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Li, Meng,Shin, Hong-Sik,Jeong, Kwang-Seok,Oh, Sung-Kwen,Lee, Horyeong,Han, Kyumin,Lee, Yongwoo,Lee, Song-Jae,Lee, Ga-Won,Lee, Hi-Deok Institute of Pure and Applied Physics 2014 Japanese Journal of Applied Physics Vol. No.
<P>H2O or NH4OH (5%) precursor pretreatment in the chamber was carried out before the thermal atomic layer deposition (ALD) of an Al2O3 passivation layer on p-type crystal Si. It was found that the density of negative oxide fixed charges significantly increased, the Al-O combination at the interface changed, the Al/O atomic at the interface of Al2O3/Si decreased, and the effective lifetime increased. The pretreated samples with changes in the Al-O structure at the interface, which made the interface more oxygen-rich, were believed to be the reason for the improvement of the field effect passivation in Al2O3 passivated crystal Si solar cell applications. (C) 2014 The Japan Society of Applied Physics</P>
Horyeong Lee,Meng Li,Jungwoo Oh,Hi-Deok Lee 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
In this paper, the effective electron Schottky barrier height (ФBn) of the Ni silicide/nsilicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 ㎚). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ФBn is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 ㎚) and Sb/Ni/TiN (10/15/10 ㎚) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ФBn of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 ㎚) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.
Lee, Horyeong,Li, Meng,Oh, Jungwoo,Lee, Hi-Deok The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.1
In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.
Oh, Sung-Kwen,Shin, Hong-Sik,Jeong, Kwang-Seok,Li, Meng,Lee, Horyeong,Han, Kyumin,Lee, Yongwoo,Lee, Ga-Won,Lee, Hi-Deok The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.1
In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.
A Novel Atomic Layer Deposited Al₂O₃ Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell
Sung-Kwen Oh,Hong-Sik Shin,Kwang-Seok Jeong,Meng Li,Horyeong Lee,Kyumin Han,Yongwoo Lee,Ga-Won Lee,Hi-Deok Lee 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
In this paper, Al2O3 film deposited by thermal atomic layer deposition (ALD) with diluted NH4OH instead of H2O was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of Al2O3 film was proportional to the NH4OH concentration. Al2O3 film deposited with 5 % NH4OH has the greatest negative fixed oxide charge density (Qf), which can be explained by aluminum vacancies (VAl) or oxygen interstitials (Oi) under O-rich condition. Al2O3 film deposited with NH4OH 5 % condition also shows lower interface trap density (Dit) distribution than those of other conditions. At NH4OH 5 % condition, moreover, Al2O3 film shows the highest excess carrier lifetime (τPCD) and the lowest surface recombination velocity (Seff), which are linked with its passivation properties. The proposed Al2O3 film deposited with diluted NH4OH is very promising for passivation layer and AR coating of the p-type c-Si solar cell.
Sung-Kwen Oh,Hong-Sik Shin,Kwang-Seok Jeong,Meng Li,Horyeong Lee,Kyumin Han,Yongwoo Lee,Ga-Won Lee,Hi-Deok Lee 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.6
This paper presents a study of the process temperature dependence of Al₂O₃ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of Al₂O₃ film maintained almost the same until 250 ℃, but decreased from 300 ℃. Al₂O₃ film deposited at 250 ℃ was found to have the highest negative fixed oxide charge density (Qf) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), Al₂O₃ film deposited at 250 ℃ had the lowest slow and fast interface trap density. Actually, Al₂O₃ film deposited at 250 ℃ showed the best passivation effects, that is, the highest excess carrier lifetime (τPCD) and lowest surface recombination velocity (Seff) than other conditions. Therefore, Al₂O₃ film deposited at 250 ℃ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.
Oh, Sung-Kwen,Shin, Hong-Sik,Jeong, Kwang-Seok,Li, Meng,Lee, Horyeong,Han, Kyumin,Lee, Yongwoo,Lee, Ga-Won,Lee, Hi-Deok The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.6
This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.
Meng Li,Hong-Sik Shin,Kwang-Seok Jeong,Sung-Kwen Oh,Horyeong Lee,Kyumin Han,Ga-Won Lee,Hi-Deok Lee 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.1
Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of Al2O3 film in crystal Si solar cells. To characterize the effects of PDA on Al2O3 and the interface, metalinsulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from 400~700 °C and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin Al2O3 film in c-Si solar cells. PDA by RTP at 400 °C results in better passivation than a PDA at 400 °C in forming gas (H2 4% in N2) for 30 minutes. A high thermal budget causes blistering on Al2O3 film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of Al2O3 film. Optimal PDA conditions should be studied for specific Al2O3 films, considering blistering.
Li, Meng,Shin, Hong-Sik,Jeong, Kwang-Seok,Oh, Sung-Kwen,Lee, Horyeong,Han, Kyumin,Lee, Ga-Won,Lee, Hi-Deok The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.1
Different kinds of post-deposition annealing (PDA) by a rapid thermal process (RTP) are used to enhance the field-effect passivation of $Al_2O_3$ film in crystal Si solar cells. To characterize the effects of PDA on $Al_2O_3$ and the interface, metal-insulator semiconductor (MIS) devices were fabricated. The effects of PDA were characterized as functions of RTP temperature from $400{\sim}700^{\circ}C$ and RTP time from 30~120 s. A high temperature PDA can retard the passivation of thin $Al_2O_3$ film in c-Si solar cells. PDA by RTP at $400^{\circ}C$ results in better passivation than a PDA at $400^{\circ}C$ in forming gas ($H_2$ 4% in $N_2$) for 30 minutes. A high thermal budget causes blistering on $Al_2O_3$ film, which degrades its thermal stability and effective lifetime. It is related to the film structure, deposition temperature, thickness of the film, and annealing temperature. RTP shows the possibility of being applied to the PDA of $Al_2O_3$ film. Optimal PDA conditions should be studied for specific $Al_2O_3$ films, considering blistering.