTERS Vol.3 No.4
This paper describes the design, fabrication and measurement of a single-pole-double-throw(SPDT) MMIC switch applicable to IEEE 802.15.3c standard wireless local area network(WLAN) using an ETRI`s 0.12um GaAs/AlGaAs pHEMT switch library and high isolation switch cell design technologies. This SPDT switch has a measured insertion loss of -3.1dB~-4.2dB and isolation of -41.7dB~-42.5dB in the 59~63GHz frequency band. Thermal test was also performed to evaluate the thermal stability of switching performances from -50℃ to +100℃ with a step of 20℃ in an atmosphere. The variations of insertion loss and isolation at a center frequency of 60 GHz were -2.17±0.15 dB and -41.07±0.85 dB, respectively. This means the SPDT switch is very stable at both high and low temperatures. Therefore we can conclude that the developed high isolation pHEMT SPDT MMIC switch is suitable for an Rx-Tx switch of WLAN system. However, the chip size of 3.0 mm×0.99 mm is still large and then we need an additional work for developing a new switch cell to decrease the chip size.
고전압 β-산화갈륨(β-Ga<sub>2</sub>O<sub>3</sub>) 전력 MOSFETs
문재경,조규준,장우진,이형석,배성범,김정진,성호근,Mun, Jae-Kyoung,Cho, Kyujun,Chang, Woojin,Lee, Hyungseok,Bae, Sungbum,Kim, Jeongjin,Sung, Hokun 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.3
This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.
문재경(Jae-Kyoung Mun),배성범(S.B. Bae),이형석(H.S. Lee),김진식(Z.S. Kim),이현수(H.S. Lee),장현규(H.G. Jang) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Global R&D trend of high efficiency and low loss GaN power semiconductor technologies will be presented in the conference. This is why to mention the importance of R&D in our country and hope to be next generation big player in the IT-consumer, EV/HEV, PV, ESS, FC, renewable energy markets. Finally, we will talk about several R&D results of GaN power devices and power conversion modules developed in ETRI for last several years.
LTCC 기판의 60 GHz 대역 유전특성 및 LTCC 위에 구현된 전송선로의 전달특성 측정
김동영 ( Dong Young Kim ),문재경 ( Jae Kyoung Mun ),김해천 ( Hae Cheon Kim ),유현규 ( Hyun Kyu Yu ) 대한금속재료학회 ( 구 대한금속학회 ) 2008 ELECTRONIC MATERIALS LETTERS Vol.4 No.1
The dielectric properties at millimeter-wave band(MMW) of commercially available LTCC substrate were measured using cavity resonance method. A6S substrate from Ferro has best dielectric properties at MMW bands, and the other substrates also have good dielectric properties. CBCPW (Conductor backed coplanar waveguid) lines for MMW were designed and measured. The transmission losses of CBCPW lines on LTCC substrate with tand less than 0.002 were 0.1dB/mm. As the tand of LTCC substrate increases to 0.004, the losses of CBCPW lines at 60 GHz increase to 0.15dB/mm. However, this transmission loss of 0.15dB/mm is sufficiently low in the application of LTCC as a packaging technology at MMW band. As expected, the transmission losses of lines were critically dependant on the dielectric properties of the substrate used.
S/X-band용 AlGaN/GaN HEMT 소자의 특성
장우진(Woo-Jin Chang),안호균(Hokyun Ahn),임종원(Jong-Won Lim),문재경(Jae-Kyoung Mun),윤형섭(Hyung-Sup Yoon),민병규(Byoung-Gue Min),지홍구(Hong-Gu Ji),강동민(Dong-Min Kang),김해천(Haecheon Kim),남은수(Eun Soo Nam) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
The fabrication method and the performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs) for S/X-band Applications were presented. The fabricated AlGaN/GaN HEMT with a gate length of 0.5um and a total gate width of 300um exhibited a maximum transconductance of 305mS/mm and a drain saturation current of 180mA, respectively. The cut-off frequency(fT) and the maximum frequency of oscillation (fmax), measured at Vds = 8V, were 31GHz and 53GHz, respectively. The AlGaN/GaN HEMT also shows a maximum output power density of 2.3W/mm at 2.4GHz and 1.8W/mm at 10GHz. For the fabricated AlGaN/GaN HEMT with a gate length of 0.25um and a total gate width of 100um, the cut-off frequency(fT) and the maximum frequency of oscillation (fmax), measured at Vds = 8V, were 39GHz and 120GHz, respectively.
Guard Ring 구조에 따른 β-산화갈륨(β-Ga<sub>2</sub>O<sub>3</sub>) 전력 SBDs의 전기적 특성 비교
이훈기 ( Hoon-ki Lee ),조규준 ( Kyujun Cho ),장우진 ( Woojin Chang ),문재경 ( Jae-kyoung Mun ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.2
This reports the electrical properties of single-crystal β-gallium oxide (β-Ga<sub>2</sub>O<sub>3</sub>) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al<sub>2</sub>O<sub>3</sub> passivation layer (film guard ring: FGR) and the other is with vias formed in the Al<sub>2</sub>O<sub>3</sub> passivation layer to allow the metal to contact the Ga<sub>2</sub>O<sub>3</sub> surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (Ron,sp) is 5.9 mΩ·cm<sup>2</sup> and 29 mΩ·cm<sup>2</sup>. The series resistance (Rs) in the nonlinear section extracted using Cheung’s formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al<sub>2</sub>O<sub>3</sub> was widely deposited on the Ga<sub>2</sub>O<sub>3</sub> surface, which prevent leakage current on the Ga<sub>2</sub>O<sub>3</sub> surface.
필드 플레이트 구조에 대한 GaN FET 항복전압특성 영향
장우진(Woojin Chang),김정진(Jeong-Jin Kim),배성범(Sung-Beom Bae),박영락(Young-Rak Park),문재경(Jae-Kyoung Mun),고상춘(Sang-Chun Ko) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
This paper presents various field plates (FPs) fabricated on GaN Field Effect Transistors (FETs) using AlGaN/GaN on sapphire substrates. GaN FETs with six different FPs were fabricated to compare with their FPs and lengths of FPs in terms of their breakdown voltage characteristics. The fabricated GaN FET with the gamma-shaped gate FP exhibited a breakdown voltage of 1190 V for a gate-to-drain spacing of 15㎛, while the GaN FET without any FP (a planar gate) showed a breakdown voltage of 1050 V for the same gate-to-drain spacing. For the GaN FETs with 10㎛ gate-to-drain spacing and gamma-shaped gate FPs, they were varied 0~2 ㎛ in the length of the gamma-shaped gate FPs and the GaN FET with 0.5㎛-length gamma-shaped gate FP showed more 50~140 V than the others. And in another processed wafer, the GaN FET with the source FP and the gamma-shaped FP together had a breakdown voltage of 1480 V more than 870 V with only the source FP for a gate-to-drain spacing of 16㎛.