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In-Surfactant Time Dependent Properties of InGaN/GaN Multiple Quantum-Wells Grown by Using MOCVD
김택성,J. Y. Park,정태수,강석일,심규환,홍창희 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4
The In-surfactant time-dependent properties were studied for InGaN/GaN multiple-quantum-well (MQW) structures grown by using metalorganic chemical vapor deposition (MOCVD). The structural properties of the InGaN/GaN MQWs were investigated by using high-resolution X-ray diffraction (HRXRD). For the InGaN/GaN MQWs, an increase in compressive strain was observed with increasing surfactant time from an analysis of the satellite peaks in the HRXRD. The peaks observed in the photocurrent spectra were preliminarily assigned to electron-heavy hole (e1-hh) and electron-light hole (e1-lh) fundamental excitionic transitions. The photoluminescence and the photocurrent peaks were red-shifted with increasing surfactant time.
Dry Etching of Germanium Using Inductively Coupled Ar/CCl₂F₂ /Cl₂Plasma
김택성,최상식,신미임,정태수,강수길,최철종,심규환 대한금속·재료학회 2010 ELECTRONIC MATERIALS LETTERS Vol.6 No.1
In this study, the etch characteristics of Ge are investigated using inductively coupled Ar/CCl₂F₂/Cl₂ plasmas. The etch rate, surface morphology and subtended angle obtained with different etching conditions are presented. The etch rate of Ge increases from 374 Å/min to 520 Å/min as the ICP power increases from 400 to 700W, whereas the etching rate of Ge decreases from 524 Å/min to 400 Å/min as CCl₂F₂ flow increases from 40 sccm to 80 sccm. In addition, the etching rate of Ge decreases from 467 Å/min to 400 Å/min as the Cl₂ flow increases from 0 sccm to 20 sccm. As the ICP power increases the subtended angle also increases. According to SEM imagery Ar/CCl₂F₂/Cl₂ ICP etching leads to the presence of carbon-based material in the form of large particles.
Comparison of InxGa1-xN/GaN MQWs Grown on GaN and Sapphire Substrates
김택성,C. -H Hong,J. Y. Park,T. V. Cuong 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.5I
InxGa1.xN/GaN multi quantum wells were grown on GaN and sapphire substrates by using metal-organic chemical-vapor deposition. A detailed analysis of the satellite peaks observed in the high-resolution X-ray diffraction patterns showed the presence of more compressive strain in InxGa1.xN/GaN MQWs grown on GaN substrates than in the MQWs grown on sapphire substrates. However, the optical investigations of the InxGa1.xN/GaN MQWs grown on GaN, showed a lower Stokes-like shift in photoluminescence than the same MQWs grown on sapphire did. The Stokes-like shift observed for MQWs is attributed to a potential fluctuation and the quantum confined Stark effect induced by the built-in internal field due to spontaneous and strain-induced piezoelectric polarizations.
Characterization of Germanium Dry Etching Using Inductively Coupled BCl3 Plasma
김택성,양하용,최상식,정태수,강석일,심규환 대한금속·재료학회 2009 ELECTRONIC MATERIALS LETTERS Vol.5 No.1
This study investigates the etch rates and the etched surface for Ge as a function of variations in the BCl3 flow rate, inductively coupled plasma (ICP) power and work pressure. It was found that the peak etch rate is at 40 sccm of a BCl3 flow rate. The etch rate of Ge decreases from 2370 to 1780 Å/min as the BCl3 flow rate increases from 40 to 80 sccm. The etch rate of Ge decreases from 2835 to 2094 Å/min as ICP power increases from 200 to 500 W, whereas the etching rate of Ge increases from 2370 to 2900 Å/min as work pressure increases from 10 to 50 mTorr. The etched surface has a very smooth surface appearance at parameters of a BCl3 flow rate of 40 sccm, 400 W of ICP power, and 10 of mTorr work pressure.
