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혼종모형을 이용한 호스피스팀원의 영성적 자기돌봄 개념분석
장선희 ( Jang Sunhee ),이성주 ( Lee Sungju ),김민영 ( Kim Minyeong ) 한국정신간호학회 2023 정신간호학회지 Vol.32 No.4
Purpose: The study aimed to clarify the concept of spiritual self-care in hospice team members. Methods: To analyze the concept of spiritual self-care of hospice care team, the study was carried out using Schwartz-Barcott and Kim's hybrid model including theoretical, fieldwork and final analytic stages. In the theoretical stage, 'spirituality', 'spiritual well-being', 'spiritual health', 'spiritual care', and 'self-care' were set as search terms, and the resulting 107 related works of domestic and international literature were analyzed. In the field survey stage, data were collected from nurses and spiritual experts with more than 5 years of experience in spiritual self-care. Results: The concept of spiritual self-care is to realize the meaning and purpose of life while constantly maintaining relationships with oneself, neighbors, communities, and the absolute, utilize transcendence and internal resources, strengthen professional competence, maintain work-life balance, and achieve spiritual well-being. It was identified as a dynamic state to realize. The quality attributes of the concept of spiritual self-care were found to have 5 attributes and 15 indicators. Conclusion: The attributes and indicators derived through this study will be helpful in understanding the concept of hospice team members' spiritual self-care. In addition, as a way to continuously grow and train professional hospice team members, it can be used to develop a spiritual self-care assessment tool and an educational program to prevent burnout.
Sungju Choi,Youngjin Kang,Jonghwa Kim,Jungmok Kim,Sung-Jin Choi,Dong Myong Kim,Ho-Young Cha,Hyungtak Kim,Dae Hwan Kim 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.5
It is essential to acquire an accurate and simple technique for extracting the interface trap density (Dit) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting Dit and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and biasdependent capacitance components.
Sungju Choi,Hyeongjung Kim,Chunhyung Jo,Hyun-Suk Kim,Sung-Jin Choi,Dong Myong Kim,Park, Jozeph,Dae Hwan Kim IEEE 2015 IEEE electron device letters Vol.36 No.12
<P>Thin-film transistors using In-Ga-Zn-O (IGZO) semiconductors were evaluated under positive bias stress with different gate and drain voltages (VGS and VDS, respectively). The transfer characteristics with respect to stress time were examined, focusing on the threshold voltage (V-T) values obtained when the source and drain electrodes are interchanged during readout (forward and reverse VDS sweep). The V-T values shift toward either negative or positive values during stress, while transitions from negative to positive shifts are also observed. The negative V-T shift under positive bias stress is interpreted to occur by the generation of donor-like states related to ionized oxygen vacancies. On the other hand, positive V-T shifts result from the trapping of electrons near the IGZO/gate insulator interface. The transitions from negative to positive V-T shift are believed to result from the local electron trapping mechanism that gradually takes over donor-like state creation. From the experimental results and TCAD device simulation, it is suggested that a competition occurs between donor-like state creation and electron trapping. The relative magnitudes of the VGS and VDS fields determine which mechanism dominates, providing an analytical insight for the design of stable devices for driving transistors in AMOLED backplanes.</P>
Sungju Choi,Hyeongjung Kim,Chunhyung Jo,Hyun-Suk Kim,Sung-Jin Choi,Dong Myong Kim,Park, Jozeph,Dae Hwan Kim IEEE 2015 IEEE electron device letters Vol.36 No.7
<P>Thin-film transistors using In-Ga-Zn-O (IGZO) semiconductors were evaluated under current stress by applying positive voltages to the gate and drain electrodes. Initially, the transfer characteristics exhibit identical threshold voltages (V-T) when the source and drain electrodes are interchanged during measurement (forward and reverse V-DS sweep). However, as stress time increases, larger shifts in V-T are observed under forward V-DS sweep than under reverse V-DS sweep conditions. Subgap states analyses based on the photoresponse of capacitance-voltage (C-V) curves suggest that local annihilation of donor-like traps occurs near the drain electrode. Hump-like features are clearly observed in the C-V curves collected between the drain and gate electrodes, while they do not appear in the C-V data obtained between the source and the gate. Based on the above, a local charge trapping model is introduced in order to interpret the device degradation. In this model, the major carrier electrons are trapped more abundantly near the source electrode due to the presence of a Schottky junction between IGZO and the source/drain electrodes.</P>
Kim, Jonghwa,Choi, Sungju,Jang, Jaeman,Jang, Jun Tae,Kim, Jungmok,Choi, Sung-Jin,Kim, Dong Myong,Kim, Dae Hwan The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.5
We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.
