태양전지 개발을 위한 CuInSe₂ 단결정 박막 성장과 특성

홍광준(K.J. Hong),이상열(S.Y. Lee),유상하(S.H. You),정준우(J.W. Jeong),백형원(H.W. Baek),진윤미(Y. M. Jin),김소형(S. H. Kim),문종대(J.D. Moon),김혜숙(H.S. Kim) 한국태양에너지학회 2001 한국태양에너지학회 학술대회논문집 Vol.- No.-

태양 전지 개발을 위한 CuGaSe₂ 단결정 박막성장과 특성에 관한 연구

홍광준(K.J. Hong),이상열(S.Y. Lee),유상하(S.H. You),정준우(J.W. Jeong),백형원(H.W. Baek),진윤미(Y. M. Jin),김소형(S. H. Kim),문종대(J.D. Moon),김혜숙(H.S. Kim) 한국태양에너지학회 2001 한국태양에너지학회 학술대회논문집 Vol.- No.-

HWE 방법에 의한 CdSe 박막 성장과 광전기적 특성

홍광준,이관교,이상열,유상하,신용진,서상석,정준우,정경아,신영진,정태수,김택성,문종대,김혜숙 ( K . J . Hong,K . K . Lee,S . Y . Lee,S . H . You,Y . J . Shin,S . S . Suh,J . W . Jeong,K . A . Jeong,Y . J . Shin,T . S . Jeong,T . S . Kim,J . D 한국센서학회 1997 센서학회지 Vol.6 No.4

The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are 600? and 430 respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(γ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.39 X 10^7, the MAPD of 335mW, and the rise and decay time of l0ms and 9.5ms, respectively

Hot wall epitaxy방법에 의한 AgInS₂ 박막의 성장과 광전류 특성

김혜숙,홍광준,정준우,방진주,김소형,정태수,박진성,Kim, H.S.,Hong, K.J.,Jeong, J.W.,Bang, J.J.,Kim, S.H.,Jeong, T.S.,Park, J.S. 한국재료학회 2002 한국재료학회지 Vol.12 No.7

A silver indium sulfide ($AgInS_2$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_2$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_2$ was investigated by means of the photocurrent measurement. The crystal field splitting, $\Delta_{cr}$ , and the spin orbit splitting, $\Delta_{so}$ , have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.d.

펄프 몰드식 육묘포트의 성형조건 및 수분 흡습에 따른 굴곡 하중 특성 분석

송대빈(D-B Song),정준우(J-W. Jeong),김철환(C-H Kim),허무룡(M-R. Huh) 한국펄프·종이공학회 2009 펄프.종이기술 Vol.41 No.4

$CuInTe_2$ 단결정 성장과 특성연구(II)

유상하,홍광준,이상렬,신용진,이관교,서상석,김승욱,정준우,신영진,정태수,신현길,김택성,문종대,You S.H.,Hong K.J.,Lee S.Y.,Shin Y.J.,Lee K.K.,Suh S.S.,Kim S.U.,Jeong J.W.,Shin Y.J.,Jeong T.S.,Shin B.K.,Kim T.S.,Moon J.D. 한국결정학회 1997 韓國結晶學會誌 Vol.8 No.1

[ $CuInTe_2$ ] 다결정은 수평전기로에서 합성하고, $CuInTe_2$ 단결정은 수직 Bridgman 방법으로 성장시켰다. $CuInTe_2$ 단결정의 c축에 수직 및 평행한 시료의 광전도도와 광발광특성을 293K에서 20 K의 온도영역에서 측정하였다. 측정된 광전류 봉우리로부터 구한 c축에 수직 및 평행한 시료의 에너지 띠 간격은 상온에서 각각 0.948 eV와 0.952 eV였다. 광전류 봉우리와 광발광 봉우리의 에너지차는 포논에너지이며 상온에서 c축에 수직 및 평행한 시료의 에너지차는 각각 22.12 meV와 21.4 meV였다. 또한 광전류 스펙트럼으로부터 시료의 spin-orbit 상호작용과 결정장 상호작용에 의한 가전자대의 갈라짐 ${\Delta}cr$과 ${\Delta}so$는 각각 0.046, 0.014 eV였다. [ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.

