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김진사(Jin-Sa Kim) 대한전기학회 2010 전기학회논문지 Vol.59 No.6
The Sr0.?Bi2.3Nb₂O? thin films were deposited on Si substrate using RF magnetron sputtering method. And the SBN thin films were annealed at 650~800[℃]. The surface rougness showed about 0.42[㎚] in annealed thin film at 650[℃]. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 700[℃]. The voltage dependence of dielectric loss showed a value within 0.02 in voltage ranges of -10~+10[V]. The dielectric constant characteristics showed a stable value with the increase of frequency. Also, the SBN thin films annealed at 750[℃] showed a fatigue-free characteristics up to 1.0×10? cycles.
김진사(Jin-Sa Kim),배덕권(Duck-Kweon Bae) 대한전기학회 2009 전기학회논문지 Vol.58 No.9
As the demand of electric power is increasing rapidly, the need of the compact and light electric power device is also increased. Copper clad aluminum (CCA) is newly proposed electrical conductor, because of its light-weight and low-cost characteristics, to replace the existing conductor made of copper. This paper presents the salt-proof characteristics of the copper clad aluminum (CCA) to certificate long time safe operation of the newly proposed electrical conductor. The two types of the CCA conductor were tested in the neutral salt spray tester. The experimental results of two types of the CCA with salt spray were presented in this paper. The results comprise resistance measured data, micro picture of the selected surface, and component measured data according to the elapsed time. The period of the experiment was 1,000 hours. There was no evidence to show the corrosion of CCA during the whole period of the experiments.
증착 및 열처리온도에 따른 SCT 박막의 구조적인 특성
김진사,Kim, Jin-Sa 한국반도체디스플레이기술학회 2007 반도체디스플레이기술학회지 Vol.6 No.3
The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.
RF 스퍼터링법에 의한 SCT 박막의 Sr/Ca 비율 영향
김진사,오용철,Kim, Jin-Sa,Oh, Yong-Cheul 한국반도체디스플레이기술학회 2006 반도체디스플레이기술학회지 Vol.5 No.4
The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.