Metal CMP 용 컨디셔너 디스크 표면에 존재하는 다이아몬드의 형상이 미치는 패드 회복력 변화

김규채,강영재,유영삼,박진구,원영만,오광호,Kim, Kyu-Chae,Kang, Young-Jae,Yu, Young-Sam,Park, Jin-Goo,Won, Young-Man,Oh, Kwang-Ho 한국마이크로전자및패키징학회 2006 마이크로전자 및 패키징학회지 Vol.13 No.3

디바이스의 고집적화로 인한 다층 배선구조로 인해 초점심도가 중요해짐에 따라 표면의 평탄도가 디바이스에 매우 큰 영향을 주게 되어, 표면의 평탄도를 결정지어주는 CMP(Chemical Mechanical Polishing) 공정이 매우 중요한 요소가 되었다. CMP 공정에는 슬러리, 연마패드, 컨디셔닝 디스크와 같은 소모품들이 사용된다. 이러한 소모품 중 하나인 컨디셔닝 디스크를 이용한 컨디셔닝 공정은 CMP 공정이 끝난 후 패드의 기공과 groove 내에 잔류 하는 화학반응물이나 슬러리와 같은 잔유물들을 컨디셔닝 디스크 표면에 부착되어 있는 다이아몬드를 이용하여 제거 함으로써 연마율을 높이고, 연마 패드의 수명을 증가 시켜주는 역할을 한다. 컨디셔닝 공정을 실시함으로써 연마 패드의 수명이 연장되기 때문에 경제적인 부분에서도 큰 이점을 가지게 된다. 본 연구에서는 이러한 CMP 공정에서 중요한 역할을 하는 소모품 중 하나인 컨디셔닝 디스크 표면에 존재하는 다이아몬드의 밀도, 형상 그리고 크기에 따라 연마 패드의 회복력 변화를 알아봄으로써 효율적인 컨디션닝 디스크의 특성을 평가해 보았다. Recently, CMP (Chemical Mechanical Polishing) is one of very important processing in semiconductor technology because of large integration and application of design role. CMP is a planarization process of wafer surface using the chemical and mechanical reactions. One of the most important components of the CMP system is the polishing pad. During the CMP process, the pad itself becomes smoother and glazing. Therefore it is necessary to have a pad conditioning process to refresh the pad surface, to remove slurry debris and to supply the fresh slurry on the surface. A conditioning disk is used during the pad conditioning. There are diamonds on the surface of diamond disk to remove slurry debris and to polish pad surface slightly, so density, shape and size of diamond are very important factors. In this study, we characterized diamond disk with 9 kinds of sample.

기상 자기조립박막 법을 이용한 나노임프린트용 점착방지막 형성 및 특성평가

차남구,김규채,박진구,정준호,이응숙,윤능구,Cha, Nam-Goo,Kim, Kyu-Chae,Park, Jin-Goo,Jung, Jun-Ho,Lee, Eung-Sug,Yoon, Neung-Goo 한국재료학회 2007 한국재료학회지 Vol.17 No.1

Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.

ZnS:Mn AC 박막형 Electroluminescence device의 제작 및 특성조사

우재룡,김규채,채경락,이상윤 慶北大學校 自然科學大學 1987 自然科學論文集 Vol.5 No.-

ZnS: Mn thin film electroluminescence device have been fabricated by vacuum evaporation. Phosphor materials were prepared by heat treatment of pure ZnS powder and 0.45wt% quantities of Mn in Argon atmosphere for one hour. Insulator materials were prepared by the same method. These materials were evaporated on the ITO transparent electrode. These films showed electroluminescence phenomenon for AC input power. The brightness was measured as the dependence of applied voltage, the thickness, and the properties of insulator.