Kim Chul,Sung Jidong,Han Jae-Young,Jee Sungju,Lee Jang Woo,Lee Jong Hwa,Kim Won-Seok,Bang Heui Je,Baek Sora,Joa Kyung Lim,Kim Ae Ryoung,Lee So Young,Kim Jihee,Kim Chung Reen,Kwon Oh Pum 대한의학회 2022 Journal of Korean medical science Vol.37 No.14
Background: In Korea, the actual distribution of cardiac rehabilitation (CR) to the clinical field is insufficient due to the many barriers for cardiovascular patients to participate in CR. Community-based CR is a useful alternative to overcome these obstacles. Through a nationwide survey, we investigated the possibility of regional medical and public health management institutes which can be in charge of community-based CR in Korea. Methods: The questionnaires on recognition of CR and current available resources in health-related institutions were developed with reference to the CR evaluation tools of York University and the International Council of Cardiovascular Prevention and Rehabilitation. The questionnaires were sent to regional public and private medical institutions and public health management institutions. Results: In total, 2,267 questionnaires were sent to 1,186 institutions. There were 241 and 242 responses from 173 and 179 regional private and public medical institutions, respectively. And a total of 244 responses were gathered from 180 public health management institutions. Although many institutions were equipped with the necessary facilities for exercise training, there were few patient-monitoring systems during exercise. Most institutions were aware of the need for CR, but were burdened with the cost of establishing personnel and facilities to operate CR. Conclusion: Most regional medical, and public health management institutions in Korea are unprepared for the implementation of community-based CR programs. To encourage the utilization of such, there should be efforts to establish a national consensus.
Kim, Junyeap,Yoo, Hanbin,Lee, Heesung,Kim, Seong Kwang,Choi, Sungju,Choi, Sung-Jin,Kim, Dae Hwan,Kim, Dong Myong Elsevier 2018 Microelectronics and reliability Vol.85 No.-
<P>Parasitic resistances cause degradation of transconductance (g(m)), cutoff frequency (f(T)), current driving capability, and long term reliability of MOSFETs. We report a comprehensive extraction of parasitic resistance components in MOSFETs for the contact, the spreading current path, and the lightly doped drain region caused by the process, structure, and degradation. We considered the gate bias (V-GS)-dependence and the asymmetric overlap length (L-ov,L-SD) in the source and drain. We report systematically integrated extraction technique combined with the channel resistance method, the transfer length method, the dual-sweep combinational transconductance technique, the open drain method, and the parasitic junction current method. V Gs -independent resistances were separated to be R-Se = 6.8-6.9 Omega, R-De = 7.4-7.5 Omega, R-SUB = 7.4-7.6 Omega, R-So = 1.8-2.1 Omega, and R-Do = 3.2-3.5 Omega for MOSFETs with and at W/L = 50 mu m/0.27 mu m. V-GS-dependent intrinsic resistances are obtained to be R-Si = 1.9-4.4 Omega, R-Di = 1.4-3.2 Omega for the same devices. The V-GS-dependent intrinsic channel resistance (R-CH) is extracted with different channel lengths for MOSFETs with L = 0.18 mu m/0.27 mu m/0.36 mu m.</P>
Clinical Practice Guideline for Cardiac Rehabilitation in Korea
Chul Kim,성지동,Jong Hwa Lee,Won-Seok Kim,Goo Joo Lee,Sungju Jee,Il-Young Jung,Ueon Woo Rah,Byung Ok Kim,Kyoung Hyo Choi,Bum Sun Kwon,유승돈,Heui Je Bang,Hyung-ik Shin,Yong Wook Kim,Heeyoune Jung,Eung Ju Ki 대한흉부외과학회 2019 Journal of Chest Surgery (J Chest Surg) Vol.52 No.4
