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Cu 기판위에 성장한 MgO, MgAl₂O₄와 MgAl₂O₄/MgO 박막의 집속이온빔을 이용한 스퍼터링수율 측정과 이차전자방출계수 측정
정강원(K. W. Jung),이혜정(H. J. Lee),정원희(W. H. Jung),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.4
MgAl₂O₄ 막은 MgO 보호막 보다 단단하며 수분 흡착 오염문제에 상당히 강한 특성을 가진다. 본 연구에서 AC-PDP의 유전체보호막으로 사용되는 MgO 보호막의 특성을 개선하기 위해 MgAl₂O₄/MgO 이중층 보호막을 제작하여 특성을 조사하였다. 전자빔 증착기를 사용하여 Cu 기판에 MgO와 MgAl₂O₄을 각각 1000 Å 두께로 증착, MgAl₂O₄/MgO을 200/800 Å 두께로 적층 증착 후, 이온빔에 의한 충전현상을 제거하기 위해 Al을 1000 Å 두께로 증착하였다. 집속 이온빔(focused ion beam ; FIB)장치를 이용하여 10 ㎸에서 14 ㎸까지 이온빔 에너지에 따라 MgO는 0.364 ~ 0.449 값의 스퍼터링 수율에서 MgAl₂O₄/MgO을 적층함으로 24 ~ 30 % 낮아진 0.244 ~ 0.357 값의 스퍼터링 수율이 측정되었으며, MgAl₂O₄는 가장 낮은 0.088 ~ 0.109 값의 스퍼터링 수율이 측정되었다. g-집속이온빔(g-FIB)장치를 이용하여 Ne? 이온 에너지를 50 V에서 200 V까지 변화 시켜 MgAl₂O₄/MgO와 MgO는 0.09 ~ 0.12의 비슷한 이차전자방출 계수를 측정 하였다. AC-PDP셀의 72시간 열화실험 후 SEM 및 AFM으로 열화된 보호막의 표면을 관찰하여 기존의 단일 MgO 보호막과 MgAl₂O₄/MgO의 적층보호막의 열화특성을 살펴보았다. It is known that MgAl₂O₄ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of MgAl₂O₄ and MgAl₂O₄/MgO layers as dielectric protection layers for AC-PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and MgAl₂O₄ films both with a thickness of 1000 Å and MgAl₂O₄/MgO film with a thickness of 200/800 Å were grown on the Cu substrates using the electron beam evaporation. 1000 Å thick aluminium layers were deposited on the protective layes in order to avoid the charging effect of Ga? ion beam while the focused ion beam(FIB)is being used. We obtained sputtering yieds for the MgO, MgAl₂O₄ and MgAl₂O₄/MgO films using the FIB system. MgAl₂O₄/MgO protective layers have been found th show 24 ~ 30% lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated Ga? ion beam with energies ranged from 10 ㎸ to 14 ㎸. And MgAl₂O₄ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the γ-FIB. MgAl₂O₄/MgO and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated Ne+ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and MgAl₂O₄/MgO protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that MgAl₂O₄/MgO protective layer has superior hardness and degradation resistance properties to MgO protective layer.
RF-O₂ Plasma 처리한 MgO 박막의 스퍼터링 수율 측정
정원희(W. H .Jeoung),정강원(K. W. Jeong),임연찬(Y. C. Lim),오현주(H. J. Oh),박철우(C. W. Park),최은하(E. H. Choi),서윤호(Y. H. Seo),김윤기(Y. K. Kim),강승언(S. O. Kang) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.3
RF-O₂ plasma 처리한 MgO 박막의 스퍼터링 수율을 집속이온빔 장치를 이용하여 측정하였다. 가속 전압 10 ㎸의 Ga 이온빔을 주사했을 때 plasma 처리하지 않은 MgO 박막의 스퍼터링 수율은 0.33 atoms/ion, RF-O₂ plasma 처리한 MgO 박막의 스퍼터링 수율은 0.20 atoms/ion 으로 RF-O₂ plasma 처리한 경우 스퍼터링 수율이 낮아졌다. 또한 XPS, AFM을 통해 plasma 처리로 인한 MgO 표면의 변화를 관찰하였다. MgO 박막에 RF-O₂ plasma 처리 한 후 XPS O 1s spectra의 binding energy와 FWHM 값이 각각 2.36 eV와 0.6167 eV 작아졌고 표면거칠기의 RMS 값 또한 0.32 ㎚ 작아졌다. We measured sputtering yield of RF O₂-plasma treated MgO protective layer for AC-PDP(plasma display panel) using a Focused Ion Beam System(FIB). A 10 ㎸ acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 ㎚, respectively.
