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경사 증착된 비정질 칼코게나이드 박막에 평광-광유기된 이색성의 이완 및 소거 특성
박수호,전진영,이현용,정홍배,Park, Soo-Ho,Chun, Jin-Young,Lee, Hyun-Yong,Chung, Hong-Bay 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.10
The relaxation and elimination characteristics of polarization-photoinduced dichroism have been investigated in amorphous chalcogenide thin films deposited having normal(0。) and obique (80。) vapor incident angles. The dark relaxation kinetics of dichroism from a saturation point(D\ulcorner\ulcorner) to a certain relaxation point(D\ulcorner\ulcorner) grew to be longer on subsequent cycles of switching on and off of the inducing light, and these decays are changed from simple exponential decay to stretched exponential decay. The dichroism induced by a long time(~3.3 hrs) exposure exhibited the characteristics of longer time maintenance and smaller decreasing rate, in contrast with that by a short time (~min) exposure. In addition, the dichroism was eliminated by the exposure of non-polarized He-Ne laser.
김민수,정명호,김관수,박군호,정종완,정홍배,이영희,조원주,Kim, Min-Soo,Jung, Myung-Ho,Kim, Kwan-Su,Park, Goon-Ho,Jung, Jong-Wan,Chung, Hong-Bay,Lee, Young-Hie,Cho, Won-Ju 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.5
The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.