베이커리 전문점의 기능성 제품속성에 따른 지각된 가치가 구매행동에 미치는 영향 - 광주광역시를 중심으로 -

이관교,최상호 한국호텔리조트학회 2023 호텔리조트연구 Vol.22 No.2

This study is a study on the effect of perceived value on purchase behavior according to the functional product attributes of bakery specialty stores. From June 1st to June 30th, 2022, 275 copies (92 %) of the questionnaire was finally used for empirical analysis. Hypothesis verification was conducted using the program of SPSS 21.0. First, it was found that the functional product attributes of bakery specialty stores had a partially significant effect on the perceived value. Second, it was found that functional product attributes of bakery specialty stores had a partially significant effect on purchase behavior. Third, perceived value was found to have a significant effect on purchase behavior. Therefore, if product development is continued with an emphasis on the development of functional products with healthiness, quality, originality, and diversity, it gives consumers a sense of value and satisfaction and increases their desire to purchase, suggesting that purchasing behavior is achieved.

Hot Wall Epitaxy(HWE)법에 의한 AgGaSe2 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구

이관교,홍광준 한국센서학회 2006 센서학회지 Vol.15 No.6

Single crystal AgGaSe2 layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 420oC with hot wall epitaxy (HWE) system by evaporating AgGaSe2 source at 630oC. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal AgGaSe2 thin films measured with Hall effect by van der Pauw method are 4.051016 /cm3, 139cm2/V s at 293K, respectively. The temperature dependence of the energy band gap of the AgGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.9501eV (8.79104 eV/K)T2/(T + 250K). The crystal field and the spin-orbit splitting energies for the valence band of the AgGaSe2 have been estimated to be 0.3132eV and 0.3725eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the So definitely exists in the 5 states of the valence band of the AgGaSe2. The three photocurrent peaks observed at 10K are ascribed to the A1-, B1-, and C1-exciton peaks for n = 1.

Hot Wall Epitaxy (HWE)법에 의한 CuInse₂ 단결정 박막 성장과 열처리 효과

이관교,홍광준,Lee Gyungou,Hong Kwangjoon 한국재료학회 2004 한국재료학회지 Vol.14 No.11

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

경계점에서 파동의 속도변화 원인에 관한 고찰 : Coil Spring 파동을 중심으로

이관교 朝鮮大學校 師範大學 1974 師大論文集 Vol.5 No.-

When pulse is given to a coil spring, the cause of variables of velocity of pulse at the boundary of the coil spring and the velocity of pulse transmitted to the coil spring are proportional to the tension. Take two coil springs of equal length. If one of them is extended by force, the velocity of pulse of the extended coil spring is proportionally faster to extension than that of the unextended one. From the point of view of pulse transmission, each of the two coil springs may be said a completely different medium from the other. When two pulses collides each other, the velocity of pulse equals the composition of the two variable positions; the maximum variable position also equals the sum of the two pulses.

HgGa₂S₄ 단결정의 광학적 특성연구

이관교,이상열,강종욱,이봉주,김형곤,현승철,방태환 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.11

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

CdTe 단결정 성장과 광전기적 특성

이관교,유상하,홍광준 조선대학교 동력자원연구소 1987 動力資源硏究所誌 Vol.9 No.2

The single crystak if CdTe was grown by the Bridgman method and lattice constant = 6.48Å was determined from X-ray diffraction. Temperature dependence of the energy band gap have been found for measurements of transmission, photoconductivity and photocurrent variations versus wavelength at 50˚K∼300˚K. The energy band gap was measured to be Eg=1.61 eV at 0˚K by extrapolation method, and temperature coefficient β was -4.×10^-4 eV/˚K by photoconductivity experiments.

探究的 科學學習을 위한 中·高等學校 科學室 운영 실태에 대한 考察

李官敎 조선대학교 기초과학연구소 1981 自然科學硏究 Vol.4 No.1

The trend of modern science education is to study science investigatively by virtue of experiment in the laboratory, by the students themselves rather than the teacher. Accordingly, this paper is an attempt to grasp the actual condition of supervision of science laboratories in secondary schools through questionaires given to science teachers in secondary schools and an inquiry into improvement measures for establishing an investigative environment and furthering degree of the student participation in experimental learning.

Comparison of the AM and FM wave forms

Lee,Kwan Kio,Wee,Sung Dong 朝鮮大學校 師範大學 1974 師大論文集 Vol.5 No.-

In every superposition wave, it can be shown that the sine waves collects into a single band wave through the experiment of an oscilloscope. In the AM waves the amplitude varies every hour but in the FM waves the frequency varies momentarily, and the right path modulaion in the AM waves indicates the ratio of the modulation, while the right path modulation in the FM waves indicates an index of the modulation. The frequency of the FM waves varies according to the signal of the modulation every hour, but the frequency of the AM waves does not vary. The FM wave is complex compared with the production of the band wave in AM waves. In AM and FM waves, we can see directly that the modulation of actual waves of takes place when the frequency deviation expresses a vector under the modulation condition. A vector of an FM wave seems to indicate a composition of a medium vector and a side vector.

ZnO 박막의 결정구조 및 광학적 전기적 특성

서동주,이관교 조선대학교 기초과학연구소 1987 自然科學硏究 Vol.10 No.1

Thin polycrystalline films of ZnO were deposited on the glass substrate by spray pyrolysis. The ZnO films were obtained at various temperature ranging from 400℃to 480℃. The structural, electrical and optical properties of the ZnO thin films were studied. The ZnO thin film have a hexagonal system and polycrystalline with orystal orientation of (002), (101) and (100). The resistivity of ZnO thin films decrease with increasing the substrate temperature, while the mobillity and carrier concentration increase.

HWE에 의한 $CdGa_2Se_4$ 박막 성장과 광전도 특성

홍광준,이관교,이상열,유상하,신용진,서상석,정준우,정경아,신영진 한국결정성장학회 1997 한국결정성장학회지 Vol.7 No.3

$CdGa_2Se_4$, epilayer of tetragonal type are grown on Si(100) substrate by hot wall epitaxy method. The source and substrate temperature is $580^{\circ}C$ and $420^{\circ}C$ respectively, and the thickness of the film is 3 $\mu \textrm{m}$. The crystallihe structure of epilayers were investigated by double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Se vapor the photoconductive characteristics are best. Then we obtained the sensitivity of 0.98, the value of pc/dc of $9.62{\times}10^6$, the MAPD of 321 ㎽ and the rise and decay time of 9 ㎳ and 9.5 ㎳, respectively.