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오용철(Yong-Cheul Oh),신철기(Cheol-Ki Shin),박건호(Geon-Ho Park),이덕진(Deok-Jin Lee),김충혁(Chung-Hyeok Kim),정한석(Han-Seok Jeong),최명호(Myeong-Ho Choi) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7
피복 손상으로 주변 도전체를 통해 누전되었을 때 그 주변의 자장을 검출하여 누전여부를 판단할 수 있는 장치 개발을 하고자 한다. 우선 표면 누전에 의한 전류의 흐름을 조사하고, 전류에 의한 자장을 검출하기 위해 센서를 제작한다. 코어는 요크타입을 적용하였으며, 코일은 0.5㎜ 동선을 4,000회 감았다. 실험환경은 전선피복 손상에 의한 금속표면에 누전되는 상황을 모의하였으며, 부하는 40W, 400W, 1,400W를 적용하였다. 센서는 표면에 발생되는 자장을 검출할 수 있도록 2축으로 구성하였으며, 전선 주변 및 누전된 금속 표면에서 거리변화 및 각도 변화에 따른 자장을 검출하였다.
ITO/Alq₃/Al 구조 유기 발광 소자의 유전분극 현상의 연구
吳容喆(Yong-Cheul Oh),申喆基(Cheol-Gi Shin),金忠爀(Chung-Hyeok Kim) 대한전기학회 2008 전기학회논문지 Vol.57 No.1
We have investigated dielectric polarization in organic light-emitting diodes using 8-hydroxyquinoline aluminum (Alq₃) as an electron transport and emissive material. We analyzed the dielectric polarization of organic light-emitting diodes using characteristics of impedance and equivalent circuit of ITO/Alq₃/Al. Impedance characteristics was measured complex impedance Z and phase θ in the frequency range of 1×40 ㎐ to 1×10? ㎐. We obtained complex electrical conductivity, dielectric constant, and loss tangent (tanδ) of the device at room temperature. And, we obtained the equivalent circuit of ITO/Alq₃/Al through analyzing dielectric constant and dielectric loss tangent. From these analyses, we could interpret a conduction mechanism and dielectric polarization.
김기준,오용철,이경섭,정한석,김탁용,최미희,송민영,신철기,김진사,Kim, Ki-Joon,Oh, Yong-Cheul,Lee, Kyeong-Seob,Jung, Han-Seok,Kim, Tag-Yong,Choi, Mi-Hui,Soung, Min-Yeong,Shin, Cheol-Gi,Kim, Jin-Sa 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.2
We use the electrical energy and it is essential energy in modern life, but we lay cable underground due to the issue for environment and safety. Safety for worker is still insufficient for the development of safety equipment and related research has been focused on the cable lifetime diagnosis at underground cable work. I have to develop live line detector around the magnetic field were investigated at underground cable. In this paper, we were investigated by variation of coil turns and load due to detection of magnetic field at lines around. And detected value of developing products compared with measured value of milli-gauss meter. As a result, the value of the number of coil turns was found to be proportional to the measured value. But turn-numbers increase showed that the weak noise. I could be confirmed that sensor showed the optimum value from 4,000 to 5,0000.
김진사(Jin-sa Kim),오용철(Yong-Cheul Oh),신철기(Cheol-gi Shin),배덕권(Duck-Kweon Bae) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
The SBN thin films are deposited on Pt-coated electrode(Pt/Ti/SiO₂/Si) using RF sputtering method at various deposition conditions. The capacitance of SBN thin films were increased with the increase of Ar/O₂ ratio and RF power, respectively. Also, The capacitance of SBN thin films were increased with the increase of deposition temperature.
金鎭士(Jin-Sa Kim),吳容喆(Yong-Cheol Oh) 대한전기학회 2006 전기학회논문지C Vol.55 No.12
The (Sr<SUB>0.85</SUB>Cao<SUB>0.15</SUB>)TiO₃(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[℃]. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[Å/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at 600℃.
김진사(Jin-Sa Kim),박건호(Geon-Ho Park),신철기(Cheol-Gi Shin),오용철(Yong-Cheul Oh),김충혁(Chung-Hyeok Kim) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.7
The SBN thin films were deposited on Si substrate using RF magnetron sputtering method. And the SBN thin films were annealed at 600~800[℃]. The surface rougness showed about 0.42[nm] in annealed thin film at 650 [℃]. The Leakage Current Density showed a stable value within 10??[A/㎠] in voltage ranges of -5~+5[V].