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금속 적층 기반 하이브리드 머시닝센터의 경량화를 위한 형상 최적화에 관한 연구
정원용(Won-Young Jeong),정호인(Ho-In Jeong),이춘만(Choon-Man Lee) 한국기계가공학회 2021 한국기계가공학회지 Vol.20 No.2
In the fourth industrial revolution, the demand for metal three-dimensional (3D) printing technology is rapidly increasing. Metal 3D printing is an efficient method for manufacturing products because the method reduces material waste compared to subtractive manufacturing. In addition, products with complex shapes, such as turbine blades, can be easily produced using metal 3D printing because the method offers a high degree of freedom. However, due to the long production time of metal 3D printing, mass production is impossible, and post-processing is necessary due to its low precision. Therefore, it is necessary to develop a new hybrid process that can efficiently process metals and to develop a metal 3D-printing-based hybrid processing system technology to secure high processing precision and manufacture complex shapes. In this study, the structural stability of a metal 3D printer based hybrid machining center was analyzed through structural analysis before its development. In addition, we proposed a design modification that can reduce the weight and increase the stiffness of the hybrid machining center by performing shape lightning based on the structural analysis results.
합금 조성과 전류조건이 CoFeNi 3원계 합금의 자기특성에 미치는 영향
정원용(Won Young Jeung),김현경(Hyun Kyung Kim),이정오(Jeong Oh Lee) 한국자기학회 2005 韓國磁氣學會誌 Vol.15 No.4
CoFeNi alloys are some of the most studied soft magnetic materials because of their applications as write-head core materials in HDD and MEMS. Ternary CoFeNi films with high saturation magnetic flux density, Bs and low coercivity, Hc were successfully grown by electrodeposition. The optimal composition was Co_(30) Fe_(₃₄) Ni_(36) (at%), and Bs and Hc were 1.9 T and 0.16 A/m, respectively. The XRD and TEM results show that the low Hc of the CoFeNi films was due to very fine crystal particles and mixed fcc and bcc phases.
이정오,이종욱,이관희,정원용,이종엽,Lee, Jeong-Oh,Lee, Jong-Wook,Lee, Kwan-Hyi,Jeung, Won-Young,Lee, Jong-Yup 한국전기화학회 2005 한국전기화학회지 Vol.8 No.3
본 연구에서는 구연산 수용액 전해질을 제조하여 전기도금 방식에 의해 III-V족 화합물 반도체 InSb를 전기화학적으로 합성하였다. 본 연구에서 제조된 InSb는 기존문헌에서 보고된 바와 달리 EPMA분석결과 In과 Sb의 조성비가 52:48로 화학양론을 정확하게 만족시키고 있고, XPS분석결과 전해질내의 구연산의 농도가 1.2M, pH가 4일 때 444.1 eV에서 InSb 화합물의 피크를 관찰하였으며 구연산의 농도가 1.2M보다 낮거나 pH가 4보다 낮을 때는 InSb화합물과 금속상태의 In이 혼재되어 있는 것을 확인하였다. 또한 XRD를 통하여 InSb(111)의 우선결정방위를 갖는다는 것을 확인하였고, I-V 특성 곡선 측정을 통해 rnSb가 고유한 반도체 특성을 보임을 확인하였다. We investigated the electrochemical formation of a stoichiometric III-V compound semiconductor of InSb from an aqueous citric solution. Under an? optimized electrochemical condition, not like other research results, the electrodeposited InSb are satisfied exactly with the stoichiometry. Furthermore it retains the inherent characteristics of III-V compound semiconductor, InSb without heat treatment. EPMA, XPS and XRD were employed for confirmation of its composition/stoichiometry, chemical state, and crystallographic orientation, respectively.
단결정 반금속 비스무스 단일 나노선의 Shubnikov-de Haas 진동
김정민,함진희,심우영,이경일,전계진,정원용,이우영,Kim, Jeong-Min,Ham, Jin-Hee,Shim, Woo-Young,Lee, Kyoung-Il,Jeon, Kye-Jin,Jeung, Won-Young,Lee, Woo Young 한국재료학회 2008 한국재료학회지 Vol.18 No.2
The magneto-transport properties of an individual single crystalline Bi nanowire grown by a spontaneous growth method are reported. A four-terminal device based on an individual 400-nm-diameter nanowire was successfully fabricated using a plasma etching technique that removed an oxide layer that had formed on the surface of the nanowire. Large transverse ordinary magnetoresistance (1401%) and negative longitudinal ordinary magnetoresistance (-38%) were measured at 2 K. It was observed that the period of Shubnikov-de Haas oscillations in transverse geometry was $0.074^{T-1}$, $0.16^{T-1}$ and $0.77^{T-1}$, which is in good agreement with those of bulk Bi. However, it was found that the period of SdH oscillation in longitudinal geometry is $0.24^{T-1}$, which is larger than the value of $0.16^{T-1}$ reported for bulk Bi. The deviation is attributable to the spatial confinement arising from scattering at the nanowire surface boundary.