전력선 통신을 이용한 PC상의 조광제어 시스템

박종연,김한수 강원대학교 정보통신연구소 2001 정보통신논문지 Vol.5 No.-

We studied about the lighting control system on pc using PLM(Power Line Modem). The PLM is composed of FSK IC-chip and the circuit for the power line communication. We developed the control proram using visual c++ language on PC for dimming the lamps. In this paper dimming controller was made with PIC16F974 and its communication speed was1200 boats rates.

좌심실 수축기 기능장애를 동반한 양수색전증 1예

박대균,홍경순,두영철,한규록,오동진,유규형,임종윤,고영박,이광학,이영,송원근,김현태 대한순환기학회 1999 Korean Circulation Journal Vol.29 No.8

충격관내에서의 n-핵산-산소 혼합물의 점화지연에 관한 연구

박종회,최기영,윤석승,최성락 충남대학교 자연과학연구소 1984 忠南科學硏究誌 Vol.11 No.1

The ignition delay of n-hexane-oxygen mixture in a shock tube has been theoretically calculated adapting the ignition reaction model of the H_2-O_2 fuel system at pre-ignition step. It has been presumed that the reaction model for the oxidation of n-butane, which was proposed previously, would be safely applied for the oxidation of n-hexane.

치수절단술에 사용되는 약제가 백서 치배 및 치배주위조직세포에 미치는 영향에 관한 ^3H-thymidine을 이용한 자기방사법적인 연구

박경주,이종헌,임창윤 단국대학교 치의학연구소 1992 논문집 Vol.4 No.-

Formocresol(FC) had been widely used as medicament for pulpotomy, but because FC have strong toxicity, carcinogenic potential, and strong diffusible properties in tissues, Glutaraldehyde, another medicament for pulpotomy was greatly presented by many investigators and practitioners. Although many investigators had studied difference of two medicament's effects on periodontal tissues and tooth germ, there were no manuscripts of cellular activity about these medicaments applied to teeth, but there were almost clinical, histopathological studies. Especially in the investigative effects on tooth germ, the results were controversal. Thus to investigate about effects on cellular actiity of perigerminal tissue and tooth germ of rat, author presented the cellular activity and the pathologic change through calculating Thymidine labelling index(TLI) from autoradiographic technique using 3H-thymidine after these medicaments were applied to tooth. The obtained results were as follows. 1. Inflammation was initiated after one week of FC and two weeks of GA. It was thought that diffusible property of GA was lesser than that of FC. 2. In group treated with FC, inflammation, vasodilation and bone destruction continuously increased for all periods of experiment and the feature of 8 weeks was very severe. But in group treated with GA, inflammation, vasodilation and bone destruction slightly incresed for all period of experment. 3. TLI was increased after two weeks of FC, but decreased after four weeks because of different accumulative concentration between 2 and 4 weeks. 4. GA treated group which did not show the change of the cellular activity of perigerminal tissue and tooth germ presented the slight effects on these cells. 5. Changes of cellular activities in FC treated group did not result from inflammation, but formocresole's property itself. And bone destruction was derived from secondary effects of inflammation. 6. The fact that FC arose severe inflammation and change of cellular activity reflected that FC might affected

ZnS 螢光體의 結晶構造轉移에 따른 Photoluminescence 硏究

朴鍾允,李悳源,洪泰植 성균관대학교 기초과학연구소 1985 論文集 Vol.36 No.1

A comprehensive study of ZnS : [Zn] and ZnS ; [Zn] Cu phosphors has been carried out by examining spectral distribution curves of emission during excitation by ultraviolet (3650 Å). Transition from the cubic form to the hexagonal one in crystal structure of ZnS occured at 1150℃. There were maximum peaks position in luminescence spectra of cubic and hexagonal structure at about 4650 Å and 4500 Å, respectively. By doping Cu as an impurity, maximum peak positions in both case were shifted to the long wavelength. These phenomena seem to be caused by interstitial defect due to impurity.

Nickel 化合物의 EXAFS에 관한 硏究

朴鍾允,李悳源,文昌淳 성균관대학교 기초과학연구소 1985 論文集 Vol.36 No.2

At Sufficiently high photoelectron kinetic energies, typically above 50 ev from the absorption edge, phase shifts are insensitive to chemical environment. Determination of φ_j(k) for an atom pair in a given model system of known distance r_j^m enable the determination of distance r_j^u in an "unknown" system containing the same atom pair. In the paper we are using NiSe as the known system and NiSe_2 as the unknown system. By the chemical transferability of phase shift, the distance between Ni and Se estimated 2.38 Å in Nise_2.

