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Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al<sub>2</sub>O<sub>3</sub> 패시베이션 효과
김정진,안호균,배성범,박영락,임종원,문재경,고상춘,심규환,양전욱,Kim, Jeong-Jin,Ahn, Ho-Kyun,Bae, Seong-Bum,Pak, Young-Rak,Lim, Jong-Won,Moon, Jae-Kyung,Ko, Sang-Chun,Shim, Kyu-Hwan,Yang, Jeon-Wook 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.11
Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.
필드 플레이트 구조에 대한 GaN FET 항복전압특성 영향
장우진(Woojin Chang),김정진(Jeong-Jin Kim),배성범(Sung-Beom Bae),박영락(Young-Rak Park),문재경(Jae-Kyoung Mun),고상춘(Sang-Chun Ko) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
This paper presents various field plates (FPs) fabricated on GaN Field Effect Transistors (FETs) using AlGaN/GaN on sapphire substrates. GaN FETs with six different FPs were fabricated to compare with their FPs and lengths of FPs in terms of their breakdown voltage characteristics. The fabricated GaN FET with the gamma-shaped gate FP exhibited a breakdown voltage of 1190 V for a gate-to-drain spacing of 15㎛, while the GaN FET without any FP (a planar gate) showed a breakdown voltage of 1050 V for the same gate-to-drain spacing. For the GaN FETs with 10㎛ gate-to-drain spacing and gamma-shaped gate FPs, they were varied 0~2 ㎛ in the length of the gamma-shaped gate FPs and the GaN FET with 0.5㎛-length gamma-shaped gate FP showed more 50~140 V than the others. And in another processed wafer, the GaN FET with the source FP and the gamma-shaped FP together had a breakdown voltage of 1480 V more than 870 V with only the source FP for a gate-to-drain spacing of 16㎛.