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A CMOS-Process-Compatible ZnO-Based Charge-Trap Flash Memory
Yujeong Seo,Min Yeong Song,Ho-Myoung An,Tae Geun Kim IEEE 2013 IEEE electron device letters Vol.34 No.2
<P>ZnO-based charge-trap Flash technology using a resistive switching mechanism is demonstrated for next-generation nonvolatile memory. This device consists of metal/ZnO/nitride/oxide/silicon in order to make use of the electrical transport in the ZnO resistive switching layer. Compared to the previous devices with perovskite oxide materials used as a conduction path, the proposed device shows faster switching speeds (10 ns/100 μs), lower operation voltages ( ±7 V) for the program/erase ( P/E) states, and higher endurance (10<SUP>6</SUP> P/E cycles), along with comparable retention properties.</P>
( Yujeong Jeong ),( Seongbin Hong ),( Gyuweon Jung ),( Dongkyu Jang ),( Wonjun Shin ),( Jinwoo Park ),( Seung-ik Han ),( Hyungtak Seo ),( Jong-ho Lee ) 한국센서학회 2020 센서학회지 Vol.29 No.1
This study investigates the nitrogen dioxide (NO<sub>2</sub>) sensing characteristics of an Si MOSFET gas sensor with a tungsten trioxide (WO<sub>3</sub>) sensing layer deposited using the sputtering method. The Si MOSFET gas sensor consists of a horizontal floating gate (FG) interdigitated with a control gate (CG). The WO<sub>3</sub> sensing layer is deposited on the interdigitated CG-FG of a field effect transistor(FET)- type gas sensor platform. The sensing layer is deposited with different thicknesses of the film ranging from 100 nm to 1 μm by changing the deposition times during the sputtering process. The sensing characteristics of the fabricated gas sensor are measured at different NO<sub>2</sub> concentrations and operating temperatures. The response of the gas sensor increases as the NO<sub>2</sub> concentration and operating temperature increase. However, the gas sensor has an optimal performance at 180℃ considering both response and recovery speed. The response of the gas sensor increases significantly from 24% to 138% as the thickness of the sensing layer increases from 100 nm to 1 μm. The sputtered WO<sub>3</sub> film consists of a dense part and a porous part. As reported in previous work, the area of the porous part of the film increases as the thickness of the film increases. This increased porous part promotes the reaction of the sensing layer with the NO<sub>2</sub> gas. Consequently, the response of the gas sensor increases as the thickness of the sputtered WO<sub>3</sub> film increases.
수술실 간호사의 의사소통 자기효능감과 환자안전문화인식이 간호오류 경험에 미치는 영향
서지인(Seo, Jiin),김유정(Kim, Yujeong) 한국간호행정학회 2021 간호행정학회지 Vol.27 No.3
Purpose: This study was conducted to identify the influence of communication self-efficacy and perception of the patient safety culture on the experience of nursing errors among operating room nurses. Methods: A cross-sectional design was used, with a convenience sample of 184 operation room nurses from 16 hospitals in Korea. Data were collected through a structured self-administered survey. The questionnaires included Communication, Self Efficacy, Safety Attitude Questionnaire, and experiences of nursing errors in operation room. Data were analyzed using descriptive analysis, Shapiro-Wilk test, Mann-Whitney U test, Kruskal-Wallis test, Pearson correlation coefficients and multiple linear regression. Results: The experience of nursing errors had significant negative correlations with communication self-efficacy (r=-.39, p<.001) and perception of the patient safety culture (r=-.36, p<.001). Factors significantly influencing the experiences of nursing errors included communication self-efficacy (β=-.25, p=.002), and perception of patient safety culture (β=-.21, p=.009). The overall explanatory power was 19% (F=14.85, p<.001). Conclusion: It is necessary to develop continuous education and programs improving communication self efficacy and perception of patient safety culture to reduce risk of nursing errors in the operating room.
오유정(Yujeong Oh),곽민지(Minji Kwak),서승모(SeungMo Seo),최종원(Jongwon Choi) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
기존 딥러닝은 연속적으로 다른 데이터를 학습할 시, 이전에 배운 정보를 기억하지 못하는 파괴적 망각현상을 보인다. 이를 해결하기 위해, 다양한 연속 학습(Continual Learning) 기법들이 제안되고 있지만 대부분 이미지 분류(Image Classification) 문제에 집중하고 있다. 하지만 객체 탐지(Object Detection)를 활용하는 분야에서도 변화되는 환경에서 효율적으로 학습을 지속해 나갈 수 있도록 하는 연속 학습 기술을 요구하기 때문에 객체 탐지에서의 연속 학습 연구도 필요하다. 이에 본 논문에서는 객체 탐지에서의 메모리 기반 연속 학습 기법을 제안한다. Face mask detection 데이터셋을 이용하여 실험을 수행하였으며, 베이스라인(baseline) 대비 망각은 87.5% 완화되었고 정확도는 11.6% 향상되었다.
Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods.
Song, Min Yeong,Seo, Yujeong,Park, Soyun,Lee, Jae Hyuk,An, Ho-Myoung,Kim, Tae Geun American Scientific Publishers 2013 Journal of Nanoscience and Nanotechnology Vol.13 No.9
<P>The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).</P>
Kim, Hee-Dong,An, Ho-Myoung,Seo, Yujeong,Zhang, Yongjie,Park, Jong Sun,Kim, Tae Geun Elsevier 2010 Microelectronics and reliability Vol.50 No.1
<P><B>Abstract</B></P><P>The paper presents the passivation effect of post-annealing gases on the negative bias temperature instability of metal/silicon-oxide/silicon-nitride/silicon-oxide/silicon (MONOS) capacitors. MONOS samples annealed at 850°C for 30s by a rapid thermal annealing (RTA) are treated by additional annealing in a furnace, using annealing gases N<SUB>2</SUB> and N<SUB>2</SUB>–H<SUB>2</SUB> (2% hydrogen and 98% nitrogen gas mixture) at 450°C for 30min. MONOS samples annealed in an N<SUB>2</SUB>–H<SUB>2</SUB> environment are found to have lowest oxide trap charge density shift, Δ<I>N<SUB>ot</SUB></I>=8.56×10<SUP>11</SUP>cm<SUP>−2</SUP>, and the lowest interface-trap density increase, Δ<I>N<SUB>it</SUB></I>=4.49×10<SUP>11</SUP>cm<SUP>−2</SUP> among the three samples as-deposited, annealed in N<SUB>2</SUB> and N<SUB>2</SUB>–H<SUB>2</SUB> environments. It has also been confirmed that the same MONOS samples have the lowest interface-trap density, <I>D<SUB>it</SUB></I>=0.834×10<SUP>11</SUP>eV<SUP>−1</SUP>cm<SUP>−2</SUP>, using small pulse deep level transient spectroscopy. These results indicate that the density of interface traps between the silicon substrate and the tunneling oxide layer are significantly reduced by the additional furnace annealing in the N<SUB>2</SUB>–H<SUB>2</SUB> environment after the RTA.</P>
Kim, Dae Hwan,Park, Sungwook,Seo, Yujeong,Kim, Tae Geun,Kim, Dong Myong,Cho, Il Hwan The Institute of Electronics and Information Engin 2012 Journal of semiconductor technology and science Vol.12 No.4
The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-$Al_2O_3$-Nitride-Oxide-Semiconductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is ~0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36~0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated $h^*$ diffusion-induced Si/$SiO_2$ interface trap ($N_{IT}$) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide ($N_{OT}$). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4~0.9 in the programmed cell and n=0.65~1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperature-controlled $h^*$ diffusion followed by $N_{IT}$ passivation.