Cs이 흡착된 Si(111)7×7표면에 대한 RHEED연구

박종윤,이순보,이경원,안기석,강건아 성균관대학교 1991 論文集 Vol.42 No.1

Cesium-adsorbed surface structures on Si(111)7×7 were investigated at room and high temperatures(200∼700℃) by RHEED. The RHEED patterns of Si(111) 7×7 was changed to the modified 7×7 and the 1×1 patterns with increasing the deposition times of Cs at RT. It was observed that the structure of the Cs-adsorbed Si (111) 7×7 surface at saturation coverage is the 1×1 structure at RT. The ◁그림삽입▷(원문을 참조하세요) 1 and 1×1 structures appeared successively at the adsorption temperature of 300℃, 350∼400℃ and 450℃, respectively. After subsequent heating of 1×1 surface above 550℃ and of ◁그림삽입▷(원문을 참조하세요) surface above 600℃, each RHEED pattern gradually returned to the original Si(111)7×7 pattern. 상온 및 200∼700℃의 Si(111)7×7 표면에 Cs(Cesium)을 증착하였을 때 표면격자구조의 변화를 RHEED로 관측하였다. Cs 증착시 Si(111)7×7 기판의 온도가 상온인 경우, 포화 덮임률에 도달했다고 추정되는 일정 증착시간 전에는 원래의 깨끗한 Si(111)7×7 패턴과 거의 유사한 변형된(modified) Si(111)7×7-Cs 패턴이 관측되었다. 그후 포화 덮임률에서는 1×1패턴이 관측되고 증착량을 증가시켜도 패턴의 변화는 관측되지 않았다. 이 구조를 다시 annealing시키면 약 550℃부터 서서히 원래의 7×7구조로 되돌아가기 시작한다. Si(111)7×7기판의 온도를 220∼700℃로 유지하면서 Cs을 증착시킨 경우에 약 250℃까지는 상온에서와 비슷한 변형된(modified) 7×7이 관측되고 약 300℃에서는 ◁그림삽입▷(원문을 참조하세요) 350∼400℃ 정도에서는 ◁그림삽입▷(원문을 참조하세요)과 3×1이 겹쳐셔 관측되었다. 그리고 450℃ 이상에서는 1×1구조가 관측되었다. 이때 약 300℃에서 형성된 ◁그림삽입▷(원문을 참조하세요) 350℃에서 형성된 ◁그림삽입▷(원문을 참조하세요) 3+3×1 구조는 약 500℃ 정도까지 다시 annealing함에 따라 다리 1×1구조로 상전이가 일어난후, 약 600℃부터 원래의 7×7의 초격자점들이 나타나기 시작했다. 이들 결과로부터 Si(111)7×7 표면에 Cs을 증착하는 경우에는 일정한 포화 덮임률(saturation coverage)이 있는 것으로 추정되고, 이 덮임률에서 관측된 고온에서의 상전이는 증착량(증착시간)에는 무관하고 온도에만 의존함을 알 수 있었다. 또한 1×1 구조와 ◁그림삽입▷(원문을 참조하세요) 구조에 대하여 Cs의 탈착은 각각 약 550℃와 600℃에서 일어나기 시작하여 700℃에서 완전히 탈착됨을 알 수 있었다.

이온 펌프의 제작과 특성에 관한 연구

박종윤,이순보,부진효,신익조 성균관대학교 기초과학연구소 1990 論文集 Vol.41 No.1

By using theoretical model suggested by H. Hartwig et al., performance of sputter ion pump (SIP) was calculated and a SIP was constructed. Measurement of pumping speed of the SIP has been performed with the differential pumping method. The pumping speed for N_2 gas is 48 l/s, and for Ar gas is 20 l/s. These results agree with the theoreticaly expected values.

