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Thomas R. McCarty,Ahmad Najdat Bazarbashi,Basile Njei,Marvin Ryou,Harry R. Aslanian,Thiruvengadam Muniraj 대한소화기내시경학회 2020 Clinical Endoscopy Vol.53 No.5
Background/Aims: Percutaneous liver biopsy (PCLB) or transjugular liver biopsy (TJLB) have traditionally been performed toobtain a sample of hepatic tissue; however, endoscopic ultrasound-guided liver biopsy (EUSLB) has become an attractive alternative. The aim of this study was to compare the efficacy and safety of EUSLB, PCLB, and TJLB. Methods: Search strategies were developed in accordance with PRISMA and MOOSE guidelines. Major outcomes included thefollowing: adequacy of biopsy specimens (i.e., complete portal triads [CPT], total specimen length [TSL] in mm, and length oflongest piece [LLP]) in mm), and rate of adverse events. Only studies comparing all biopsy approaches (i.e., EUSLB, PCLB, andTJLB) were included. Results: Five studies (EUSLB [n=301]; PCLB [n=176]; and TJLB [n=179]) were included. Biopsy cumulative adequacy rates forEUSLB, PCLB, and TJLB were 93.51%, 98.27%, and 97.61%, respectively. Based on the subgroup analysis limited to EUS biopsyneedles in current clinical practice, there was no difference in biopsy adequacy or adverse events for EUSLB compared to PCLB andTJLB (all p>0.050). A comparison of EUSLB and PCLB revealed no difference between specimens regarding both CPT (p=0.079) andLLP (p=0.085); however, a longer TSL (p<0.001) was observed. Compared to TJLB, EUSLB showed no difference in LLP (p=0.351),fewer CPT (p=0.042), and longer TSL (p=0.005). Conclusions: EUSLB appears to be a safe, minimally invasive procedure that is comparable to PCLB and TJLB regarding biopsyspecimens obtained and rate of adverse events associated with each method.
Harris, Thomas R.,Ryu, Mee-Yi,Yeo, Yung Kee,Beeler, Richard T.,Kouvetakis, John Elsevier 2014 CURRENT APPLIED PHYSICS Vol.14 No.1
The electrical properties of p-type Ge, Ge1-ySny, and Si0.09Ge0.882Sn0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge1-ySny/Si, and Si0.09Ge0.882Sn0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370-435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed. (C) 2013 Elsevier B.V. All rights reserved.
류미이,Thomas R. Harris,Buguo Wang,Yung Kee Yeo,Michael R. Hogsed,이상조,김종수,John Kouvetakis 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.8
The temperature (T)-dependent photoluminescence (PL) from Ge1−ySny (y = 4.3%–9.0%) alloys grown on Ge-buffered Si substrates was studied as a function of the Sn content. The PL from Ge1−ySny alloys with high Sn contents (≥7.0%) exhibited the typical characteristics of direct bandgap semiconductors, such as an increase in the PL intensity with decreasing T and a single PL peak corresponding to a transition from the direct bandgap (Γ-valley) to the valence band at all temperatures from 10 to 300 K. For the Ge1−ySny alloys with low Sn contents (≤6.2%), the PL emission peaks corresponding to both the direct bandgap (ED) and the indirect bandgap (EID) PL appeared at most temperatures and as T was increased, the integrated PL intensities of ED initially increased, then decreased, and finally increased again. The unstrained ED and EID energies estimated from the PL spectra at 75 and 125 K were plotted as functions of the Sn concentration, and the cross-over point for unstrained Ge1−ySny was found to be about 6.4%–6.7% Sn by using linear fits to the data in the range of Sn contents from 0% to 9.0%. Based on the results at 75 and 125 K, the cross-over Sn concentration of unstrained Ge1−ySny should be about 6.4%–6.7% Sn content at room temperature. The ED energies of the Ge0.925Sn0.075 alloys were estimated from the T-dependent photoreflectance spectra, and the ED values was consistent with those obtained from PL spectra.
