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폴리아세탈의 입자유동베드 가공에서 회전속도와 공기 유량이 재료제거 특성에 미치는 영향
장양제(Yangjae Jang),김태경(Taekyoung Kim),황현덕(Heondeok Hwang),서준영(Joonyoung Seo),이다솔(Dasol Lee),이현섭(Hyunseop Lee) 한국트라이볼로지학회 2017 한국윤활학회지(윤활학회지) Vol.33 No.5
Abrasive fluidized bed machining (AFBM) is similar to general abrasive fluidized machining (AFM) in that it can perform polishing of the outer and inner surfaces of a 3-dimensional shape by the flow of particles. However, in the case of AFM, the shear force generated by the flow of the particles causes material removal, while in AFBM, the abrasive particles are suspended in the chamber to form a bed. AFBM can be used for deburring, polishing, edge contouring, shot peening, and cleaning of mechanical parts. Most studies on AFBM are limited to metals, and research on application of AFBM to plastic materials has not been performed yet. Therefore, in this study, we investigate the effect of rotating speed of the specimen and the air flow rate on the material removal characteristics during AFBM of polyacetal with a horizontal AFBM machine. The material removal rate (MRR) increases linearly with increase of the rotating speed of the main shaft because of the shear force between the particles of the fluidized bed and the rotation of the workpiece. The reduction in surface roughness tends to increase as the rotating speed of the main shaft increases. As the air flow rate increases, the MRR tends to decrease. At a flow rate of 70 L/min or more, the MRR remains almost constant. The reduction of the surface roughness of the specimen is found to decrease with increasing air flow rate.
Self-Conditioning을 이용한 고정입자패드의 텅스텐 CMP
박범영(Boumyoung Park),김호윤(Hoyoun Kim),서헌덕(Heondeok Seo),정해도(Haedo Jeong) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.4
The chemical mechanical polishing(CMP) is necessarily applied to manufacturing the dielectric layer<br/> and metal line in the semiconductor device. The conditioning of polishing pad in CMP process<br/> additionally operates for maintaining the removal rate, within wafer non-uniformity, and wafer to wafer<br/> non-uniformity. But the fixed abrasive pad(FAP) using the hydrophilic polymer with abrasive that has<br/> the swelling characteristic by water owns the self-conditioning advantage as compared with the general<br/> CMP. FAP also takes advantage of planarity, resulting from decreasing pattern selectivity and defects<br/> such as dishing due to the reduction of abrasive concentration. This paper introduces the manufacturing<br/> technique of FAP. And the tungsten CMP using FAP achieved the good conclusion in point of the<br/> removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary<br/> with the pad life-time.
CMP시 SiO<sub>2</sub> 슬러리의 마찰 특성과 연마결과에 관한 연구
이현섭,박범영,서헌덕,정재우,정석훈,정해도,Lee Hyunseop,Park Boumyoung,Seo Heondeok,Jung Jaewoo,Jeong Sukhoon,Jeong Haedo 대한기계학회 2005 大韓機械學會論文集A Vol.29 No.7
The effects of mechanical parameters on the characteristics of chemical mechanical polishing(CMP) can be directly evaluated by friction force. The piezoelectric quartz sensor for friction force measurement was installed, and friction force could be detected during CMP process. Furthermore, friction energy can be calculated by multiplying relative velocity by integration of the friction force throughout the polishing time. $SiO_2$ slurry for interlayer dielectric(ILD) CMP was used in this experiment to consider the relation of frictional characteristics and polishing results. From this experiment, it is proven that the friction energy is an essential factor of removal rate. Also, the friction force is related to removal amount per unit length(dH/ds) and friction energy has corelation to the removal rate(dH/dt) and process temporature. Moreover, within wafer non-unifornity(WIWNU) is related to coefficient of friction because of the mechanical moment equilibrium. Therefore, the prediction of polishing result would be possible by measuring friction force.
이현섭,박범영,서헌덕,박기현,정해도,Lee, Hyunseop,Park, Boumyoung,Seo, Heondeok,Park, Kihyun,Jeong, Haedo 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.4
Stick-slip friction is one of the material removal mechanisms in tribology. It occurs when the static friction force is larger than the dynamic friction force, and make the friction curve fluctuated. In the friction monitoring of chemical mechanical polishing(CMP), the friction force also vibrates just as stick-slip friction. In this paper, an attempt to show the similarity between stick-slip friction and the friction of CMP was conducted. The prepared hard pa(IC1000/Suba400 stacked/sup TM/) and soft pad(Suba400/sup TM/) were tested with SiO₂ slurry. The friction force was measured by piezoelectric sensor. According to this experiment, it was shown that as the head and table velocity became faster, the stick-slip time shortened because of the change of real contact area. And, the gradient of stick-slip period as a function of head and table speed in soft pad was more precipitous than that of hard one. From these results, it seems that the fluctuating friction force in CMP is stick-slip friction caused by viscoelastic behavior of the pad and the change of real contact area.
정석훈,서헌덕,박범영,박재홍,박성민,정문기,정해도,김형재,Jeong, Sukhoon,Seo, Heondeok,Park, Boumyoung,Park, Jaehong,Park, Seungmin,Jeong, Moonki,Jeong, Haedo,Kim, Hyoungjae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
This study introduces Electro-chemical Mechanical Deposition(ECMD) lot making Cu interconnect. ECMD is a novel technique that has ability to deposit planar conductive films on non-planar substrate surfaces. Technique involves electrochemical deposition(ECD) and mechanical sweeping of the substrate surface Preferential deposition into the cavities on the substrate surface nay be achieved through two difference mechanisms. The first mechanism is more chemical and essential. It involves enhancing deposition into the cavities where mechanical sweeping does not reach. The second mechanism involves reducing deposition onto surface that is swept. In this study, we demonstrate ECMD process and characteristic. We proceeded this experiment by changing of distribution of current density on divided water area zones and use different pad types.
박범영,이현섭,김형재,서헌덕,김구연,정해도,Park, Boumyoung,Lee, Hyunseop,Kim, Hyoungjae,Seo, Heondeok,Kim, Gooyoun,Jeong, Haedo 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.10
Chemical mechanical polishing (CMP) process was studied in terms of tribology in this paper. CMP performed by the down force and the relative motion of pad and wafer with slurry is typically tribological system composed of friction, wear and lubrication. The piezoelectric quartz sensor for friction force measurement was installed and the friction force was detected during CMP process. Various friction signals were attained and analyzed with the kind of pad, abrasive and abrasive concentration. As a result of experiment, the lubrication regime is classified with ηv/p(η, v and p; the viscosity, relative velocity and pressure). The characteristics of friction and material removal mechanism is also different as a function of the kind of abrasive and the abrasive concentration in slurry. Especially, the material removal per unit distance is directly proportional to the friction force and the non~uniformity has relation to the coefficient of friction.