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권영규(Y.G.Kwon),장동화(D.H.Jang),이광일(K.I.Lee),박광복(K.B.PARK),장대성(D.S.Jang) 한국철도학회 1998 한국철도학회 학술발표대회논문집 Vol.- No.-
This study was carried about the basic design and FEM analysis of aluminium carbody for articulated trailer of Korean High Speed Train of maximum operating speed of 350㎞/h. The integral design by extra-long extruded sections made possible through the use of aluminium alloys and continuous window shape with skin were adopted in the basic design of aluminium carbody. Articulated structures in each trailer"s end were welded laterally on both sides of gangway. FEM analysis showed that the design satisfied the specified load criteria. Futher study should be carried out for optimal design which enables the weight of carbody structure to reduce adequately.
실리콘이온주입된 실리콘산화막의 광루미니센스에 관한 연구
김광희(K. H. Kim),이재희(J. H. Lee),김광일(K. I. Kim),고재석(J. S. Koh),최석호(S. H. Choi),권영규(Y. K. Kwon),이원식(W. S. Lee),이용현(Y. H. Lee) 한국진공학회(ASCT) 1998 Applied Science and Convergence Technology Vol.7 No.2
실리콘산화막에 실리콘이온주입을 5×10^(16)/㎠, 1×10^(17)/㎠, 3×10^(17)/㎠ 으로 하여 열처리온도와 열처리시간을 변화시키면서 광루미니센스, XRD, TEM을 관찰하였다. 이온주입량이 적고 열처리온도가 낮을경우에 가시광 광루미니센스를 관찰할 수 있었다. 광루미니센스의 peak는 7420Å과 8360Å 위치에 있었으며, 열처리시간이 길어짐에 따라 intensity는 각각 증가하였다. 이온주입량이 많고 열처리온도가 높을경우에는 광루미니센스가 관찰되지 않았다. 이온주입량이 적고 열처리온도가 높을경우에는 열처리시간이 짧으면 가시광 광루미니센스가 있으나 열처리시간이 1시간 이상으로 길어지면 광루미니센스가 사라졌다. XRD와 TEM 결과로부터 실리콘 cluster는 nonradiative defect와 관련있으며, 실리콘이온주입된 실리콘산화막에서 관찰되는 광루미니센스의 origin은 nanocrystal 이 아니라 defect임을 알 수 있었다. 이온주입되는 실리콘이온의 량, 열처리온도와 시간의 변화는 광루미니센스를 변화시키는데 이 현상들을 Si-O-O 결합인 O위주의 결함과 Si-Si-O 결합인 Si 위주의 결함과 연관지어 설명할 수 있었다. Photoluminescence(PL), XRD, TEM results of 5×10^(16)/㎠, 1×10^(17)/㎠, 3×10^(17)/㎠ Si^+-implanted SiO₂ films on crystalline silicon are reported. At low dose implantation and low annealing temperature, visible PL are observed. The PL spectrum has 7400Å and 8360Å peaks. As annealing time increased, the PL intensity are increased and peak positions are changed. The PL spectrum are not observed at high dose implantation and high annealing temperature. For the samples of low dose and high annealing temperature, visible PL are observed at short annealing time (30 minutes) and disappear for more than 1 hour annealing. From XRD and TEM results, silicon cluster are related to nonradiative defects. It is concluded that the origin of visible PL in Si^+-implanted SiO₂ films are not nanocrystal but two kinds of radiative defects. The Si-O-O bonding related defects (O rich defects) and Si-Si-O bonding related defects (Si rich defects) are related to the PL spectrum and depend on concentration of Si^+ implantation, annealing temperature and time.
김광일(K. I. Kim),이상환(S. H. Lee),정욱진(W. J. Chung),배영호(Y. H. Bae),권영규(Y. K. Kwon),김범만(B. M. Kim),桑野 博(H. Kuwano) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.4
Si 기판에 Ar 이온을 주입하였을 때 형성된 결함의 급속열처리 온도에 따른 성장 및 회복기구를 단면 투과전자현미경과 RB(Rutherford backscattering) spectra 그리고 thermal wave(TW) modulation reflectance법으로 분석하였다. Dose 량이 1×10^(15)㎝^(-2)의 경우에 표면에서부터 연속적인 비정질층이 형성되었으나, 그 이하의 dose량에서는 비정질층이 형성되지 않았다. 비정질층이 형성되지 않은 시편은 열처리온도가 올라감에 따라서 서서히 결함이 회복되지만 1100℃의 고온에서도 많은 결함이 소멸되지 않고 남아있었다. 그리고, 표면으로부터 연속적으로 형성된 비정질층은 열처리에 의해 재결정화가 진행되나 비정질/결정질 계면의 기복이 심하고 이로 인해 micro twin, 결함 cluster 등이 밀집된 또다른 결함층을 표면 근처에 형성하며, 이들 결함들은 고온에서도 완전히 소멸되지 않았다. Damages on Si substrate induced by Ar ion implantation and its annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmission electron microscopy), RB (Rutherford backscattering) spectra and thermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1×10^(15)㎝^(-2). The recrystallization of the amorphous layer proceeded as the annealing temperature increased. However the amorphous/crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1×10^(15)㎝^(-2) disappeared slowly as the annealing temperature increased, but even at 1100℃ a few damage clusters still remained.
