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Xinyi Fan,라벨로 마테우스,Yifan Hu,Muhammad Quddamah Khokhar,김영국,이준신 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.2
Recently, the focus of solar cell research has shifted from Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells to Heterojunction with Intrinsic Thin Layer solar cells. Compared to the already mass-produced Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells, the passivation with the intrinsic thin layer of amorphous on the wafer surface, the continuous improvement of the emitter thickness, and doping concentration have enabled Heterojunction with Intrinsic Thin Layer solar cells to obtain open-circuit voltage above 750 mV while maintaining a short circuit current density of ~ 40 mA/cm2 and an Fill Factor of ~ 84%. This leads to a theoretical conversion efficiency of 27.5% (monolithic) to 29% (tandem), which is much higher than the theoretical final conversion efficiency of ~ 24.5% achieved by Passivated Emitter and Rear Cell and Passivated Emitter and Rear Locally-diffused solar cells at a short-circuit voltage of 706 mV. To further approach the theoretical maximum efficiency, improvements, and optimization of the fabrication process, as well as change in material of the front emitter layer and thus the band gap, conductivity, and defect density can be adopted. Efficiencies of up to 28.27% were achieved using hydrogenated nanocrystalline silicon with a bandgap of 1.9 eV as the emitter layer.
Zhang, Xinyi Cindy,Xu, Chang,Mitchell, Ryan M,Zhang, Bo,Zhao, Derek,Li, Yao,Huang, Xin,Fan, Wenhong,Wang, Hongwei,Lerma, Luisa Angelica,Upton, Melissa P,Hay, Ashley,M?ndez, Eduardo,Zhao, Lue Ping Stockton Press 2013 Neoplasia Vol.15 No.12
<P>Head and neck squamous cell carcinoma (HNSCC) is characterized by significant genomic instability that could lead to clonal diversity. Intratumor clonal heterogeneity has been proposed as a major attribute underlying tumor evolution, progression, and resistance to chemotherapy and radiation. Understanding genetic heterogeneity could lead to treatments specific to resistant and metastatic tumor cells. To characterize the degree of intratumor genetic heterogeneity within a single tumor, we performed whole-genome sequencing on three separate regions of an human papillomavirus (HPV)-positive oropharyngeal squamous cell carcinoma and two separate regions from one corresponding cervical lymph node metastasis. This approach achieved coverage of approximately 97.9% of the genome across all samples. In total, 5701 somatic point mutations (SPMs) and 4347 small somatic insertions and deletions (indels)were detected in at least one sample. Ninety-two percent of SPMs and 77% of indels were validated in a second set of samples adjacent to the discovery set. All five tumor samples shared 41% of SPMs, 57% of the 1805 genes with SPMs, and 34 of 55 cancer genes. The distribution of SPMs allowed phylogenetic reconstruction of this tumor's evolutionary pathway and showed that the metastatic samples arose as a late event. The degree of intratumor heterogeneity showed that a single biopsy may not represent the entire mutational landscape of HNSCC tumors. This approach may be used to further characterize intratumor heterogeneity in more patients, and their sample-to-sample variations could reveal the evolutionary process of cancer cells, facilitate our understanding of tumorigenesis, and enable the development of novel targeted therapies.</P>
Review of the Silicon Oxide and Polysilicon Layer as the Passivated Contacts for TOPCon Solar Cells
Mengmeng Chu,Muhammad Quddamah Khokhar,Hasnain Yousuf,Xinyi Fan,한승용,김영국,Suresh Kumar Dhungel,이준신 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.3
p-type Tunnel Oxide Passivating Contacts (TOPCon) solar cell is fabricated with a poly-Si/SiOx structure. It simultaneously achieves surface passivation and enhances the carriers’ selective collection, which is a promising technology for conventional solar cells. The quality of passivation is depended on the quality of the tunnel oxide layer at the interface with the c-Si wafer, which is affected by the bond of SiO formed during the subsequent annealing process. The highest cell efficiency reported to date for the laboratory scale has increased to 26.1%, fabricated by the Institute for Solar Energy Research. The cells used a p-type float zone silicon with an interdigitated back contact (IBC) structure that fabricates poly-Si and SiOx layer achieves the highest implied open-circuit voltage (iVoc) is 750 mV, and the highest level of edge passivation is 40%. This review presentsan overview of p-type TOPCon technologies, including the ultra-thin silicon oxide layer (SiOx) and poly-silicon layer (poly-Si), as well as the advancement of the SiOx and poly-Si layers. Subsequently, the limitations of improving efficiency are discussed in detail. Consequently, it is expected to provide a basis for the simplification of industrial mass production.
