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SCHOTTKY PROPERTIES OF ION BEAM DEPOSITED W-Si-N REFRACTORY CONTACTS ON GaAs
Park, C. S.,Lee, J. S.,Yang, J. W.,Shim, K. H.,Lee, J. H.,Choe, Y. K.,Kang, J. Y.,Ma, D. S.,Lee, J. Y. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
We first tried low energy ion beam assisted deposition (IBAD) of refractory W-Si-N films onto GaAs for application to gate electrode of metal-semiconductor field effect transistors (MESFET). This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter-deposition. The Schottky diode characteristics of W-Si-N contacts on GaAs and their thermal stability were investigated after annealing at 700-900℃ for 30 min. The Schottky barrier heights of W/, WN_(0 27)/, and WSi_(0 3)N_(0 4)/GaAs diodes annealed at 850 were 0.71, 0.84, and 0.76 eV respectively, which are comparable to those of the best results obtained by the conventional sputtering.
Lim, J.H.,Shim, J.H.,Choi, J.H.,Park, J.H.,Kim, W.,Joo, J.,Kim, C.J. North-Holland 2009 Physica. C, Superconductivity Vol.469 No.15
We fabricated nano-carbon (NC) doped MgB<SUB>2</SUB> bulks using an in situ process in order to improve the critical current density (J<SUB>c</SUB>) under a high magnetic field and evaluated the correlated effects of the doped carbon content and sintering temperature on the phase formation, microstructure and critical properties. MgB<SUB>2-x</SUB>C<SUB>x</SUB> bulks with x=0 and 0.05 were fabricated by pressing the powder into pellets and sintering at 800<SUP>o</SUP>C, 900<SUP>o</SUP>C, or 1000<SUP>o</SUP>C for 30min. We observed that NC was an effective dopant for MgB<SUB>2</SUB> and that part of it was incorporated into the MgB<SUB>2</SUB> while the other part remained (undoped), which reduced the grain size. The actual C content was estimated to be 68-90% of the nominal content. The NC doped samples exhibited lower T<SUB>c</SUB> values and better J<SUB>c</SUB>(B) behavior than the undoped samples. The doped sample sintered at 900<SUP>o</SUP>C showed the highest J<SUB>c</SUB> value due to its high doping level, small amount of second phase, and fine grains. On the other hand, the J<SUB>c</SUB> was decreased at a sintering temperature of 1000<SUP>o</SUP>C as a result of the formation of MgB<SUB>4</SUB> phase.
3D 가상심장을 이용한 심방세동의 complex fractionated atrial electrogram (CFAE) 분석 및 catheter ablation
박진서(J.S.Park),권순성(S.S.Kwon),김준우(J.W.Kim),이현승(H.S.Lee),지윤철(Y.C.Ji),황민기(M.K.Hwang),박희남(H.N.Pak),심은보(E.B.Shim) 대한기계학회 2013 대한기계학회 춘추학술대회 Vol.2013 No.12
This study analyzed complex fractionated atrial electrogram (CFAE) and CFAE ablation for atrial fibrillation patient. We modeled atrial fibrillation by a 3D virtual heart. For this purpose, measurement techniques of cardiac ablation using catheter was numerically implemented by a simulation method, and FIR filtering was used to analyze electric signal pattern measured. Through these methods, CFAE values was calculated in the 3D mapping at virtual heart, and we found ablation target of atrial fibrillation patient. This study also simulated CFAE and CFAE-based ablation for 20 patients and the computed results were compared with actual clinical data.