Hur, M.,Lee, J.Y.,Kang, W.S.,Lee, J.O.,Song, Y.-H.,Kim, S.J.,Kim, I.D. Elsevier 2016 THIN SOLID FILMS - Vol.619 No.-
<P><B>Abstract</B></P> <P>The effect of working gas on the properties of Al<SUB>2</SUB>O<SUB>3</SUB> films and SiO<SUB>x</SUB> interlayers was investigated in direct-type plasma-enhanced atomic layer deposition. The density of the Al<SUB>2</SUB>O<SUB>3</SUB> film was higher for Ar/O<SUB>2</SUB> plasma than for He/O<SUB>2</SUB> plasma, whereas the thicknesses of the Al<SUB>2</SUB>O<SUB>3</SUB> film and SiO<SUB>x</SUB> interlayer were greater for He/O<SUB>2</SUB> plasma than for Ar/O<SUB>2</SUB> plasma. For understanding these phenomena, the amounts of C– and H-containing impurities in the deposited Al<SUB>2</SUB>O<SUB>3</SUB> film were evaluated by using X-ray photoelectron spectroscopy (XPS). Further, differences between the plasma properties in He/O<SUB>2</SUB> and Ar/O<SUB>2</SUB> were analyzed using optical emission spectroscopy (OES); the consumption rate of O radicals and the production rate of H radicals were estimated from the time-resolved emission intensities for the O I and H<SUB>α</SUB> lines, respectively. The mechanisms underlying the working gas effect on the density of the Al<SUB>2</SUB>O<SUB>3</SUB> film, as well as the thicknesses of the Al<SUB>2</SUB>O<SUB>3</SUB> film and SiO<SUB>x</SUB> interlayer have also been discussed.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The effect of working gas is investigated in direct-type plasma ALD. </LI> <LI> Ar/O<SUB>2</SUB> plasma yields a higher density and a smaller thickness of Al<SUB>2</SUB>O<SUB>3</SUB> films. </LI> <LI> SiO<SUB>x</SUB> interlayer thickness is larger for He/O<SUB>2</SUB> plasma. </LI> <LI> Mechanisms for these phenomena are discussed by analyzing the XPS and OES results. </LI> </UL> </P>
Jang, W.J.,Jeong, D.W.,Shim, J.O.,Kim, H.M.,Roh, H.S.,Son, I.H.,Lee, S.J. Applied Science Publishers 2016 APPLIED ENERGY Vol.173 No.-
<P>Thermodynamic equilibrium analysis of the combined steam and carbon dioxide reforming of methane (CSCRM) and side reactions was performed using total Gibbs free energy minimization. The effects of (CO2 + H2O)/CH4 ratio (0.9-2.9), CO2:H2O ratio (3:1-1:3), and temperature (500-1000 degrees C) on the equilibrium conversions, yields, coke yield, and H-2/CO ratio were investigated. A (CO2 + H2O)/CH4 ratio greater than 1.2, a CO2:H2O ratio of 1:2.1, and a temperature of at least 850 degrees C are preferable reaction conditions for the synthesis gas preparation in the gas to liquid process. Simulated conditions were applied to the CSCRM reaction and the experimental data were compared with the thermodynamic equilibrium results. The thermodynamic equilibrium results were mostly consistent with the experimental data, but the reverse water gas shift reaction rapidly occurred in the real chemical reaction and under excess oxidizing agent conditions. In addition, a long-term stability test (under simulated conditions) showed that the equilibrium conversion was maintained for 500 h and that the coke formation on the used catalyst was not observed. (C) 2016 Elsevier Ltd. All rights reserved.</P>