Evidence for several waves of global transmission in the seventh cholera pandemic
Mutreja, Ankur,Kim, Dong Wook,Thomson, Nicholas R.,Connor, Thomas R.,Lee, Je Hee,Kariuki, Samuel,Croucher, Nicholas J.,Choi, Seon Young,Harris, Simon R.,Lebens, Michael,Niyogi, Swapan Kumar,Kim, Eun J Nature Publishing Group, a division of Macmillan P 2011 Nature Vol.477 No.7365
Vibrio cholerae is a globally important pathogen that is endemic in many areas of the world and causes 3??5??million reported cases of cholera every year. Historically, there have been seven acknowledged cholera pandemics; recent outbreaks in Zimbabwe and Haiti are included in the seventh and ongoing pandemic. Only isolates in serogroup O1 (consisting of two biotypes known as ??classical?? and ??El Tor??) and the derivative O139 (refs 2, 3) can cause epidemic cholera. It is believed that the first six cholera pandemics were caused by the classical biotype, but El Tor has subsequently spread globally and replaced the classical biotype in the current pandemic. Detailed molecular epidemiological mapping of cholera has been compromised by a reliance on sub-genomic regions such as mobile elements to infer relationships, making El Tor isolates associated with the seventh pandemic seem superficially diverse. To understand the underlying phylogeny of the lineage responsible for the current pandemic, we identified high-resolution markers (single nucleotide polymorphisms; SNPs) in 154 whole-genome sequences of globally and temporally representative V.??cholerae isolates. Using this phylogeny, we show here that the seventh pandemic has spread from the Bay of Bengal in at least three independent but overlapping waves with a common ancestor in the 1950s, and identify several transcontinental transmission events. Additionally, we show how the acquisition of the SXT family of antibiotic resistance elements has shaped pandemic spread, and show that this family was first acquired at least ten years before its discovery in V.??cholerae.
조현준,Geun-Hyeong Kim,김종수,류미이,Yung Kee Yeo,Thomas R. Harris,John Kouvetakis 한국물리학회 2016 Current Applied Physics Vol.16 No.1
Temperature- (T-) dependent photoreflectance (PR) measurements have been made for the tensilestrained, undoped Ge0.985Sn0.015 film grown on n-Si substrate by ultra-high vacuum chemical vapor deposition method. The PR spectra at room temperature consist of two signals at around 0.739 and 1.022 eV, which are assigned to the direct transitions from conduction G valley to valence and spin-orbit split-off bands, respectively. The T-dependent PR measurements show tensile-strain split direct bandgap transitions from the G valley to the light-hole (ELH) and heavy-hole (EHH) bands at energies of 0.772 and 0.803 eV at 12 K, respectively, which are not usually observable from the photoluminescence measurements for relatively high Sn content Ge1-ySny samples. The PR signals for both HH and LH bands are blue shifted and their intensities decrease with increasing temperature, but both LH and HH PR signals persist through 240 K and only one HH PR signal is observed at room temperature. It has been observed that the separation energy between the EHH and ELH increases as T decreases, which clearly indicates an increase in tensile strain as T decreases. From the analysis of the T-dependent separation energy between the ELH and EHH, the T-dependent tensile strain in the Ge0.985Sn0.015 film was obtained, which might not be easily measured using the X-ray diffraction method.
International Network of Twin Registries (INTR): Building a Platform for International Collaboration
Buchwald, Dedra,Kaprio, Jaakko,Hopper, John L.,Sung, Joohon,Goldberg, Jack,Fortier, Isabel,Busjhan, Andreas,Sumathipala, Athula,Cozen, Wendy,Mack, Thomas,Craig, Jeffrey M.,Harris, Jennifer R. Cambridge University Press 2014 TWIN RESEARCH AND HUMAN GENETICS - Vol.17 No.6
<P>The International Network of Twin Registries (INTR) aims to foster scientific collaboration and promote twin research on a global scale by working to expand the resources of twin registries around the world and make them available to researchers who adhere to established guidelines for international collaboration. Our vision is to create an unprecedented scientific network of twin registries that will advance knowledge in ways that are impossible for individual registries, and includes the harmonization of data. INTR will also promote a broad range of activities, including the development of a website, formulation of data harmonization protocols, creation of a library of software tools for twin studies, design of a search engine to identify research partners, establishment of searchable inventories of data and biospecimens, development of templates for informed consent and data sharing, organization of symposia at International Society of Twin Studies conferences, support for scholar exchanges, and writing grant proposals.</P>