반도체 습식 세정 공정 중 상온의 초순수와 염기성 수용액 내에서 오존의 용해도 최적화

이상호,이승호,김규채,권태영,박진구,배소익,이건호,김인정,Lee Sang-Ho,Lee Seung-Ho,Kim Kyu-Chae,Kwon Tae-Young,Park Jin-Goo,Bae So-Ik,Lee Gun-Ho,Kim In-Jung 한국반도체디스플레이기술학회 2005 반도체디스플레이기술학회지 Vol.4 No.4

The process optimization of ozone concentration and half life time was investigated in ultra pure water and alkaline solutions for the wet cleaning of silicon wafer surface at room temperature. In the ultra pure water,. the maximum concentration (35 ppm) of ozone was measured at oxygen flow rate of 3 liters/min and ozone generator power over 60%. The half life time of ozone increased at lower power of ozone generator. Additive gases such as $N_2$ and $CO_2$ were added to increase the concentration and half life time of ozone. Although the maximum ozone concentration was higher with the addition of $N_2$ gas, a longer half life time was observed with the addition of $CO_2$. When $NH_4OH$ of 0.05 or 0.10 vol% was added in DI water, the pH of the solution was around 10. The addition of ozone resulted in the half life time less than 1 min. In order to maintain high pH and ozone concentration, ozone was continuously supplied in 0.05 vol% ammonia solutions. 3 ppm of ozone was dissolved in ammonia solutions. The static contact angle of silicon wafer surface became hydrophilic. The particle removal was possible alkaline ozone solutions. The organic contamination can be removed by ozonated ultra pure water and then alkaline solution containing ozone can remove the particles on silicon surface at room temperature.

PECVD를 이용한 금속 스탬프용 점착방지막 형성과 특성 평가

차남구,박창화,조민수,김규채,박진구,정준호,이응숙,Cha, Nam-Goo,Park, Chang-Hwa,Cho, Min-Soo,Kim, Kyu-Chae,Park, Jin-Goo,Jeong, Jun-Ho,Lee, Eung-Sug 한국재료학회 2006 한국재료학회지 Vol.16 No.4

Nanoimprint lithography (NIL) is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and resolution. NIL creates patterns by mechanical deformation of an imprint resist and physical contact process. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting process. Stiction between the resist and the stamp is resulted from this physical contact process. Stiction issue is more important in the stamps including narrow pattern size and wide area. Therefore, the antistiction layer coating is very effective to prevent this problem and ensure successful NIL. In this paper, an antistiction layer was deposited and characterized by PECVD (plasma enhanced chemical vapor deposition) method for metal stamps. Deposition rates of an antistiction layer on Si and Ni substrates were in proportion to deposited time and 3.4 nm/min and 2.5 nm/min, respectively. A 50 nm thick antistiction layer showed 90% relative transmittance at 365 nm wavelength. Contact angle result showed good hydrophobicity over 105 degree. $CF_2$ and $CF_3$ peaks were founded in ATR-FTIR analysis. The thicknesses and the contact angle of a 50 nm thick antistiction film were slightly changed during chemical resistance test using acetone and sulfuric acid. To evaluate the deposited antistiction layer, a 50 nm thick film was coated on a stainless steel stamp made by wet etching process. A PMMA substrate was successfully imprinting without pattern degradations by the stainless steel stamp with an antistiction layer. The test result shows that antistiction layer coating is very effective for NIL.

연마제 특성에 따른 차세대 금속배선용 Al CMP (chemical mechanical planarization) 슬러리 평가

차남구,강영재,김인권,김규채,박진구,Cha, Nam-Goo,Kang, Young-Jae,Kim, In-Kwon,Kim, Kyu-Chae,Park, Jin-Goo 한국재료학회 2006 한국재료학회지 Vol.16 No.12

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

나노임프린팅 공정을 위한 점착방지막 형성

차남구(N. G. Cha),박창화(C. H. Park),김규채(K. C. Kim),박진구(J. G. Park) 한국소성가공학회 2006 한국소성가공학회 학술대회 논문집 Vol.2006 No.5