On the Minimization of Crosstalk Conflicts in a Destination Based Modified Omega Network

Bhardwaj, Ved Prakash,Nitin, Nitin Korea Information Processing Society 2013 Journal of information processing systems Vol.9 No.2

In a parallel processing system, Multi-stage Interconnection Networks (MINs) play a vital role in making the network reliable and cost effective. The MIN is an important piece of architecture for a multiprocessor system, and it has a good impact in the field of communication. Optical Multi-stage Interconnection Networks (OMINs) are the advanced version of MINs. The main problem with OMINs is crosstalk. This paper, presents the (1) Destination Based Modified Omega Network (DBMON) and the (2) Destination Based Scheduling Algorithm (DBSA). DBSA does the scheduling for a source and their corresponding destination address for messages transmission and these scheduled addresses are passed through DBMON. Furthermore, the performance of DBMON is compared with the Crosstalk-Free Modified Omega Network (CFMON). CFMON also minimizes the crosstalk in a minimum number of passes. Results show that DBMON is better than CFMON in terms of the average number of passes and execution time. DBSA can transmit all the messages in only two passes from any source to any destination, through DBMON and without crosstalk. This network is the modified form of the original omega network. Crosstalk minimization is the main objective of the proposed algorithm and proposed network.

On the Minimization of Crosstalk Conflicts in a Destination Based Modified Omega Network

Nitin,Ved Prakash Bhardwaj 한국정보처리학회 2013 Journal of information processing systems Vol.9 No.2

Some remarks on results of Pant and Pant along with generalization for hybrid mappings

Kamal Wadhwa,Ved Prakash Bhardwaj 원광대학교 기초자연과학연구소 2017 ANNALS OF FUZZY MATHEMATICS AND INFORMATICS Vol.14 No.3

In the present note, we pose some remarks on results of Pant and Pant [23]. After resolving some errors; we provide their results using common limit in the range property. Further, we generalize their results for hybrid pairs of mappings in fuzzy metric space. we also provide some examples for the validity of our results.

Pediatric Hemichorea-Hemiballismus Associated with Nonketotic Hyperglycemia: A Case Report and Review of the Literature

Niraj Kumari,Ved Prakash 대한파킨슨병및이상운동질환학회 2021 Journal Of Movement Disorders Vol.14 No.3

HNKH is an uncommon choreo-ballistic movement disorder that is commonly reported in elderly females. It may rarely occur in the pediatric age group, even as an initial manifestation of DM. Early recognition and prompt management of serum glucose, with symptomatic therapy for involuntary movements, often result in complete clinical improvement in the majority of cases.

Standardization of process variables for development of traditional Indian dairy product herbal apple rabri with improved organoleptic, textural, antioxidants, functional attributes and shelf life

Lata Rajnee,Jaiswal Ved Prakash,Paul Veena,Tripathi Abhishek Dutt,Agarwal Aparna,Rai Dinesh Chandra 한국식품연구원 2023 Journal of Ethnic Foods Vol.10 No.49

Rabri is a concentrated whole milk product from India that has been heat desiccated and sweetened. Herbs are reported to possess therapeutic properties. The addition of these herbs in the food enhances the functionality of the food. Herbal apple rabri was prepared by adding two herbs (brahmi and shatavari). The herbal apple rabri was optimized based on its organoleptic attributes. The sensory evaluation revealed that adding brahmi up to 2.5% and shatavari up to 1.5% is acceptable. The optimized rabri was further analyzed for its texture profile. The shelf life was evaluated based on the physicochemical, antioxidant, phenolics, and microbial content like total plate count and yeast and molds count. The DPPH inhibition activity shows that the optimized rabri has antioxidant potential (58.41 ± 0.03%) compared to control rabri (34.30 ± 0.04%) due to adding herbs. The microbial spoilage in the optimized sample was less as compared to the control sample.

Influence of Grain Size and Room-Temperature Sputtering Condition on Optical and Electrical Properties of Undoped and Ga-Doped ZnO Thin Films

김도현,전민현,전훈하,임재영,문주호,이성휘,Ved Prakash Verma,최원봉 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III