Background: Though clinical practice guidelines (CPGs) for cardiac rehabilitation (CR) are an effective and widely used treatment method worldwide, they are as yet not widely accepted in Korea. Given that cardiovascular disease is the second leading cause of death in Korea, it is urgent that CR programs be developed. In 2008, the Government of Korea implemented CR programs at 11 university hospitals as part of its Regional Cardio-Cerebrovascular Center Project, and 3 additional medical facilities will be added in 2019. In addition, owing to the promotion of CR nationwide and the introduction of CR insurance benefits, 40 medical institutions nationwide have begun CR programs even as a growing number of medical institutions are preparing to offer CR. The purpose of this research was to develop evidence-based CPGs to support CR implementation in Korea. Methods: This study is based on an analysis of CPGs elsewhere in the world, an extensive literature search, a systematic analysis of multiple randomized control trials, and a CPG management, development, and assessment committee comprised of 33 authors—primarily rehabilitation specialists, cardiologists, and thoracic surgeons in 21 university hospitals and 2 general hospitals. Twelve consultants, primarily rehabilitation, sports medicine, and preventive medicine specialists, CPG experts, nurses, physical therapists, clinical nutritionists, and library and information experts participated in the research and development of these CPGs. After the draft guidelines were developed, 3 rounds of public hearings were held with staff members from relevant academic societies and stakeholders, after which the guidelines were further reviewed and modified. Results: CR involves a more cost-effective use of healthcare resources relative to that of general treatments, and the exercise component of CR lowers cardiovascular mortality and readmission rates, regardless of the type of coronary heart disease and type and setting of CR. Conclusion: Individualized CR programs should be considered together with various factors, including differences in heart function and lifestyle, and doing so will boost participation and adherence with the CR program, ultimately meeting the final goals of the program, namely reducing the recurrence of myocardial infarction and mortality rates.
Jonghwa Kim,Sungju Choi,Jaeman Jang,Jun Tae Jang,Jungmok Kim,Sung-Jin Choi,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.5
We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS (VGS=13 V and VDS=13 V), the parallel shift of the transfer curve into a negative VGS direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (ΔVT), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ΔVT were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy (V<SUP>o2+</SUP>). In addition, it was also confirmed that the wider channel width corresponds with more negative DVT. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.
Choi, Sungju,Kang, Youngjin,Kim, Jonghwa,Kim, Jungmok,Choi, Sung-Jin,Kim, Dong Myong,Cha, Ho-Young,Kim, Hyungtak,Kim, Dae Hwan The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.5
It is essential to acquire an accurate and simple technique for extracting the interface trap density ($D_{it}$) in order to characterize the normally-off gate-recessed AlGaN/GaN hetero field-effect transistors (HFETs) because they can undergo interface trap generation induced by the etch damage in each interfacial layer provoking the degradation of device performance as well as serious instability. Here, the frequency-dependent capacitance-voltage (C-V) method (FDCM) is proposed as a simple and fast technique for extracting $D_{it}$ and demonstrated in normally-off gate-recessed AlGaN/GaN HFETs. The FDCM is found to be not only simpler than the conductance method along with the same precision, but also much useful for a simple C-V model for AlGaN/GaN HFETs because it identifies frequency-independent and bias-dependent capacitance components.