태양 전지용 CaAl₂Se₄: Co 단결정 박막 성장과 태양 전지로의 응용

방진주,홍광준,Bang, Jin-Ju,Hong, Kwang-Joon 한국태양에너지학회 2018 한국태양에너지학회 논문집 Vol.38 No.1

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

자녀기르난방법

방진주 신학지남사 1925 신학지남 Vol.7 No.2

뜨거운 곁쌓기 법에 의해 성장된 MgGa2Se4 단결정 박막의 열처리 효과

방진주 ( Jin Ju Bang ),김혜정 ( Hye Jeong Kim ),박향숙 ( Hwang Seuk Park ),강종욱 ( Jong Wuk Kang ),홍광준 ( Kwang Joon Hong ) 한국센서학회 2014 센서학회지 Vol.23 No.1

The evaporating materials for MgGa2Se4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa2Se4 compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were 610oC and 400oC, respectively.The source and substrate temperatures were 610oC and 400oC, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the MgGa2Se4 obtained from the absorption spectra was well described by the Varshni`s relation, Eg(T) = 2.34 eV(8.81 10-4 eV/ K)T2/(T+251 K). After the as-grown MgGa2Se4 single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of MgGa2Se4 single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of VMg, VSe obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted MgGa2Se4 single crystal thin films to an optical n-type. Also, we confirmed that Ga in MgGa2Se4/GaAs did not form the native defects because Ga in MgGa2Se4 single crystal thin films existed in the form of stable bonds.

태양 전지용 CaAl₂Se₄: Co 단결정 박막 성장과 태양 전지로의 응용

방진주(Bang Jin-Ju),홍광준(Hong Kwang-Joon) 한국태양에너지학회 2018 한국태양에너지학회 논문집 Vol.38 No.1

The stoichiometric mixture of evaporating materials for the CaAl₂Se₄: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CaAl₂Se₄, it was found orthorhomic structure whose lattice constant a0, b0 and c0 were 6.4818, 11.1310 Å and 11.2443 Å, respectively. To obtain the CaAl₂Se₄: Co single crystal thin film, CaAl₂Se₄: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were 600°C and 440°C respectively. The crystalline structure of CaAl₂Se₄: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the CaAl₂Se₄: Co obtained from the absorption spectra was well described by the Varshni"s relation, Eg(T) = 3.8239 eV - (4.9823 × 10-3 eV/K)T₂/(T + 559 K). The open-circuit voltage, short current density, fill factor ,and conversion efficiency of p-Si/ p-CaAl₂Se₄: Co heterojunction solar cells under 80 mW/cm² illumination were found to be 0.42 V, 25.3 mA/cm², 0.75 and 9.96%, respectively.

조선어와 한어 피동문의 명사구대비

류영록,방진주 길림성민족사무위원회 2000 중국조선어문 Vol.110 No.-

Hot Wall Epitaxy(HWE)법에 의한 ZnAl₂Se₄ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구

박향숙,방진주,이기정,강종욱,홍광준,Park, Hyangsook,Bang, Jinju,Lee, Kijung,Kang, Jongwuk,Hong, Kwangjoon 한국재료학회 2013 한국재료학회지 Vol.23 No.12

A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

Hot Wall Epitaxy(HWE)법에 의한 MgGa₂Se₄ 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구

김혜정,박향숙,방진주,강종욱,홍광준,Kim, Hyejeong,Park, Hwangseuk,Bang, Jinju,Kang, Jongwuk,Hong, Kwangjoon 한국결정성장학회 2013 韓國結晶成長學會誌 Vol.23 No.6