The optical and the electrical properties of undoped zinc-oxide (ZnO) thin lms of various thicknesseswerecomparedwiththoseofGa-doped(GZO)thinlms. Transparent,high-qualityundoped ZnO and GZO lms were deposited successfully using radio-frequency (RF) sputtering at room temperature. The lms were polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. The lms had an average optical transmission >85 % in the visible partoftheelectromagneticspectrum. TheundopedZnOthinlmsweremoretransparentthanthe GZO thin lms. The ZnO thin-lm transistors (TFTs) were operated in the enhancement mode withathresholdvoltageof2.5V.Incontrary,theGa-dopedZnOTFTswereoperatedinadepletion mode with a threshold voltage of {3.4 V. We successfully demonstrated undoped and the Ga-doped ZnO TFTs by using conventional SiO2 gate insulators at room temperature. We postulate that undoped ZnO lms, which have not been treated to improve the optical properties, can be used, instead of doped ZnO lms, in transparent devices for next generation optoelectronic devices. The optical and the electrical properties of undoped zinc-oxide (ZnO) thin films of various thicknesses were compared with those of Ga-doped (GZO) thin films. Transparent, high-quality undoped ZnO and GZO films were deposited successfully using radio-frequency (RF) sputtering at room temperature. The films were polycrystalline with a hexagonal structure and a strongly preferred orientation along the $c$-axis. The films had an average optical transmission $>$85 \% in the visible part of the electromagnetic spectrum. The undoped ZnO thin films were more transparent than the GZO thin films. The ZnO thin-film transistors (TFTs) were operated in the enhancement mode with a threshold voltage of 2.5 V. In contrary, the Ga-doped ZnO TFTs were operated in a depletion mode with a threshold voltage of --3.4 V. We successfully demonstrated undoped and the Ga-doped ZnO TFTs by using conventional SiO$_2$ gate insulators at room temperature. We postulate that undoped ZnO films, which have not been treated to improve the optical properties, can be used, instead of doped ZnO films, in transparent devices for next generation optoelectronic devices.

Estimation of Genetic Parameters for First Lactation Monthly Test-day Milk Yields using Random Regression Test Day Model in Karan Fries Cattle

Singh, Ajay,Singh, Avtar,Singh, Manvendra,Prakash, Ved,Ambhore, G.S.,Sahoo, S.K.,Dash, Soumya Asian Australasian Association of Animal Productio 2016 Animal Bioscience Vol.29 No.6

A single trait linear mixed random regression test-day model was applied for the first time for analyzing the first lactation monthly test-day milk yield records in Karan Fries cattle. The test-day milk yield data was modeled using a random regression model (RRM) considering different order of Legendre polynomial for the additive genetic effect (4th order) and the permanent environmental effect (5th order). Data pertaining to 1,583 lactation records spread over a period of 30 years were recorded and analyzed in the study. The variance component, heritability and genetic correlations among test-day milk yields were estimated using RRM. RRM heritability estimates of test-day milk yield varied from 0.11 to 0.22 in different test-day records. The estimates of genetic correlations between different test-day milk yields ranged 0.01 (test-day 1 [TD-1] and TD-11) to 0.99 (TD-4 and TD-5). The magnitudes of genetic correlations between test-day milk yields decreased as the interval between test-days increased and adjacent test-day had higher correlations. Additive genetic and permanent environment variances were higher for test-day milk yields at both ends of lactation. The residual variance was observed to be lower than the permanent environment variance for all the test-day milk yields.

Zinc Oxide와 갈륨이 도핑 된 Zinc Oxide를 이용하여 Radio Frequency Magnetron Sputtering 방법에 의해 상온에서 제작된 박막 트랜지스터의 특성 평가

전훈하,노경석,김도현,최원봉,전민현,Jeon, Hoon-Ha,Verma, Ved Prakash,Noh, Kyoung-Seok,Kim, Do-Hyun,Choi, Won-Bong,Jeon, Min-Hyon 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.5

본 논문에서는 zinc oxide (ZnO)와 gallium이 도핑 된 zinc oxide (GZO)를 이용하여 radio frequency (RF) magnetron sputtering 방법에 의해 상온에서 제작된 bottom-gate 박막 트랜지스터의 특성을 평가하고 분석하였다. 게이트 절연층 물질로서 새로운 물질을 사용하지 않고 열적 성장된 $SiO_2$를 사용하여 게이트 누설 전류를 수 pA 수준까지 줄일 수 있었다. ZnO와 GZO 박막의 표면 제곱평균제곱근은 각각 1.07 nm, 1.65 nm로 측정되었다. 그리고 ZnO 박막은 80% 이상, GZO 박막은 75% 이상의 투과도를 가지고 있었고, 박막의 두께에 따라 투과도가 달라졌다. 또한 두 시료 모두 (002) 방위로 잘 정렬된 wurtzite 구조를 가지고 있었다. 제작된 ZnO 박막 트랜지스터는 2.5 V의 문턱 전압, $0.027\;cm^2/(V{\cdot}s)$의 전계효과 이동도, 104의 on/off ratio, 1.7 V/decade의 gate voltage swing 값들을 가지고 있었고, enhancement 모드 특성을 가지고 있었다. 반면에 GZO 박막 트랜지스터의 경우에는 -3.4 V의 문턱 전압, $0.023\;cm^2/(V{\cdot}s)$의 전계효과 이동도, $2{\times}10^4$의 on/off ratio, 3.3 V/decade의 gate voltage swing 값들을 가지고 있었고, depletion 모드 특성을 가지고 있었다. 우리는 기존의 ZnO와 1wt%의 Ga이 도핑된 ZnO를 이용하여 두 가지 모드의 트랜지스터 특성을 보이는 박막 트랜지스터를 성공적으로 제작하고 분석하였다. In this paper we present a bottom-gate type of zinc oxide (ZnO) and Gallium (Ga) doped zinc oxide (GZO) based thin film transistors (TFTs) through applying a radio frequency (RF) magnetron sputtering method at room temperature. The gate leakage current can be reduced up to several ph by applying $SiO_2$ thermally grown instead of using new gate oxide materials. The root mean square (RMS) values of the ZnO and GZO film surface were measured as 1.07 nm and 1.65 nm, respectively. Also, the transmittances of the ZnO and GZO film were more than 80% and 75%, respectively, and they were changed as their film thickness. The ZnO and GZO film had a wurtzite structure that was arranged well as a (002) orientation. The ZnO TFT had a threshold voltage of 2.5 V, a field effect mobility of $0.027\;cm^2/(V{\cdot}s)$, a on/off ratio of $10^4$, a gate voltage swing of 17 V/decade and it operated in a enhancement mode. In case of the GZO TFT, it operated in a depletion mode with a threshold voltage of -3.4 V, a field effect mobility of $0.023\;cm^2/(V{\cdot}s)$, a on/off ratio of $2{\times}10^4$ and a gate voltage swing of 3.3 V/decade. We successfully demonstrated that the TFTs with the enhancement and depletion mode type can be fabricated by using pure ZnO and 1wt% Ga-doped ZnO.

