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HWE 방법에 의한 CdSe 박막 성장과 광전기적 특성
신영진,홍광준,이상열,유상하,서상석,문종대,김택성,정태수,신용진,이관교,김혜숙,정준우,정경아 한국센서학회 1997 센서학회지 Vol.6 No.4
The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are 600� and 430 respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(γ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.39 X 10^7, the MAPD of 335mW, and the rise and decay time of l0ms and 9.5ms, respectively
Chemical Bath Deposition 방법으로 제작한 CdSe 박마의 특성
신영진,홍광준,이상열,유상하,서상석,문종대,신현길,김택성,송정훈,유기수,정태수 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in N₂ gas at 450℃ it was found hexagonal structure whose lattice parameters a_o and c_o were 4.302 A and 7.014 A, respectively. Its grain size was about 0.3 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33 K and 200 K, and by polar optical scattering at temperature range of 200 K and 293 K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
문종대,정태수,신현길,김택성,이충일,홍광준,이상열,서상석,신용진,김혜숙,윤은희,김승욱,전승룡,유상하,이관교,박향숙,신영진 한국센서학회 1995 센서학회지 Vol.4 No.3
Polycrystalline Cd_(1-x)Zn_xS thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometor in order to study Cd_(1-x)Zn_xS polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in N₂ gas at 550 ℃. It was found hexagonal structure which had the lattice constant a_o = 4.1364Å, c_o=6.7129Å in CdS and a_o = 3.8062Å, c_o = 6.2681 Å in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample
CBD 방법에 의한 CdS1-xSex 박마의 열처리에 따른 광전기적 특성
문종대,정태수,신현길,김택성,신영진,홍광준,유상하,서상석,최승평,이상열,신용진,이관교,김혜숙,윤은희,김승욱,전승룡 한국센서학회 1995 센서학회지 Vol.4 No.1
Polycrystalline CdS_(1-x)Se_x, thin films were grown on ceramic substrate using a chemical bath deposition method. They ere annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS_(1-x)Se_x, polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS. CdSe samples annealed in gas at a 0 it was found hexagonal structure which had the lattice constant a_0=-4.1364Å, c_0=6.7129Å in CdS and a_0=4.3021Å, c_0=7.3021Å in CdSe. respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(γ), maximum allowable power dissipation and response time on these samples.
강자성체 박막(Co-Ni)의 자기-저항효과에 관한 연구(2)
손대락,장충근,유중렬,남선우 한국센서학회 1994 센서학회지 Vol.3 No.1
Grid type 70Ni-30Co thin films on slide glass at 250℃ has been fabricated to develope. From fabricated sensors using above process, we investigated the relation of temperature, resistivity, line width to magnetoresistance and we obtained the following results after observation of coercive force, saturated magnetization, maxium usable sensitivity, duty time, slew rate, white noise, resolution of the sensors. We confirmed that the 600Å thin film at 250℃ formed crystalized magnetic anisotropy spontanernisly and the sensor using the thin film had capability of detecting magnetic field with sensitivity of 230 nT. In these devices, the magnetoresistance change was increased linearly in ±10 Oe range, and the magnetoresistance effect was increased when the ratio between line width and length was increased. When the devices was soldered using indium, the temperature-resistivity coefficient showed 8 X 10^(-3)/deg and increased during the specific properties as magnetic field sensor were weakened. In this studies, the coercive forces of the films were about 5.1 A/cm and saturated magnetizations were 0.64 T, and the delay time in these devises was 5 ㎲ and slew rate showed 0.39 Oe/us and white noise was -120 dB.
건식 열화처리가 FRP 의 표면 열화와 유전특성에 미치는 영향
이덕출,이백수,정의남,유도현,김종택 한국산업안전학회 1998 한국안전학회지 Vol.13 No.3
In this paper, we investigated the change of wettability, surface potential decay and dielectric properties caused by ultraviolet-treated, thermal-treated and discharge-treated FRP(fiber reinforced plastics) respectively for finding out: the influence of dry treatments effected to electrical characteristics on the surface of polymer composites. For the change of wettability, the contact angle of thermal-treated specimen with the high temperature of 200℃ increased. But that of UV-treated and discharge- treated specimen decreased. The characteristic of surface potential decay shows the tendency of the remarkable decrease on UV-treated and discharge-treated specimens, but no difference on thermal-treated specimen compared with untreated one. Also, for the dielectric properties, it shows the increase at large on the treated specimens and especially, the remarkable increase on thermal-treated one.
Hole 의 Nonrandomness 를 고려한 격자 모델
유성식,이철수 고려대학교 공학기술연구소 1990 고려대학교 생산기술연구소 생기연논문집 Vol.26 No.1
Okada and Nose applied the quasichemical approximation proposed by Guggenheim to the hole theory with fixed cell volume, but they did not obtain closed form expressions. ft was the objective of this work to establish an EOS and related thermodynamic quantities for mixtures by expanding, the Helmholtz energy by Taylor series in the energy parameter. This model was applied to pure supercritical solvent widely used, and calculated PVT behavior was in good agreement with data.
경인지역 군수품 제조업체의 안전관리실태와 대책에 관한 연구
김용수,태순호,유삼인 한국산업안전학회 1999 한국안전학회지 Vol.14 No.3
Our government has been continuously making an effort to improve safety management and prevent accidents in small-to-medium sized enterprises, but the accidents are still happening. Since there hasn't been a study on the actual state of safety management for the munitions manufacturing industry so far, this paper aims to investigate and analyze the actual state of the munitions manufacturing companies in Kyung-In area and it also shows the countermeasures of improvement.
CBD(Chemical Bath Deposition) 방법에 의한 ZAnSe 박막성장과 광전기적 특성
홍광준,유상하 한국센서학회 2001 센서학회지 Vol.10 No.1
The ZnSe sample grown by chemical bath deposition (CBD) method were annealed in Ar gas at 450 C. Using extrapolation method of X-ray diffraction pattern, it was found to have zinc blend structure whose lattice parameter a, was 5.6687 Å. From Hall effect, the mobility was likely to be decreased by impurity scattering at temperature range from 10 K to 150 K and by lattice scattering at temperature range from 150 K to 293K. The band gap given by the transmission edge changed from 2.7005 eV at 293 K to 2.8739 eV at 10 K. Comparing photocurrent peak position with transmission edge, we could find that photocurrent peaks due to excition electrons from valence band, Γ_8 and Γ_7 to conduction band Γ_6 were observed at photocurrent spectrum. From the photocurrent spectra by illumination of polarized light on the ZnSe thin film, we have found that values of spin orbit coupling splitting Δ so is 0.098 eV. From the PL spectra at 10 K, the peaks con-esponding to free hound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0612 eV and the dissipation energy of the donor -bound exciton and acceptor-bound exciton to be 0.0172 eV, 0.0310 eV, respectively.