Current Transport Characteristics of 22.9 ㎸ High Temperature Superconducting Cable System
손송호(S. H. Sohn),임지현(J. H. Lim),류희석(H. S. Ryoo),양형석(H. S. Yang),최하옥(H. O. Choi),마용호(Y. H. Ma),김동락(D. L. Kim),류경우(K. W. Ryu),성태현(T. H. Sung),현옥배(O. B. Hyun),임성우(S. W. Lim),황시돌(S. D. Hwang) 대한전기학회 2008 대한전기학회 학술대회 논문집 Vol.2008 No.7(초록집)
CHF₃ / C₂F6 플라즈마에 의한 실리콘 표면 잔류막의 특성
권광호(K.-H. Kwon),박형호(H.-H. Park),이수민(S. M. Lee),강성준(S. J. Kang),권오준(O.-J. Kwon),김보우(B.W. Kim),성영권(Y.-K. Sung) 한국진공학회(ASCT) 1992 Applied Science and Convergence Technology Vol.1 No.1
실리콘을 CHF₃/C₂F_6 가스 플라즈마를 이용하여 식각하면 실리콘위에 탄소, 불소 및 산소로 이루어진 잔류막이 형성된다. 이 잔류막을 XPS로 분석한 결과 탄소는 C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, C-F₃ 결합을 하고 있으며, 불소는 F-Si, F-C 및 F-O 결합으로 이루어져 있음을 알았다. 한편 산소는 O-Si 및 O-F 결합으로, 실리콘은 Si-Si, Si-C 및 Si-O 결합상태를 나타낸다. 잔류막의 수직분포 연구를 통하여 Si-O 및 Si-C 결합이 탄소와 불소의 결합층 아래에 존재하고, 잔류막의 표면부에 F-O 결합이 분포함을 알았다. 또한 건식식각 변수가 잔류막 형성에 미치는 영향이 조사되었으며 CHF₃/C₂F_6 가스 유량비, RF power 벚 압력 등이 잔류막의 두께, 조성비 및 잔류막의 결합상태에 영향을 미침을 알 수 있었다. Si surfaces exposed to CHF₃/C₂F_6 gas plasmas in reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF₃/C₂F_6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-Si, C-C/H, C-CF_x(x≤3), C-F, C-F₂, and C-F₃. The chemical bonding states of fluorine are described with F-Si, F-C, and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF₃/C₂F_6 gas ratio, RF power, and pressure are investigated.
Jang, W.J.,Jeong, D.W.,Shim, J.O.,Roh, H.S.,Son, I.H.,Lee, S.J. Pergamon Press ; Elsevier Science Ltd 2013 International journal of hydrogen energy Vol.38 No.11
<P>Ni-Ce0.8Zr0.2O2 and Ni-MgO-Ce0.8Zr0.2O2 catalysts were investigated for H-2 production from CO2 reforming of CH4 reaction at a very high gas hourly space velocity of 480,000 h(-1) Ni-MgO-Ce0.8Zr0.2O2 exhibited higher catalytic activity and stability (CH4 conversion >95% at 800 degrees C for 200 h). The outstanding catalytic performance is mainly due to the basic nature of MgO and an intimate interaction between Ni and MgO. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.</P>
압전 트랜스포머를 이용한 PDA용 CCFL구동회로의 모델링과 동작특성
황락훈(L.H.Hwang),장은성(E.S.Jang),남우영(W.Y.Nam),류주현(J.H Yoo),오동언(D.O.Oh),조문택(M.T.Cho),안익수(I.S.Ahn),주해종(H.J.Joo) 전력전자학회 2003 전력전자학술대회 논문집 Vol.2003 No.7(1)
In This paper, to apply piezoelectric transformer for PDA backlight inverter, piezoelectric transformer using the composition which Nb₂O_5 added into PNW-PMN-PZT ceramics was fabricated as Rosen-type one with the size of 1165mm³. And their electrical characteristics were investigated with the variations of load resistance and driving frequency And then, the driving circuit for PDA CCFL(O.6W) which composed of the two MOSFETs connecting in series was manufactured using piezoelectric transformer, VCO and one-chip microprocessor. After driving for 25 min using the proposed circuit for PDA CCFL(O.6W), driving frequency of 214.4kHz, input voltage of 31.78 V and input current of 21.1mA were shown. And then, output voltage of 293.2 V and output current of 22mA were shown At the same time, efficiency of 96.2% and temperature rise of 3.6℃ were appeared at the piezoelectric transformer