Low-Voltage Zinc-Oxide Thin-Film Transistors on a Conventional SiO2 Gate Insulator Grown by Radio-Frequency Magnetron Sputtering at Room Temperature

Hoonha Jeon,전민현,Do-Hyun Kim,Dongjo Kim,문주호,Kyoungseok Noh,Ved Prakash Verma,Wonbong Choi 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.III

In this paper we present bottom-gate-type ZnO-based TFTs with low threshold voltages fabricated with a conventional SiO$_2$ gate insulator by radio-frequency (RF) magnetron sputtering at room temperature. The SiO$_2$ is used as a gate insulator, and it is possible to achieve a low gate leakage current ($<$10 pA) by using this conventional SiO$_2$ oxide without new gate oxide materials. The ZnO film also has good uniformity and transparency. The ZnO TFTs operate in the enhancement mode with a threshold voltage of 2.5 V. A mobility of 0.018 cm$^2$/(V$\cdot$s), an on/off ratio of about 10$^4$, and a gate voltage swing of 1.7 V/decade are obtained. We successfully demonstrate that a ZnO TFT with comparable electrical characteristics can be fabricated by utilizing the conventional SiO$_2$ gate insulator. It is also possible to reduce the power consumption due to their low threshold voltage and low leakage current.

Prognostic Factors in Patients Hospitalized with Diabetic Ketoacidosis

Avinash Agarwal,Ambuj Yadav,Manish Gutch,Shuchi Consul,Sukriti Kumar,Ved Prakash,Anil Kumar Gupta,Annesh Bhattacharjee 대한내분비학회 2016 Endocrinology and metabolism Vol.31 No.3

Background: Diabetic ketoacidosis (DKA) is characterized by a biochemical triad of hyperglycemia, acidosis, and ketonemia. This condition is life-threatening despite improvements in diabetic care. The purpose of this study was to evaluate the clinical andbiochemical prognostic markers of DKA. We assessed correlations in prognostic markers with DKA-associated morbidity andmortality. Methods: Two hundred and seventy patients that were hospitalized with DKA over a period of 2 years were evaluated clinically andby laboratory tests. Serial assays of serum electrolytes, glucose, and blood pH were performed, and clinical outcome was noted aseither discharged to home or death. Results: The analysis indicated that significant predictors included sex, history of type 1 diabetes mellitus or type 2 diabetes mellitus,systolic blood pressure, diastolic blood pressure, total leukocyte count, Acute Physiology and Chronic Health Evaluation II(APACHE II) score, blood urea nitrogen, serum creatinine, serum magnesium, serum phosphate, serum osmolality, serum glutamicoxaloacetic transaminases, serum glutamic pyruvic transaminases, serum albumin, which were further regressed and subjected tomultivariate logistic regression (MLR) analysis. The MLR analysis indicated that males were 7.93 times more likely to have favorableoutcome compared with female patients (odds ratio, 7.93; 95% confidence interval, 3.99 to 13.51), while decreases in meanAPACHE II score (14.83) and serum phosphate (4.38) at presentation may lead to 2.86- and 2.71-fold better outcomes, respectively,compared with higher levels (APACHE II score, 25.00; serum phosphate, 6.04). Conclusion: Sex, baseline biochemical parameters such as APACHE II score, and phosphate level were important predictors of theDKA-associated mortality.