RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      • 좁혀본 항목

      • 좁혀본 항목 보기순서

        • 원문유무
        • 음성지원유무
          • 원문제공처
          • 등재정보
          • 학술지명
          • 주제분류
          • 발행연도
          • 작성언어
          • 저자

        오늘 본 자료

        • 오늘 본 자료가 없습니다.
        더보기
        • 무료
        • 기관 내 무료
        • 유료
        • 비정질 칼코게나이드 반도체의 ON-OFF상태 전이특성

          정홍배 光云大學校 1980 論文集 Vol.9 No.-

          Electronic switching transitions between on-and off-state were investigated to explore the electronic processes responsible for the transition and to obtain informations on threshold switching mechanism. To this and experimental as well as analytical investigations were carried out on the switching behaviour in a transient state arising from a voltage pulse applied to amorphous chalcogenide thin films at room temperature. The results can be explained in terms of a simple theoretical model of the electronic characteristics of switching. The injection of carriers are necessary to initiate the switching action and injected carriers contribute to the current flow as a space-charage limited current(SCLC). The proposed charge controlled switching characteristics can be explained by double injection space-charge overlapping model.

        • KCI등재

          비정질 Ge1Se1Te2 과 Ge2Sb2Te5 칼코게나이드 박막의상변화특성

          정홍배,조원주,구상모 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.10

          Chalcogenide phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional Ge2Sb2Te5 device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition Ge1Se1Te2 material thin film and convetional Ge2Sb2Te5 PRAM thin film. The fabricated new composition Ge1Se1Te2 thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns6.2 V set pulse and a 90 ns8.2 V reset pulse. It is expected that the new composition Ge1Se1Te2 material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional Ge2Sb2Te5 device.

        • 미세패턴 형성을 위한 무기질 a- Se Ge 포토레지스트의 에칭특성

          정홍배 光云大學校 1987 論文集 Vol.16 No.-

          본 논문에서는 각도에 따라 증착된 a-?? 박막과 Ag/a-?? 박막에서의 에칭특성을 고찰하였다. 에칭율은 빛이 조사된 a-?? 박막이 열처리된 박막보다 더욱 크며, 증착각도가 증가함에 따라서 증가한다. positive형인 경우 에칭율은 80°로 증착된 박막에서 최대를 나타낸다. negative형인 경우 Ag가 광도프 되지 않은 a-?? 박막은 알칼리용액(HN₄OH)에 쉽게 용해되지만, Ag가 광도프핀된 박막은 거의 녹지 않음을 알 수 있다. In this paper, the etching characteristics was investigated in obliquely deposited a-?? films was larger than the annealed films, and it was increased with oblique angles. In the case of positive-type, the etching rate was maximum for films deposited at 80°obliqueness. In the case of negative type, the AG photo-undoped a-?? films esaily dissolved at alkaline solution(HN₄OH) but the Ag-photodoped films hardly dissolved at this solution.

        • Te-Se 칼코게나이드박막의 열화에 관한 연구

          정홍배,이영종,김영호,이중기,송준석 한국전기전자재료학회 1988 電氣電子材料學會誌 Vol.1 No.1

          Te-thin films were highly proper material for optical recording media, but has the demerit of short archival life time due to the unstability to humidity. In order to restrain the degradation, Te$_{100-x}$Se$_{x}$ alloys adding Se stable for the humidity were fabricated. Primarily, to measure the degradation rate with varing the composition of Se to x=5, 10, 14, 25 at.% at Te$_{100-x}$ Se$_{x}$, the change of light transmittance was used in various temperature-humidity environments. As the results, it was showed that Se$_{86}$Te$_{14}$ thin was the most proper composition for the improvement of degradation restraint.int.int.

        • KCI등재

          비정질 Ge<sub>1</sub>Se<sub>1</sub>Te<sub>2</sub> 과 Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> 칼코게나이드 박막의 상변화특성

          정홍배,조원주,구상모,Chung Hong-Bay,Cho Won-Ju,Ku Sang-Mo 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.10

          Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.

        • KCI등재

          Ag Nanocrystal이 적용된 Ge<sub>0.5</sub>Se<sub>0.5</sub>-based ReRAM 소자의 Uniformity 특성 향상에 대한 연구

          정홍배,김장한,남기현,Chung, Hong-Bay,Kim, Jang-Han,Nam, Ki-Hyun 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.8

          The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

        • 무기질 a-$Se_{75}Ge_{25}$ 박막을 이용한 네가티브형 포토레지스트의 특성연구

          정홍배,허훈,김태완,Chung, Hong-Bay,Huh, Hoon,Kim, Tae-Wan 한국전기전자재료학회 1988 電氣電子材料學會誌 Vol.1 No.4

          본 연구에서는 미세패턴 형성을 위한 비정질 $Se_{75}Ge_{25}$박막의 네가티브형 포토레지스토에 대하여 고찰하였다. 습식현상공정을 통해 대비도가 포지티브형인 경우 1.4였고 네가티브형인 경우 2.9를 나타내어 네가티브형인 경우가 미세선폭 조절능력이 더 우수함을 알 수 있었다. 표면사진으로부터 약 1.mu.m정도의 미세패턴을 얻었음을 확인할 수 있었다.

        • Fabry-Perot 광필터용 유전체 다층막의 반사도 측정

          정홍배 광운대학교 신기술연구소 1996 신기술연구소논문집 Vol.25 No.-

          본 연구에서는 광섬유 Fabry-Perot 필터에 이용되는 다층막의 미러 코팅 유전체박막의 제작과 특성에 대해 고찰하였다. TiO_2와 SiO_2 박막으로 구성되는 유전체 다층막을 RF 마그네트론 스퍼터(magnetron sputter)로 1550nm의 파장 영역에서 63.8∼99.9%의 반사도를 갖도록 제작하였다. TiO_2 박막의 투과도 측정과 수정된 포락선(modified envelope) 해석에 의해 632.8nm의 파장에서 예측된 굴절율은 2.251이었고 측정값은 2.242로 잘 일치함을 확인하였다. 이러한 결과로부터 1550nm 파장에서 굴절율은 2.170으로 결정되었다. 미러 코팅한 다층막의 반사도는 11층의 경우는 97.6%이고 23층의 경우는 99.9%의 높은 반사도를 얻어 안정된 필터특성을 갖는 최적의 제작설계조건을 나타내었다. In this study, we investigated the fabrication and characteristics of the mirror coated dielectric multilayer film for a Fabry-Perot(FP) filter. The dielectric multilayers consisted of alternating layers of TiO_2 and SiO_2 film which has the reflectance of 63.8∼99.9% at the wavelength of 1550nm were fabricated by RF magnetron sputter system with the fiber thickness monitor system. The refractive index of TiO_2 single film derived from the modified envelope method was the expected value of 2.251 and it was conformed that the expected value of 2.251 were coincided with the measured value of 2.242 at λ=632.8nm. From the refractive index curve, the refractive index of TiO_2 film was expected 2.17 at a wavelength around 1550nm. The reflectance of the mirror coated multilayer having 11 layers and 23 layers were 97.6% and 99.9% at the wavelength of 1.55μm, respectively. As the results, we conclude that the above condition was the optimum fabrication design.

        맨 위로 스크롤 이동