HWE(Hot Wall Epitaxy)에 의한 CuGaSe₂/GaAs epilayer 성장과 광전기적 특성

홍광준,정준우,백형원,정경아,방진주,진윤미,김소형 조선대학교 기초과학연구소 2001 自然科學硏究 Vol.24 No.-

수평 전기로에서 CuGaSe₂ 다결정을 합성하여 HWE(Hot Wall Epitaxy) 방법으로 CuGaSe₂/GaAs epilayer를 반절연성 GaAs(100)기판 위에 성장하였다. CuGaSe₂/GaAs epilayer는 증발원의 온도를 610℃, 기판의 온도를 450℃로 하였다. CuGaSe₂/GaAs epilayer의 결정성의 조사에서 20K에서 광발광(photoluminescence) 스펙트럼이 672.6nm(1.8432eV)에서 엑시톤 방출 스펙트럼이 가장 강하게 나타났으며, 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 138 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 4.87×10^(23) electron/m³, 1.29×10² m²/v-s 였다. CuGaSe₂/GaAs epilayer의 광전류 단파장대 봉우리들로부터 20K에서 측정된 ΔCr(Crystal field splitting)은 약 0.09 eV ΔSo(spin orbit coupling)는 0.2498 eV였다. 20K의 광발광 측정으로부터 고품질의 결정에서 볼 수 있는 자유 엑시톤 (free exciton)과 매우 강한 세기의 중성 받개(acceptor) 구속 엑시톤 (bound exciton)등의 피크가 관찰되었다. 이때 받개 구속 엑시톤 (bound exciton)의 반치폭과 결합에너지는 각각 8meV와 93.2meV 였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 466meV였다. The stochiometric mixture of evaporating materials for the CuGaSe₂/GaAs epilayer was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe₂, it was found tetragonal structure whose lattice constant a_(0) and c_(0) were 5.615 Å and 11.025 Å, respectively. To obtain the CuGaSe₂/GaAs epilayer, CuGaSe₂ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 ℃ and 450 ℃ respectively. The crystalline structure of CuGaSe₂/GaAs epilayer was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. From the photocurrent spectra by illumination of polarized light of the CuGaSe₂/GaAs epilaye. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900 eV and 0.2498 eV, respectively. From the photoluminescence measurement of CuGaSe₂/GaAs epilayer, we observed free excition(Ex) observable only in high quality crystal and neutral acceptor-bound exciton (A^(0); X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 93.2 meV, respectively. By Haynes rule, an activation energy of impurity was 466 meV.

HWE(Hot Wall Epitaxy)에 의한 ZnIn_2S_4 박막 성장과 광전도 특성

홍광준,이관교,정준우,정경아,방진주,장현규,문종대,김혜숙 조선대학교 기초과학연구소 1999 自然科學硏究 Vol.22 No.1

HWE 방법에 의해 ZnIn_2S_4 박막을 Si(00) 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 610℃, 450℃로 하여 성장시킨 ZnIn_2S_4 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 245 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자농도의 1n n 대 1/T에서 구한 활성화에너지는 0.17eV로 측정되었다. Hall 이동도의 온도 의존성은 30K에서 100K까지는 불순물산란에 기인하고, 100K에서 293K까지는 격자산란에 기인한것으로 고찰되었다. 광전도셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. S 증기분위기에서 열처리한 광전도 셀의 경우, 감도(??)는 0.99, pc/dc은 1.37x10^7, 그리고 최대 허용소비전력(MAPD)은 336mW, 오름시간(rise time)은 9ms, 내림시간(decay time)은 9.8ms로 가장 좋은 광전도 특성을 얻었다. The ZnIn_2S_4 thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are 610℃ and 450℃ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 100K by impurity scattering and decreased in the temperature range 100K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(??), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapor compare with in Zn, In, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.37x10^7, the MAPD of 336mW, and the rise and decay time of 9ms and 9.8ms, respectively.

수정된 화학전이 NMR 영상법에 의한 수분과 지질의 비율 측정에 관한 연구

신용진,장차익,홍광준,유상하,이관교,양경승,백창현,김남수,정준우 조선대학교 기초과학연구소 1996 自然科學硏究 Vol.19 No.1

다양한 화학종(化學種)의 선택적인 핵자기공명(nuclear magnetic resonance, NMR) 영상(imaging)을 얻기 위한 몇몇 기술들이 가장 일반적인 Dixon's, CHESS, SECSI 등 3가지 방법들과 함께 발전해 왔다. 모든 화학전이 영상법(chemical shift imaging method)에 있어서 가장 큰 문제점은 정자기장의 균일성과 RF(radiofrequency) 코일에 대전된 시료가 인가되었을 때 나타나는 자기장의 찌그러짐이다. 만약 자기장의 shimming이 없다면, 약 3.5ppm으로 분리된 수분(water)과 지질(fat)의 선택적 양성자 영상을 얻는데 위 세 가지 방법들은 이용될 수 없다. 2.5ppm에서 3.5ppm의 선폭(linewidth)을 가진 시료(phantom)를 이용한 실험으로 위의 세 가지 기술과 새로운 화학전이 영상기술을 정량적으로 분석할 수 있었다. 본 연구에서는 선택적인 포화(saturation)와 재집중(refocusing) pulse가 포함된 새로운 화학전이 영상기술(modified CHESS+SECSI technique)이 다양한 시료에서 수분과 지질의 정량적 비율을 측정하는데 이용될 수 있도록 개발되었다. There are several methods developed to achieve selective NMR image of differing chemical species with the three most popular being Dixon's, CHESS, and SECSI, A major problem common to all chemical shift imaging methods is the uniformity of the static magnetic field and distortions introduced when RF coils are loaded with a conducting specimen. Without magnetic field shimming, these methods cannot be used to selectively image protons in fat and water which are separated by approximately 3.5ppm. Experiments with a phantom, with linewidths of 2.5 to 3.5ppm, were quantitatively evaluated for the above three methods and a new chemical shift imaging method. In this study the new chemical shift imaging method (modified CHESS+SECSI technique) which included a selective saturation and refocusing pulse, was developed to determine the ratio of water and fat in different samples.