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Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors
문주호,김동주,정선호,Jooho Moon,Chiyoung Park,Minhyon Jeon,Won-Chol Sin,Jinha Jung,Hyun-Jung Woo,Seung-Hyun Kim,Jowoong Ha 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1
We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance. We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.
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문주호,정선호,Seong Hui Lee,김동조 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4
A ultraviolet (UV)-croslinkable organosiloxane-based organic-inorganic hybrid gate dielectric for use in organic thin-film transistors was fabricated. The hybrid dielectric was synthesized via a sol-gel reaction using a mixture of a Si-based alkoxide, which contained a UV-croslinkable organic functional group for photopaternability and a Zr-based alkoxide, which provided for a high dielectric constant (∽5.5). To obtain a precisely paterned dielectric layer with a linewidth of 3 μm, the pre- bake temperature and the UV iradiation time were optimized by investigating the evolution of the chemical structure and analyzing the photopolymerization kinetics of the UV-croslinkable organic group. In addition, chemical groups that caused current leakage were eliminated by controling the post-bake temperature, resulting in a gate dielectric with a dielectric strength of 1.2 MV/cm.
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문주호,최윤경,김성훈,김용일,김성식 대한치과교정학회 2024 대한치과교정학회 임상저널 Vol.14 No.4
Evaluating the patient’s growth is an essential part of dentistry. Although we are primarily interested in whether the patient has reached the pubertal growth spurt, assessment of the patient’s maturational status and developmental stage can affect diagnosis, treatment goals, treatment plan, prognosis, and treatment outcome. In orthodontics, it is necessary to accurately assess the level of skeletal maturity because the timing of treatment intervention is as important as selecting specific treatment methods. By determining the current level of skeletal maturity for each patient and initiating treatment at the optimal stage of maturity, orthodontists can achieve the most favorable response while minimizing potential morbidity. Therefore, orthodontists must be able to obtain predictable treatment results by establishing an appropriate treatment plan based on a comprehensive evaluation of the patient’s growth and development. Based on a basic understanding of various skeletal maturation indicators and sutures, as well as a large amount of data that has been studied from the past to the present, we will review their correlation and clinical considerations and ensure that the contents can be applied to actual clinical practice.
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