A Review on p-Type Tunnel Oxide Passivated Contact (TOPCon) Solar Cell
Muhammad Quddamah Khokhar,Hasnain Yousuf,정성진,김성헌,Xinyi Fan,김영국,Suresh Kumar Dhungel,이준신 한국전기전자재료학회 2023 Transactions on Electrical and Electronic Material Vol.24 No.3
The primary objectives of solar cell technology are high efficiency, long durability, mass manufacturing, cost effectiveness, and the use of environmentally benign components. Among high-efficiency crystalline silicon (c-Si)-based solar cell types, tunnel oxide passivated contact (TOPCon) solar cells have attracted particular attention because of a multitude of advantages. These include easy processing, high efficiency potential, and availability of raw materials. Due to cheaper wafer pricing, easily compatible with advanced and long-tested PERC solar cell manufacturing process, fabrication of TOPCon solar cells starting with p-type c-Si wafers are significantly more demanding from the standpoint of mass production of solar module. If cutting-edge high-efficiency technologies were used in industrial production, the quality of the p-type wafer may eventually become a bottleneck. Recent production lines elsewhere have developed p-type TOPCon solar cells with 25.19% conversion efficiency using monocrystalline Czochralski (CZ) c-Si wafers. This effectively proves the outstanding viability of p-type TOPCon solar cells for an industrial scale. This review article comprehensively discusses the history of high-efficiency p-type TOPCon solar cells, advancement in various areas to increase effective cell performance, state of commercialization, as well as potential future research opportunities and challenges.
Recent Development of P-Tunnel Oxide Passivated Contact Solar Cells
( Yang Zhao ),( Muhammad Quddamah Khokhar ),( Hasnain Yousuf ),( Xinyi Fan ),( Seungyong Han ),( Youngkuk Kim ),( Suresh Kumar Dhungel ),( Junsin Yi ) 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.4
Crystalline silicon solar cells have attracted great attention for their various advantages, such as the availability of raw materials, high-efficiency potential, and well-established processing sequence. Tunnel oxide passivated contact (TOPCon) solar cells are widely regarded as one of the most prospective candidates for the next generation of high-performance solar cells because an efficiency of 26% has been achieved in small-area solar cells. Compared to n-type TOPCon solar cells, the photo conversion efficiency (PCE) of p-type TOPCon is slightly higher. The highest PCEs of p-type TOPCon and n-type TOPCon solar cells are 26.0% and 25.8%, respectively. Despite the highest efficiency in small-area cells, limited progress has been achieved in p-type TOPCon solar cells for large are due to their lower carrier lifetime and inferior surface passivation with the boron-doped c-Si wafer. Nevertheless, it is of great importance to promoting the p-type TOPCon technology due to its lower price and well-established manufacturing procedures with slight modifications in the PERC solar cells production lines. The progress in different approaches to increase the efficiencies of p-type TOPCon solar cells has been reported in this review article and is expected to set valuable strategies to promote the passivation technology of p-type TOPCon, which could further increase the efficiency of TOPCon solar cells.
Fucheng Wang,산얄 심피,최지원,조재웅,Yifan Hu,Xinyi Fan,Suresh Kumar Dhungel,이준신 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.3
As a potential alternative to flash memory, HfO2/Al2O3 stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO2/Al2O3 stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO2 layer, the memory window of the 5-layered stack increased by 152.4% after O2 annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO2/Al2O3 stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O2 and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.