K이 흡착된 Si(111)7×7표면에 대한 RHEED 연구

박종윤,이순보,이경원,안기석,신익조,강건아 성균관대학교 1990 論文集 Vol.41 No.2

상온 및 200℃∼600℃의 Si(111) 7×7 표면에 칼륨(K)을 증착하였을 때의 표면격자구조 변화를 RHEED로 관측하였다. K 증착시 Si(111)7×7 기판의 온도가 상온인 경우, 어느 일정한 증착시간(포화덮임률에 도달했다고 추정되는 증착시간)이 지난 후에는 원래의 깨끗한 Si(111)7×7 패턴과 유사한 Si(111) 7×7-K 패턴이 관측되었고, 증착시간을 증가시켜도 RHEED 패턴은 변화하지 않았다. 이것을 annealing하면 350℃까지는 RHEED 패턴에 변화가 없다가 그 이상의 온도가 되면 서서히 원래의 7×7 패턴으로 되돌아가기 시작한다. Si(111) 7×7기판의 온도를 200℃∼600℃로 유지하면서 K을 일정시간(450℃에서 3×1이 형성되는 증착시간)이상 증착시킨 경우에 250℃까지는 상온의 경우와 비슷한 형태의 변형된 7×7 패턴이 관측되고, 300℃∼550℃일때는 3×1, 550℃ 이상에서는 1×1 구조가 관측되었다. 이때 300℃∼550℃에서 형성된 Si(111) 3×1-K 구조는 450℃에서 1분 정도 annealing 하면 항상 Si(111) 1×1-K 구조로 상전이가 일어남을 관측하였다. Potassium adsorbed surface structures of Si(111) 7×7 surface at room and high temperatures(200℃∼600℃) were investigated by RHEED. Potassium adsorption on the Si(111) 7×7 surface to saturated coverage at room temperature changed the RHEED pattern of Si(111) 7×7 to Si(111) 7×7-K. Subsequent heating of the Si(111) 7×7-K surface above 350℃ results in a Si(111) 7×7 with desorbing K. The RHEED pattern of the K-adsorbed on the Si(111) 7×7 surface up to the adsorption temperature of 250℃ was the modified 7×7 pattern, quite similar to that of the Si(111) 7×7-K, observed at room temperature. The 3×1 structure was observed in the temperature of adsorption between 300℃ and 550℃. Regardless of the adsorption temperature, a phase transition always took place from the Si(111) 3×1-K structure to Si(111) 1×1-K after annealing at 450℃ over 1 minute.

Mo-실리사이드 형성 메카니즘에 관한 연구 : Ⅱ. 表面 Morphology와 電氣的 特性 Ⅱ. Surface Morphologies and Electrical Properties

박종윤,한전건,이상균,김기선 성균관대학교 기초과학연구소 1992 論文集 Vol.43 No.2

Mo-disilicide 박막은 n-Si(100) 기판위에 전자선 증착과 이어지는 진공 또는 질소 분위기에서 급속 열처리(RTA : Rapid Thermal Annealing) 장치에 의한 열적 확산(thermal diffusion)법에 의해서 만들어졌다. 이들 박막의 화학적 조성과 morphology는 XRD, AED(ADP), TEM, NOM에 의해서 분리되어졌다. Mo/Si계의 안정된 최종상은 tetragonal-MoSi₂였고, 표면 morphology와 grain size는 상호 의존하며 열처리 온도에 따하서 크기가 증가되었다. 상온에서 증착한 박막에서는 계면에서 얇은 SiO_2 층이 보였고 이 층의 존재로 Si의 확산이 억제됨을 확인하였으며, 기판온도를 400℃로 유지하며 pre-annealing을 120분 동안 부여한 시료에서는 Mo-silicide가 columnar 구조로 성장됨이 보였다. 그리고, 전기적 특성은 sheet 저항과 Schotty 장벽높이가 조사되었는데, 열처리 온도 증가에 따라 감소하는 sheet저항은 grain size에 의존하며, 최저치는 700℃에서 1분 동안 열처리 한 시료의 값인 2.1Ω/□으로 열처리 온도 증가에 대해 더 이상 변화하지 않는 최종적인 값이다. 그러나 Schotty barrier height는 0.56eV로 열처리 온도, 분위기에 따라 변화하지 않으며 hexagonal-과 tetragonal-MoSi₂둘 모두에서 같았다. Molybdenum disilicide films have been prepared onto n-Si(100) substrates with electron-beam deposition and sequently post-annealing by rapid thermal annealing in the ambient of N₂ or vacuum. The chemical compositions and morphology of films were analyzed by XRD, ADP, TEM, and NOM methods. We confirm that the stable phase of Mo/Si system is tetragonal-MoSi₂ phase, and the surface morphology and grain size were depended upon the annealing temperature. There are SiO₂ layers at the interface of MoSi₂ film evaporated at room temperature and the thermal diffusion of Si was interrupted by the layers. However, the thin films with the substrate temperature of 400℃ have growned to the MoSi₂ with columnar structure. We measured the electrical properties, the sheet resistance and Schottky barrier height, of MoSi₂ thin films. The sheet resistance was depended upon the grain size and the smallest value was 2.1Ω/□ at room temperature after annealing at 700℃ for 1 min. The Schottky barrier height was independed upon the annealing temperature and ambient, and was about 0.56eV for hexagonal- and tetragonal-MoSi₂.