Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

문주호,김동주,정선호,Jooho Moon,Chiyoung Park,Minhyon Jeon,Won-Chol Sin,Jinha Jung,Hyun-Jung Woo,Seung-Hyun Kim,Jowoong Ha 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance. We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance.

비광학적 미세구조 제작기술

문주호 한국세라믹학회 2002 세라미스트 Vol.5 No.1

인쇄전자소자 및 디스플레이용 잉크소재 기술개발 동향

문주호,Mun, Ju-Ho 한국정보디스플레이학회 2007 인포메이션 디스플레이 Vol.8 No.1

Optimization of the Patterning Processing and Electrical Characteristics of a Photopatternable Organosiloxane-Based Gate Dielectric for Organic Thin-Film Transistors

문주호,정선호,Seong Hui Lee,김동조 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4

A ultraviolet (UV)-croslinkable organosiloxane-based organic-inorganic hybrid gate dielectric for use in organic thin-film transistors was fabricated. The hybrid dielectric was synthesized via a sol-gel reaction using a mixture of a Si-based alkoxide, which contained a UV-croslinkable organic functional group for photopaternability and a Zr-based alkoxide, which provided for a high dielectric constant (∽5.5). To obtain a precisely paterned dielectric layer with a linewidth of 3 μm, the pre- bake temperature and the UV iradiation time were optimized by investigating the evolution of the chemical structure and analyzing the photopolymerization kinetics of the UV-croslinkable organic group. In addition, chemical groups that caused current leakage were eliminated by controling the post-bake temperature, resulting in a gate dielectric with a dielectric strength of 1.2 MV/cm.

자가조립화 분자를 이용한 나노기공성 세라믹의 합성 및 응용

문주호 한국세라믹학회 2001 세라미스트 Vol.4 No.6

'스콜라' 이용 시 소속기관이 구독 중이 아닌 경우, 오후 4시부터 익일 오전 7시까지 원문보기가 가능합니다.

米價 政策의 展望과 方向

文周鎬 朝鮮大學校 法政大學 經商學會 學生會 1970 經商論集 Vol.4 No.1

용적률 게임, 젊은 건축가의 생존

문주호(Moon, Ju-Ho) 대한건축학회 2016 建築 Vol.60 No.12

RAW 264.7 대식세포 내에서 남정목 열매 추출물의 항염증 효과

문주호 ( Ju-ho Moon ),고흥 ( Heung Go ),신선미 ( Seon-mi Shin ),김기태 ( Ki-tae Kim ) 대한한의진단학회 2013 大韓韓醫診斷學會誌 Vol.17 No.3

Objectives This study was designed to investigate the anti-inflammatory effect of extracts from Ligustrum obtusifolium S. fruits(LOF) in RAW 264.7 Macrophages stimulated with lipopolysaccharide(LPS). Methods We examined productions of nitric oxide(NO), reactive oxygen species(ROS), inducible isoforms of NO synthase(iNOS), cyclooxygenase-2(COX-2) to investigate the anti-inflammatory effect of LOF extracts. In addition, we measured generation of pro-inflammatory cytokines(TNF-α, IL-6). Results Cell viability showed that LOF extracts had no cytotoxicity in Raw 264.7 cells. The treatment with LOF extracts significantly decreased the generation of NO and pro-inflammatory cytokines(TNF-α, IL-6) in LPS-stimulated macrophage cells. Furthermore LOF extracts inhibited intracellular ROS generation dose dependently and reduced the expression of iNOS, COX-2 proteins. Conclusions These results showed that the LOF extracts had an anti-inflammatory effect on LPS-stimulated Raw 264.7 cells. These findings provide scientific support for the use of this Ligustrum obtusifolium S. for inflammatory-related diseases.

공급과 경험

문주호(Moon, Joo-ho) 대한건축학회 2019 建築 Vol.63 No.8

Lanthanum Stannate Pyrochlore 촉매를 이용한 전기화학 촉매 셀의 제조 및 NO_x 분해 특성 분석

박사로한,문주호,Park, Saro-Han,Moon, Joo-Ho 한국세라믹학회 2002 한국세라믹학회지 Vol.39 No.10

Lanthanum Stannate Pyrochlore($La_2Sn_2O_7$) 촉매를 이용하여 $NO_x$ 제거를 위한 전기화학 촉매 셀을 제조하였다. 촉매전극은 수열합성법을 통해 합성한 $La_2Sn_2O_7$ 분말과 안정화 지르코니아(YSZ) 분말을 혼합하여 촉매층 페이스트를 제조한 후 이를 YSZ 디스크 고체전해질 위에 스크린프린팅하여 후막을 도포하였다. 위와 같이 제조한 전기화학 셀의 $NO_x$ 분해 실험은 galvanostat을 이용하여 셀에 일정한 전류를 인가하고 700${\circ}C$에서 NO 0.1%와 산소 2%의 반응가스에 대한 분해 정도를 gas chromatography와 NOx analyzer를 이용하여 측정을 하였다. 촉매 전극의 두께와 소성 온도에 따른 촉매전극의 미세구조가 $NO_x$ 분해에 미치는 영향과 전류량(0.05∼0.6A)에 따른 $NO_x$ 분해율을 측정하였다. Electrochemical cells for decomposing $NO_x$ were fabricated using a hydrothermally synthesized lanthanum stannate pyrochlore catalyst. Thick film of the catalyst on the YSZ electrolyte disk was produced by screen-printing a paste consisted of $La_2Sn_2O_7$ and YSZ powders. Direct current was applied to the electrochemical cell to promote an electrochemical catalytic decomposition of $NO_x$. $NO_x$ decomposition behavior of the rectant gas mixture ($NO_x$ 0.1%, $O_2$ 2%) was investigated at 700${\circ}C$ under atmosphere pressure using on-line gas chromatography and $NO_x$ analyzer. It was observed that microstructure of the catalyst layer significantly influences the electrocatalystic decomposition of $NO_x$.