백서(白鼠)에서 족삼리(足三里) 침 자극이 니코틴 반복처치로 유도된 행동적 민감화 및 뇌(腦)의 측핵에서 c-Fos 발현에 미치는 영향
채윤병 ( Y. B. Chae ),심인섭 ( I. S. Shim ),권영규 ( Y. K. Kwon ),양재하 ( C. H. Yang ),김미려 ( M. R. Kim ),김광중 ( K. J. Kim ),함대현 ( D. H. Hahm ),황은주 ( E. J. Hwang ),이혜정 ( H. J. Lee ) 대한경락경혈학회 2001 Korean Journal of Acupuncture Vol.18 No.2
We have previously demonstrated that repeated injections of nicotine produced an increase in locomotor activity, dopamine (DA) release and c-Fos expression in the nucleus accumbens, one of the major projection areas of the central DA system. Acupuncture as a therapeutic intervention is widely used for the treatment of many functional disorders such as substance abuse and mental dysfunction. In order to investigate whether acupuncture has an influence on nicotine-induced reinforcing and behavioral effects, we examined the effect of acupuncture on nicotine-induced behavioral locomotor activity and c-Fos expression as an important marker of the postsynaptic neuronal activity in the nucleus accumbens utilizing the immunocytochemical detection of the Fos protein. The male Sprague-Dawly rats were given repeated daily nicotine injections (0.4 mg/kg s.c., twice daily for 7 days) followed by one challenging injection on the 4th day after the last daily injection. Systemic challenge with nicotine produced a much larger increase in locomotor activity and accumbal Fos-like immunoreactivity(FLI) in nicotine-pretreated rats. During withdrawal period(from 8th day to 11th day) acupuncture at zusanli(ST36), but not at control points(HT7, L3) significantly attenuated expected increase in nicotine-induced locomtor activity and accumbal FLI to subsequent nicotine challenge. These results demonstrated that reduction in locomotor activity by acupuncture may be mediated by reduction of postsynaptic neuronal activity in the nucleus accumbens. Our results suggest that acupuncture may have therapeutic effect on nicotine addiction.
이석윤,허명수,손동수,황병철,조동율,천희곤,오태희,송병무,송한식,이우형,이광철,김오규,권영규,구경완 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The thin film growing processes and the photolithographic techniques involved in the manufacturing of thin film magnetic heads are discussed. The thin film heads are composed of the hundreds of electromagnetic transducers on a single wafer and are made of Al_(2)O_(3)-TiC substrate on which Al_(2)O_(3) film as a insulating, protective layer and gap material, Cu film as a multi-turn coil and permalloy film as a magnetic material are deposited and patterned. In this article we will introduce how the thin film heads is fabricated and differ from an integrated semiconductor device. An effort is devoted to develop the formation of PR frame using a lithography process and finally the thin film heads manufacturing technologies.
화학 용액 담금의 열분해 방법에 의한 CdS 반도체의 성장
김홍복,김선미,권영규,차덕준,윤창선,김병호,고정곤,전용기,김광윤 群山大學校基礎科學硏究所 1998 基礎科學硏究 Vol.13 No.-
화학용액 담금의 방법에 의하여 다결정 CdS박막을 성장시켰다. 성장과정에서 온도조건, 몰농도 조건에 따라 CdS 다결정의 특성에 영향을 주는 요인들을 전자현미경, 광흡수 및 광전류 특성과 온도 및 빛의 세기에 따른 저항의 변화를 통해 분석하였다. Polycristalline CdS thin films have been grown by the chemical bath pyrolysis(CBP) method. The CdS films characteristics were investigated with scanning electron microscope(SEM), optical absorption measurements, photoconductivity, and resistance dependences on temperature and light intensity.
HF:H₂O₂:CH₃COOH 용액을 이용한 실리콘-져마늄 에피막의 화학적 선택 식각
안창근,정욱진,배영호,김광일,강봉구,권영규,손병기 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The selective chemical etching of Si_(1)-_(x)Ge_(x). heteroepitaxial layer grown by rapid thermal CVD (RTCVD) method has been studied with respect to Ge content ( 0.15 ≤ x ≤ 0.30 ). The properties of HF : H_(2)O_(2) : CH_(3)COOH (1:2:3) chemical etchant is highly selective in the Si_(1)-_(x)Ge_(x) / Si heteroepitaxial structure. The selectivity is presented better than 100 for Ge content (x≥0.20) and increased with Ge content in Si_(1)-_(x)Ge_(x) heteroepitaxial layer.
김광일,손병기,정욱진,권영규,배영호,강봉구 한국센서학회 1996 센서학회지 Vol.5 No.1
Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, SiH₂Cl₂/ H₂ gas mixtures and various process parameters including Hz prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of 900℃. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about 200A /decade in the structure of undoped Si / n^+ -Si substrate.