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최운섭 陸軍士官學校 1999 한국군사학논집 Vol.55 No.-
This study was conducted to review theories about what is called ecological city that emerged as a result of urban environmental degradation and to identify topics that should be studied more intensively. Ecological city, deduced from many of its definitions, is defined as the city where natural ecology and human activity systems circulate together as a stable cooperative system with sustainable input-output environment. Chadwick's study about British cities in mid-19th century is regarded as the first one about ecological city, and since then many studies were conducted in the USA, Germany, Japan and so on. But many questions are neglected and/or disregarded in these studies. Therefore three topics were pointed out in this study which require more studies to make them more complete: urban system, economic base of ecological city. Finally, ecological city should be studied in the wider concept of sustainable city reflecting global environmental crisis so that it can help solve urban environmental problems more effectively.
Interfacial Study of Metal Oxide with Source-Drain Electrodes and Oxide Semiconductor by XPS
최운섭 대한금속·재료학회 2012 ELECTRONIC MATERIALS LETTERS Vol.8 No.1
As an interlayer for source-drain electrodes in solution processed zinc tin oxide (ZTO) thin-film transistor,MoO3 was introduced between aluminum source-drain electrodes and oxide semiconductor. MoO3 was detected not only in the interlayer, but in the source-drain electrodes and oxide semiconductor layer. The chemical configuration and the structural configuration were confirmed by XPS interfacial study and by TEM analysis,respectively. From these analytical tools, we found that the interlayer exists as a chemically mixed state between the layers, source-drain electrodes and oxide semiconductor.
Subbasin Characteristics and Hydrological Response to Anticipated Urbanisation
최운섭 국토지리학회 2008 국토지리학회지 Vol.42 No.4
This study investigated the relationship between the hydrological response of a river basin to anticipatedurbanisation and its subbasin characteristics by applying a hydrological model (HSPF) with land use scenariosgenerated by an urban growth model (LEAM). The hydrological model was set up and run for the Kishwaukee Riverbasin in northeastern Illinois, USA. The results show that the subbasin size and imperviousness were found to be morecorrelated to runoff changes than slope. However, no basin characteristics have significant relationships with percentchanges in any hydrological variables due largely to the effects of upstream subbasins. When the effects of upstreamsubbasins are excluded, it becomes clear that the subbasin size is negatively correlated with percent changes in totalrunoff, storm flow and peak flow. The percent change in impervious land is positively related to the percent changes instorm flow and peak flow, but the relationship itself is dependent on the initial imperviousness level. The geographicalpattern of the basin response implies that it requires more targeted measures to mitigate negative hydrological impacts.
잉크젯 인쇄 기술을 이용하여 상대적으로 낮은 온도에서 리튬이 도핑 된 인듐-아연-산화물 트랜지스터의 제작
최운섭 대한금속·재료학회 2021 대한금속·재료학회지 Vol.59 No.5
Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs). Among potential applications, metal oxide TFTs, which have good properties and moderate processing methods, could be prepared using inkjet printing in the display industry. One effective method of improving their electrical properties is via doping. Lithium doping an oxide TFT is a very delicate process, and difficult to get good results. In this study, lithium was added to indium-zinc oxide (IZO) for inkjet printing to make oxide TFTs. Electrical properties, transfer and output curves, were achieved using inkjet printing even at the relatively low annealing temperature of 200 oC. After optimizing the inkjet process parameters, a 0.01 M Li-doped IZO TFT at 400 oC showed a mobility of 9.08 ± 0.7 cm2/V s, a sub-threshold slope of 0.62 V/dec, a threshold voltage of 2.66 V, and an on-to-off current ratio of 2.83 × 108. Improved bias stability and hysteresis behavior of the inkjet-printed IZO TFT were also achieved by lithium doping.
전기수력학젯 분산 기술을 이용한 아연-주석 산화물 박막트랜지스터의 인듐 도핑 효과
최운섭 대한금속·재료학회 2019 대한금속·재료학회지 Vol.57 No.4
The effect of indium doping on zinc-tin oxide thin-film transistor was investigated using electrohydrodynamic (EHD) jet spray technology. EHD jet spray is a new and unique drop-on-demand patterning technology for printed electronics. After optimizing process parameters, the EHD jet spraying conditions were determined to be a voltage of 4.5 kV, a syringe speed of 0.032 μm/s, spraying time of 10 s, and a substrate temperature of 50 oC. Indium doping increased metal-oxide formation in the thin-film, as confirmed by XPS. In addition, improved TFT electrical properties were obtained compared with non-doped TFTs by using EHD jet spray. A 0.1 M In-doped ZTO TFT showed a mobility of 7.40 cm2/V s, a threshold voltage of -3.4 V, an on-to-off current ratio of 1.87 × 106, and a sub-threshold slope of 1.2 V/dec. Improved hysteresis behavior of the TFT was also achieved by indium doping.