Inductively-Coupled BCl3/O2 Plasma Etching of Germanium
김택성,양하용,길연호,최상식,정태수,강석일,심규환 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.5
We have investigated the etch rates and the surface morphologies of Ge samples as a functions of the oxygen concentration in the BCl3/O2 gas mixture, the inductively coupled plasma (ICP) power, and working pressure. The etch rate of Ge was found to have a peak etch rate at ∼15 % O2. The etch rate of Ge decreases from 3700 to 1050 °A/min as the O2 concentration increases from 15 to 40 %. The etch rate of Ge increases as the ICP power increases, whereas the etching rate of Ge decreases as the working pressure increases. The Ge surface has a very rough surface morphology, which is due to the self-masking effect by the deposition of chlorine and oxygen-related materials in the form of micro particles. The etched surface has a very smooth appearance at a 400-W ICP power, a 200-W bias power, and a 10-mTorr working pressure. The compositions of the reaction layers on Germanium due to BCl3/O2 plasmas were obtained by using X-ray photoelectron spectroscopy (XPS). Chlorine and oxygen were detected on the surfaces of the etched Ge samples, and an analysis of the reactive layer showed the presence of Ge-Cl and Ge-O bonds.
Comparison of Germanium and Silicon Dry Etching by Using Inductively Coupled BCl3 Plasma
김택성,양하용,최상식,정태수,강석일,심규환 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.1
We have investigated the etch rates and the angle subtended for Ge and Si as a function of the BCl3 flow rate, the inductively coupled plasma (ICP) power, and the work pressure. The Ge etch rate is always greater than the Si etch rate, and the maxima of the Ge and Si etch rates are observed to be functions of the BCl3 flow rate. The peak etch rate is at 40 sccm BCl3 flow rate. The etch rate of Ge decreases from 2370 to 1780 °A/min as the BCl3 flow rate increases from 40 to 80 sccm. Also, the etch rate of Si decreases from 640 to 460 °A/min as the BCl3 flow rate increases from 20 to 80 sccm. The largest Ge/Si etch rate ratio is obtained for BCl3 flow rate of 60 sccm. The etch rate of Ge decreases from 2835 to 2094 °A/min as the ICP power increases from 200 to 500 W whereas the etching rate of Ge increases from 2370 to 2900 °A/min as the work pressure increases from 10to 50 mTorr. As the BCl3 flow, ICP power, and work pressure, increase the angle subtended also increases. Optical emission spectroscopy (OES) has been used to examine the gas phase species in the plasma, and emission from excited atomic B and Cl has been identified. The composition of the reaction layer on germanium due to the BCl3 plasmas has been obtained by using X-ray photoelectron spectroscopy (XPS). The reaction layer on germanium due to inductively coupled BCl3 plasma etching is found to be typically a very thin layer of the Ge-Cl and Ge-O.
Growth and Characterization of Si1-xGex QDs on Si/Si0.8Ge0.2 Layer
김택성,길연호,Hyeon Deok Yang,Jong-Han Yang,Woong-Ki Hong,Sukill Kang,Tae Soo Jeong,Kyu-Hwan Shim 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.6
Si1-xGex QDs structures were grown onto Si/Si0.8Ge0.2 layer using RPCVD system. Ge composition in Si1-xGex QDs was determined as about 30% and 40%. Three peaks are observed in Raman spectrum, which are located at about 520, 410, and 295 cm−1, corresponding to the vibration of Si-Si, Si-Ge, and Ge-Ge phonons, respectively, and the Si1-xGex QDs related peak was located at 490 cm−1. The PL spectrum that originates from the radiative recombinations came from the Si substrate, the Si0.8Ge0.2 layer and Si1-xGex QDs. For Si1-xGex QDs, the transition peaks related to the QDs region observed in the photocurrent spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (e-lh) fundamental excitonic transitions.
Dry Etching of Germanium by Using Inductively Coupled CF4 Plasma
김택성,H.Y. Yang,Y.H. Kil,T.S. Jeong,강석일,심규환 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.6
Inductively coupled plasma (ICP) etching of germanium was investigated in a CF4 Plasma. The Ge etch rates were determined as a function of the CF4 flow rate, the ICP power and the working pressure. The etch profile is always anisotropic. As the CF4 flow rate and the ICP power decrease, the surface smoothness increases whereas the surface smoothness decreases as the working pressure decreases. Optical emission spectroscopy (OES) was used to examine the gas phase species in the plasma and emissions from excited atomic C and F were identified. The composition and the thickness of the reaction layers on germanium due to the CF4 plasmas were obtained by using X-ray photoelectron spectroscopy (XPS). The reaction layer on germanium due to inductively-coupled CF4 plasma etching was found to be typically very thin Ge-F and C-F layer.