수평 전기로에서 $MgGa_2Se_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $MgGa_2Se_4$ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. $MgGa_2Se_4$단결정 박막의 성장 조건은 증발원의 온도 $610^{\circ}C$, 기판의 온도 $400^{\circ}C$였고 성장 속도는 $0.5{\mu}m/hr$였다. 이때 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 212 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. $MgGa_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293 K에서 10 K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap Eg(T)는 varshni공식에 따라 계산한 결과 $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$이었으며 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting energy ${\Delta}cr$값이 190.6 meV이며 spin-orbit energy ${\Delta}so$값은 118.8 meV임을 확인하였다. 10 K일 때 광전류 봉우리들은 n = 1, 27일때 $A_{1^-}$, $B_{1^-}$와 $C_{27}-exciton$ 봉우리임을 알았다. A stoichiometric mixture of evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34 eV-(8.81{\times}10^{-4}eV/K)T^2/(T+251K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $MgGa_2Se_4$ have been estimated to be 190.6 meV and 118.8 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $MgGa_2Se_4$/GaAs epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-}$, $B_{1^-}$exciton for n = 1 and $C_{27}-exciton$ peaks for n = 27.

ZnIn₂S₄단결정 박막의 성장과 광학적 특성

홍광준,유상하,방진주,김소형,여희숙,양혜정,김현수 경북대학교 센서기술연구소 2002 센서技術學術大會論文集 Vol.13 No.1

HWE(Hot Wall Epitaxy)에 의한 ZnIn_2S_4 박막 성장과 광전도 특성

홍광준,이관교,정준우,정경아,방진주,장현규,문종대,김혜숙 조선대학교 기초과학연구소 1999 自然科學硏究 Vol.22 No.1

HWE 방법에 의해 ZnIn_2S_4 박막을 Si(00) 기판 위에 성장시켰다. 증발원과 기판의 온도를 각각 610℃, 450℃로 하여 성장시킨 ZnIn_2S_4 박막의 이중 결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)값이 245 arcsec로 가장 작았다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자농도의 1n n 대 1/T에서 구한 활성화에너지는 0.17eV로 측정되었다. Hall 이동도의 온도 의존성은 30K에서 100K까지는 불순물산란에 기인하고, 100K에서 293K까지는 격자산란에 기인한것으로 고찰되었다. 광전도셀의 특성으로 spectral response, 최대 허용소비전력(MAPD), 광전류와 암전류(pc/dc)의 비 및 응답시간을 측정하였다. S 증기분위기에서 열처리한 광전도 셀의 경우, 감도(??)는 0.99, pc/dc은 1.37x10^7, 그리고 최대 허용소비전력(MAPD)은 336mW, 오름시간(rise time)은 9ms, 내림시간(decay time)은 9.8ms로 가장 좋은 광전도 특성을 얻었다. The ZnIn_2S_4 thin films were grown on the Si(100) wafers by a hot wall epitaxy method(HWE). The source and substrate temperature are 610℃ and 450℃ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 100K by impurity scattering and decreased in the temperature range 100K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(??), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapor compare with in Zn, In, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.37x10^7, the MAPD of 336mW, and the rise and decay time of 9ms and 9.8ms, respectively.

Point-Defect Study of CuAlSe2(112) Layers Post-Annealed in Various Ambient

홍광준,윤창주,김혜숙,방진주,문종대,하종호,정태수 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.5I

High quality CuAlSe2(112)/GaAs(100) heteroepitaxial layers were grown by using the hot wall epitaxy method. The optical absorption measurement showed the temperature dependence of the energy band gap on the CuAlSe2 layer to be Eg(T) = 2.8382 eV . (8.68 × 10.4 eV/K)T2/(155 + T). After the as-grown CuAlSe2 layer was annealed in Cu, Se, and Al atmospheres, the origin of point defects in the CuAlSe2 layer were investigated by using photoluminescence (PL) at 10 K. Point defects originating from VCu, VSe, Cuint, and Seint were obtained from the PL measurements and were classified as a donor or acceptor types. These PL results also led us to confirm that the CuAlSe2 layer had obviously converted into an n-type after the Cu atmosphere treatment. Finally, we found that the Al in the CuAlSe2 layer did not form native defects because the Al existed in the form of stable bonds in the CuAlSe2 layer.or.